CDIL CMBTA42

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
CMBTA42
CMBTA43
SILICON EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
CMBTA42 = 1D
CMBTA43 = 1E
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to Tamb = 25 °C
Junction temperature
D.C. current gain
IC = 10 mA; VCE = 10 V
Transition frequency at f = 35 MHz
IC = 10 mA; VCE = 20 V
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 20 V
Continental Device India Limited
Data Sheet
VCBO
VCEO
VEBO
IC
Ptot
Tj
CMBT A42
max. 300
max. 300
max.
max.
max.
max.
6
500
250
150
hFE
min.
40
fT
min.
50
Cre
max.
3
A43
200 V
200 V
V
mA
mW
°C
MHz
4
pF
Page 1 of 3
CMBTA42
CMBTA43
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
VCBO
Collector–emitter voltage (open base)
VCEO
Emitter–base voltage (open collector)
VEBO
Collector current (d.c.)
IC
Total power dissipation up to Tamb = 25 °C Ptot
Storage temperature
Tstg
Junction temperature
Tj
max. 300
max. 300
max.
max.
max.
–55
max.
200 V
200 V
6
V
500
mA
250
mW
to +150
°C
150
°C
THERMAL CHARACTERISTICS
Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb
Thermal resistance
from junction to ambient
=
500
Rth j–a
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
CMBTA42
V(BR)CEO min. 300
IC = 1 mA; IB = 0
Collector–base breakdown voltage
V(BR)CBO min. 300
IC = 100 µA; IE = 0
Emitter–base breakdown voltage
V(BR)EBO min.
IE = 100 µA; IC = 0
Collector cut–off current
ICBO
max. 0.1
IE = 0; VCB = 200 V
ICBO
max. –
IE = 0; VCB = 160 V
Emitter cut–off current
IEBO
max. 0.1
IC = 0; VBE = 6 V
IEBO
max. –
IC = 0; VBE = 4 V
Feedback capacitance at f = 1 MHz
Cre
max. 3
IE = 0; VCB = 20 V
Saturation voltages
VCEsat
max.
IC = 20 mA; IB = 2 mA
VBEsat
max.
IC = 20 mA; IB = 2 mA
D.C. current gain
hFE
min.
IC = 1 mA; VCE = 10 V
hFE
min.
IC = 10 mA; VCE = 10 V
hFE
min.
IC = 30 mA; VCE = 10 V
Transition frequency at f = 35 MHz
fT
min.
IC = 10 mA; VCE = 20 V
Continental Device India Limited
Data Sheet
K/W
A43
200 V
200 V
6
V
– µA
0.1 µA
– µA
0.1 µA
4
0.5
0.9
pF
V
V
25
40
40
50
MHz
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
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