NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS (Units in mm) • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS Source • HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz 0.4 – 0.15 0.2 – 0.1 1.2 MAX 3.6 – 0.2 0.9 – 0.2 DESCRIPTION 1.0 MAX 0.8 MAX 5.7 MAX • LOW THERMAL RESISTANCE: 5°C/W Drain Gate 4.4 MAX X 9 Drain 0.8 – 0.15 I 5.7 MAX 0.6 – 0.15 • HIGH OUTPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc T Source Gate BOTTOM VIEW Note: Unless otherwise specified, tolerance is ±0.2 mm NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. ELECTRICAL CHARACTERISTICS (TC = 25°C) PART NUMBER NE6510179A Functional Characteristics PACKAGE OUTLINE SYMBOLS POUT Output Power 79A UNITS MIN TYP dBm 31.5 32.5 Linear Gain1 dB Power Added Efficiency % Drain Current A 0.72 Saturated Drain Current A 2.4 VP Pinch-Off Voltage V RTH Thermal Resistance GL ηADD ID IDSS Electrical DC Characteristics CHARACTERISTICS BVGD Gate to Drain Breakdown Voltage 50 58 -2.0 5 12 TEST CONDITIONS f = 1900 MHz, VDS = 3.5 V, Pin = +25 dBm, Rg = 100 Ω IDSQ = 200 mA (RF OFF)2 10.0 °C/W V MAX VDS = 2.5 V; VGS = 0 V -0.4 VDS = 2.5 V; ID = 14 mA 8 Channel to Case IGD = 14 mA Notes: 1. Pin = 0 dBm 2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples. California Eastern Laboratories NE6510179A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC SYMBOLS CHARACTERISTICS UNITS MIN TYP POUT Output Power dBm 35.0 GL Linear Gain1 dB 10.0 Power Added Efficiency % 56 ID Drain Current A 1.2 POUT Output Power dBm 31.5 GL Linear Gain1 dB 15.0 Power Added Efficiency % 70 Drain Current A 0.53 = 25°C) MAX TEST CONDITIONS f = 1900 MHz, VDS = 5.0 V, Pin = +25 dBm, Rg = 100 Ω ηADD IDSQ = 200 mA (RF OFF) f = 900 MHz, VDS = 3.5 V, ηADD ID Pin = +20 dBm, Rg = 100 Ω IDSQ = 200 mA (RF OFF) Notes: 1. Pin = 0 dBm ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C) RECOMMENDED OPERATING LIMITS SYMBOLS UNITS RATINGS SYMBOLS VDS Drain to Source Voltage PARAMETERS V 8 VDS Drain to Source Voltage VGS Gate to Source Voltage V -4 TCH Channel Temperature °C +125 IDS Drain Current A 2.8 GCOMP Gain Compression1 dB 3.0 IGS Gate Current (IGF, IGR) mA ±25 PT Total Power Dissipation2 W 15 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. PARAMETERS Total Power Dissipation, PD (W) 20 15 RTH = 8°C/W 10 5 0 25°C 50 100 Case Temperature, TC (°C) 150 TYP V 3.5 MAX 6.0 Note: 1. Recommended maximum gain compression is 3.0 dB at VDS > 4.2 V. ORDERING INFORMATION PART NUMBER NE6510179A-T1-A NE6510179A-A TOTAL POWER DISSIPATION vs. CASE TEMPERATURE UNITS QTY 1 K/Reel Bulk, 100 piece min. NE6510179A TYPICAL PERFORMANCE CURVES (TA = 25°C) Drain Current, ID (A) 2.5 VGS = 0V 2.0 -0.2 V 1.5 -0.4 V 1.0 -0.6 V 0.5 Transconductance, GM (mS) 3 2.50 1.00 2.00 0.8 1.50 0.6 1.00 0.4 0.50 0.2 -0.8 V 0 0 -1.0 -1.0 V 0 1 2 3 4 5 6 -.60 -.40 -.20 Drain