CDIL 2N4402

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-92 Plastic Package
2N4400, 2N4401
2N4402, 2N4403
2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
General Purpose Switching Applications
C
EB
DIM
A
B
C
D
E
F
G
H
K
L
MIN
4,32
4,45
3,18
0,41
0,35
5 DEG
1,14
1,14
12,70
1.982
MAX
5,33
5,20
4,19
0,55
0,50
1,40
1,53
–
2.082
ALL DIMENSIONS IN M.M.
1 2 3
1 = EMITTER
2 = BASE
3 = COLLECTOR
ABSOLUTE MAXIMM RATINGS
Rating
Symbol
2N4400/01
2N4402/03
Collector-Emitter Voltage
VCEO
40
40
V
Collector-Base Voltage
VCBO
60
40
V
Emitter-Base Voltage
V EBO
6
5
V
Collector Current Continuous
IC
-
600
-
mA
Power Dissipation At Ta=25 ºC
PD
Derate Above 25 ºC
Power Dissipation At Tc=25 ºC
PD
Derate Above 25 ºC
Operating & Storage
Units
-
625
-
mW
-
5.0
-
mW/ºC
-
1.5
-
W
12
-
mW/ºC
T j ,Tstg
-55 to +150
ºC
Junction Temperature Range
THERMAL RESISTANCE
-
ºC/W
Junction to Ambient
Rth (j-a)
200
ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified)
ºC/W
Junction to Case
Continental Device India Limited
Rth (j-c)
Data Sheet
-
83.3
Page 1 of 6
2N4400, 2N4401
2N4402, 2N4403
Characteristic
Collector Emitter Voltage
IC=1mA, IB =0
Collector Base Voltage
IC=100µA, IE =0
Emitter Base Voltage
IE=100µA, I C=0
Base Cutoff Current
VCE =35V, VBE=0.4V
Collector Cutoff Current
VCE =35V, VBE=0.4V
Collector-Emitter
Saturation Voltage
IC=150mA, I B =15mA
IC=500mA, I B =50mA
Base-Emitter
Saturation Voltage
IC=150mA, I B =15mA
IC=500mA,I B =50mA
Characteristic
D C Current Gain
IC=0.1mA,VCE=1V
IC=1mA,V CE=1V
IC=10mA,V CE=1V
IC=150mA,V CE=1V*
IC=150mA,V CE=2V*
IC=500mA,V CE=2V*
2N4400/01
2N4402/03
BVCEO*
>40
>40
V
BVCBO
>60
>40
V
BVEBO
>6
>5
V
IBEV
<0.1
<0.1
µA
ICEX
<0.1
<0.1
µA
VCE (sat)*
<0.4
<0.75
<0.4
<0.75
V
V
0.75 to 0.95
<1.2
0.75 to 0.95
<1.3
V
V
2N4400 2N4401 2N4402 2N4403
Unit
VBE
Symbol
hFE
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
IC=1mA, VCE=10V, f=1KHz hfe
Input Impedance
IC=1mA, VCE=10V, f=1KHz hie
Continental Device India Limited
Symbol
(sat)*
>20
>20
>40
>40
>80
50-150 100-300
>20
>40
>30
>30
>60
>50
>100
50-150 100-300
>20
>20
20-250
40-500
30-250
60-500
0.5-7.5
1.0-15
0.75-7.5
1.5-15
Data Sheet
Unit
KΩ
Page 2 of 6
2N4400, 2N4401
2N4402, 2N4403
Characteristic
Symbol
2N4400 2N4401 2N4402 2N4403
Voltage Feedback Ratio
hre ALL
IC=1mA, VCE=10V, f=1KHz
Output Admittance
IC=1mA, VCE=10V, f=1KHz hoe
x10–4
0.1-8.0
1.0-30
1.0-30
Unit
1.0-100 1.0-100
µ
Collector-Base Capacitance
VCB=5V, IE=0, f=100KHz
VCB=10V, IE =0, f=140KHz
C cb
<6.5
-
<6.5
-
<8.5
<8.5
pF
pF
Emitter-Base Capacitance
VEB=0.5V, IC=0, f=100KHz
VEB=0.5V, IC=0, f=140KHz
C eb
<30
-
<30
-
<30
<30
pF
pF
Transition Frequency
IC=20mA, VCE=10V
f=100MHz
fT
>200
>250
>150
>200
MHz
SWITCHING CHARACTERISTICS
VCC=30V, VEB=2V,
IC=150mA, IB1 =15mA
Delay time
Rise time
td ALL
tr ALL
<15
<20
ns
ns
VCC=30V, IC=150mA,
IB1 =IB2 =15mA
Storage time
Fall time
ts ALL
tf ALL
<225
<30
ns
ns
*Pluse Test : Pluse width ≤ 300µs, duty ≤ 2.0%.
Continental Device India Limited
Data Sheet
Page 3 of 6
2N4400, 2N4401
2N4402, 2N4403
hFE, DC Current Gain (Normalized)
DC Current Gain
VCE=1.0V
VCE=10V
TJ=125°C
25°C
–55°C
IC Collector Current (mA)
VCE, Collector-Emitter Voltage (V)
DC Current Gain
TJ=25°C
I C=1.0mA
10mA
100mA
500mA
IB Base Current (mA)
On Voltages
TJ=25°C
Voltage (V)
VBE(sat)@IC /IB=10
VBE@VCE=1.0V
VCE(sat)@IC/IB =10
IC Collector Current (mA)
Continental Device India Limited
Data Sheet
Page 4 of 6
2N4400, 2N4401
2N4402, 2N4403
hFE, DC Current Gain (Normalized)
DC Current Gain
VCE=1.0V
VCE=10V
TJ=125°C
25°C
–55°C
IC Collector Current (mA)
VCE Collector-Emitter Voltage (V)
Collector Saturation Region
I C =1mA
10mA
100mA
500mA
IB Base Current (mA)
On Voltages
TJ=25°C
VBE(sat)@IC /IB=10
Voltage (V)
VBE@VCE=1.0V
VCE(sat)@IC/I B=10
IC Collector Current (mA)
Continental Device India Limited
Data Sheet
Page 5 of 6
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
[email protected]
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 6 of 6