1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 • 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +150°C Storage Temperature: -65°C to +150°C Operating Current: 5711 types 2810,5712 & 6858 types 6857 TYPE Derating: all types: :33mA dc@ TL = +130°C, L = 3/8” :75mA dc@ TL = +110°C, L = 3/8” :75mA dc@ TL = +70°C, L = 3/8” Derate to 0 (zero)mA@+150°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. CDI MINIMUM MAXIMUM MAXIMUM TYPE BREAKDOWN FORWARD FORWARD NUMBER VOLTAGE VOLTAGE VOLTAGE MAXIMUM REVERSE LEAKAGE CURRENT MAXIMUM ESDS CAPACITANCE @ CLASS V R = 0 VOLTS f = 1.0 MHZ VBR @ 10 µ A VOLTS V @ 1 mA F VOLTS V @I F F MILLIAMPS nA DSB2810 20 0.41 1.0@35 100 15 2.0 1 1N5711,-1 70 0.41 1.0@15 200 50 2.0 1 DSB5712 20 0.41 1.0@35 150 16 2.0 1 1N5712-1 20 0.41 1.0@35 150 16 2.0 1 1N6857-1 20 0.35 0.75@35 150 16 4.5 2 1N6858-1 70 0.36 0.65@15 200 50 4.5 2 NOTE: I @V R R VOLTS C T PICO FARADS Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case per MIL-PRF-19500/444 and /445 DO-35 Outline LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 ˚C/W maximum at L = .375 inch NOTICE: Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway. Contact the factory for qualification completion dates. These two part numbers are being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They provide a more robust mechanical design and a higher ESDS class with the only trade-off being an increase in capacitance. THERMAL IMPEDANCE: (ZOJX): 40 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITION: Any. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] 1N5711, 1N5712, 1N6857, 1N6858 DSB5712 and DSB2810 INCLUDING -1 VERSIONS 10,000 IR – REVERSE CURRENT (nA) IF – FORWARD CURRENT (mA) 100 10 1.0 .1 .01 1000 100 10 1.0 0 .2 .4 .6 .8 1.0 1.2 0 VF – FORWARD VOLTAGE (V) 10 15 20 100,000 10 5 1 .5 .1 .05 .01 10,000 1000 1 10 .2 .4 .6 .8 1.0 VF – FORWARD VOLTAGE (V) Figure 3. I-V Curve Showing Typical Forward Voltage Variation with Temperature for Schottky Diode 1N5711. 1.2 100 10 1 1 0 30 1000 RD – DYNAMIC RESISTANCE (!!) IR – REVERSE CURRENT (nA) 50 25 VR – REVERSE VOLTAGE (V) (PULSED) Figure 2. DSB5712 and DSB2810 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. Figure 1. I-V Curve Showing Typical Forward Voltage Variation with Temperature for the DSB5712 and DSB2810 Schottky Diodes. IF – FORWARD CURRENT (mA) 5.0 0 10 20 30 40 50 VR – REVERSE VOLTAGE (V) (PULSED) Figure 4. 1N5711 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures. 60 .1 1.0 10 IF – FORWARD CURRENT (mA) (PULSED) Figure 5. Typical Dynamic Resistance (RD) vs. Forward Current (IF). 100