CDI-DIODE JAN1N6857-1

1N5711
1N5711-1
1N5712-1
1N6857-1
1N6858-1
DSB2810
DSB5712
• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/444
• 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/445
• SCHOTTKY BARRIER DIODES
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C
Storage Temperature:
-65°C to +150°C
Operating Current: 5711 types
2810,5712 & 6858 types
6857 TYPE
Derating:
all types:
:33mA dc@ TL = +130°C, L = 3/8”
:75mA dc@ TL = +110°C, L = 3/8”
:75mA dc@ TL = +70°C, L = 3/8”
Derate to 0 (zero)mA@+150°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI
MINIMUM
MAXIMUM
MAXIMUM
TYPE
BREAKDOWN
FORWARD
FORWARD
NUMBER
VOLTAGE
VOLTAGE
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
MAXIMUM
ESDS
CAPACITANCE @
CLASS
V
R
= 0 VOLTS
f = 1.0 MHZ
VBR @ 10 µ A
VOLTS
V @ 1 mA
F
VOLTS
V @I
F
F
MILLIAMPS
nA
DSB2810
20
0.41
[email protected]
100
15
2.0
1
1N5711,-1
70
0.41
[email protected]
200
50
2.0
1
DSB5712
20
0.41
[email protected]
150
16
2.0
1
1N5712-1
20
0.41
[email protected]
150
16
2.0
1
1N6857-1
20
0.35
[email protected]
150
16
4.5
2
1N6858-1
70
0.36
[email protected]
200
50
4.5
2
NOTE:
I @V
R
R
VOLTS
C
T
PICO FARADS
Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass case
per MIL-PRF-19500/444 and /445
DO-35 Outline
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC): 250
˚C/W maximum at L = .375 inch
NOTICE:
Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.
Contact the factory for qualification completion dates. These two part numbers are
being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They
provide a more robust mechanical design and a higher ESDS class with the only
trade-off being an increase in capacitance.
THERMAL IMPEDANCE: (ZOJX): 40
˚C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION: Any.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: [email protected]
1N5711, 1N5712, 1N6857, 1N6858
DSB5712 and DSB2810
INCLUDING -1 VERSIONS
10,000
IR – REVERSE CURRENT (nA)
IF – FORWARD CURRENT (mA)
100
10
1.0
.1
.01
1000
100
10
1.0
0
.2
.4
.6
.8
1.0
1.2
0
VF – FORWARD VOLTAGE (V)
10
15
20
100,000
10
5
1
.5
.1
.05
.01
10,000
1000
1
10
.2
.4
.6
.8
1.0
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
1N5711.
1.2
100
10
1
1
0
30
1000
RD – DYNAMIC RESISTANCE (!!)
IR – REVERSE CURRENT (nA)
50
25
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
DSB5712 and DSB2810
Typical Variation of Reverse
Current (IR) vs. Reverse Voltage
(VR) at Various Temperatures.
Figure 1.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for the DSB5712 and
DSB2810 Schottky Diodes.
IF – FORWARD CURRENT (mA)
5.0
0
10
20
30
40
50
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
1N5711 Typical
Variation of Reverse Current (IR)
vs. Reverse Voltage (VR) at
Various Temperatures.
60
.1
1.0
10
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
Resistance (RD) vs. Forward
Current (IF).
100