Voltage, VD (V) Gate Voltage, GV (V) ARRHENIUS PLOTS vs. JUNCTION TEMPERATURE MAXIMUM AVAILABLE GAIN vs. FREQUENCY 0.00 30 Maximum Available Gain, GMAG (dB) 1.0E+07 Arrhenius Plots, MTTF (hours) -.80 1.0E+06 1.35E+06 Hrs (TCH = 110°C) EA = 1.0EV 1.0E+05 1.0E+04 1805 Hrs (TCH = 217°C) 25 20 15 2.2 V, 200 mA 10 4.6 V, 300 mA 3.5 V, 150 mA 5 1.0E+03 1.6 1.8 2 2.2 2.4 2.6 2.8 3 Junction Temperature, T/TCH (1/K/1000) 0.1 4.0 Frequency, GHz 0 Drain Current, ID (A) TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE DRAIN CURRENT vs. DRAIN VOLTAGE NE6510179A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 90° 120° j100 j25 60° 150° 30° j10 10 0 25 50 100 180° 0 0° -j10 Coordinates in Ohms Frequency in GHz VD = 3.5 V, ID = 150 mA -j100 -j25 -150° -30° -120° -60° -j50 -90° NE6510179A VD = 3.5 V, ID = 150 mA FREQUENCY GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 S11 MAG 0.956 0.955 0.956 0.955 0.955 0.955 0.955 0.954 0.954 0.953 0.953 0.953 0.953 0.952 0.951 0.951 0.952 0.951 0.951 0.950 0.950 0.950 0.950 0.950 0.949 0.949 0.949 0.949 0.950 0.949 0.949 0.949 0.949 0.949 0.951 0.950 S21 ANG 179.67 177.71 175.93 174.33 172.86 171.45 170.09 168.81 167.51 166.27 165.06 163.84 162.63 161.41 160.23 159.05 157.87 156.61 155.50 154.36 153.22 152.11 150.95 149.81 148.69 147.51 146.33 145.20 144.05 142.93 141.85 140.70 139.60 138.47 137.45 136.38 MAG 2.813 2.343 2.016 1.765 1.573 1.418 1.289 1.187 1.097 1.021 0.955 0.898 0.847 0.802 0.761 0.726 0.693 0.662 0.635 0.611 0.587 0.565 0.545 0.528 0.510 0.494 0.478 0.465 0.452 0.439 0.427 0.416 0.405 0.394 0.384 0.374 S12 ANG 82.32 79.83 77.44 75.21 73.00 70.78 68.54 66.57 64.47 62.40 60.35 58.36 56.38 54.34 52.35 50.45 48.50 46.53 44.55 42.67 40.91 39.04 37.19 35.36 33.69 31.91 30.21 28.41 26.80 25.05 23.40 21.75 20.23 18.70 17.31 15.99 MAG 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.021 0.020 0.021 0.021 0.021 0.021 0.022 0.022 0.022 0.023 0.023 0.023 0.023 S22 ANG 5.20 5.02 5.41 5.58 5.93 6.32 6.08 6.55 6.48 6.73 6.94 6.98 7.33 7.16 7.48 8.27 8.79 8.70 8.69 8.71 8.92 8.87 9.41 9.87 10.32 10.98 11.59 12.25 13.46 13.17 13.36 13.56 13.89 13.96 14.08 14.68 MAG 0.842 0.842 0.843 0.843 0.842 0.842 0.841 0.843 0.842 0.842 0.843 0.843 0.843 0.842 0.844 0.844 0.845 0.844 0.845 0.846 0.847 0.847 0.848 0.850 0.852 0.852 0.854 0.855 0.857 0.858 0.860 0.862 0.864 0.865 0.869 0.875 ANG 176.48 175.21 173.93 172.76 171.63 170.47 169.22 168.26 167.19 166.12 165.06 164.05 163.06 161.99 160.95 159.99 159.02 158.03 157.05 156.09 155.25 154.33 153.36 152.46 151.70 150.82 149.99 149.11 148.32 147.55 146.79 146.14 145.53 145.01 144.58 144.34 K MAG1 0.29 0.34 0.40 0.46 0.51 0.57 0.62 0.67 0.72 0.78 0.82 0.88 0.92 0.98 1.05 1.10 1.13 1.20 1.23 1.27 1.31 1.37 1.41 1.44 1.50 1.52 1.59 1.58 1.61 1.62 1.64 1.64 1.64 1.65 1.59 1.59 (dB) 21.87 21.09 20.38 19.81 19.24 18.79 18.33 17.95 17.59 17.26 16.92 16.65 16.36 16.12 14.59 13.76 13.19 12.48 12.10 11.66 11.27 10.81 10.49 10.17 9.81 9.50 9.17 8.94 8.71 8.41 8.21 8.00 7.85 7.64 7.67 7.50 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE6510179A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 -20 j100 j25 -22.5 -26 j10 -32 10 0 25 50 100 0 8 -j10 -j100 -j25 14 Coordinates in Ohms Frequency in GHz VD = 5.0 V, ID = 300 mA 17.5 20 -j50 NE6510179A VD = 5.0 V, ID = 300 mA FREQUENCY GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 S11 MAG 0.964 0.963 0.964 0.963 0.963 0.962 0.962 0.962 0.962 0.961 0.961 0.960 0.960 0.960 0.959 0.959 0.959 0.958 0.958 0.957 0.957 0.957 0.957 0.957 0.956 0.956 0.956 0.956 0.957 0.955 0.955 0.955 0.955 0.956 0.957 0.956 S21 ANG 179.30 177.40 175.60 174.00 172.60 171.20 169.80 168.50 167.20 166.00 164.80 163.60 162.40 161.10 159.90 158.80 157.60 156.30 155.20 154.00 152.90 151.80 150.60 149.50 148.30 147.20 146.00 144.80 143.70 142.50 141.50 140.30 139.20 138.00 137.00 135.90 MAG 3.090 2.574 2.215 1.940 1.730 1.559 1.418 1.306 1.207 1.124 1.053 0.990 0.934 0.885 0.841 0.803 0.766 0.733 0.704 0.677 0.652 0.627 0.606 0.587 0.568 0.550 0.534 0.519 0.505 0.491 0.478 0.467 0.455 0.443 0.431 0.421 S12 ANG 82.99 80.69 78.48 76.44 74.41 72.36 70.30 68.47 66.55 64.61 62.72 60.89 59.08 57.16 55.31 53.56 51.76 49.92 48.04 46.31 44.72 42.98 41.20 39.47 37.95 36.32 34.72 32.99 31.47 29.85 28.29 26.73 25.35 23.91 22.54 21.29 MAG 0.013 0.013 0.013 0.013 0.014 0.014 0.014 0.014 0.015 0.015 0.015 0.015 0.016 0.016 0.016 0.016 0.017 0.017 0.017 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.020 0.020 0.021 0.021 0.022 0.022 0.023 0.023 0.024 0.024 S22 ANG 11.07 12.04 13.41 14.52 15.48 16.81 17.13 18.35 18.76 19.61 20.22 20.71 21.61 21.54 22.43 23.77 24.20 24.45 24.16 24.58 24.86 24.96 25.58 25.67 26.27 27.34 28.08 28.08 29.01 28.15 28.47 28.09 28.10 27.80 27.69 27.86 MAG 0.863 0.862 0.863 0.863 0.862 0.862 0.861 0.862 0.861 0.861 0.861 0.862 0.861 0.860 0.861 0.861 0.861 0.859 0.860 0.862 0.863 0.861 0.862 0.864 0.865 0.865 0.868 0.868 0.869 0.869 0.870 0.873 0.873 0.874 0.877 0.883 ANG 175.80 174.60 173.30 172.10 171.00 169.90 164.30 167.60 166.50 165.40 164.30 163.30 162.30 161.20 160.10 159.10 158.20 157.20 156.10 155.10 154.30 153.40 152.40 151.40 150.70 149.80 149.00 148.00 147.20 146.50 145.70 145.00 144.40 143.90 143.50 143.20 K MAG1 0.38 0.45 0.52 0.59 0.63 0.71 0.77 0.83 0.85 0.92 0.97 1.03 1.05 1.10 1.16 1.22 1.22 1.29 1.32 1.33 1.36 1.42 1.46 1.43 1.49 1.54 1.52 1.54 1.51 1.57 1.55 1.55 1.54 1.54 1.48 1.49 (dB) 23.76 22.97 22.31 21.74 20.92 20.47 20.06 19.70 19.06 18.75 18.46 17.10 16.30 15.55 14.76 14.17 13.71 13.09 12.76 12.33 11.99 11.58 11.27 11.01 10.63 10.30 10.01 9.81 9.61 9.24 8.99 8.89 8.64 8.53 8.44 8.32 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE6510179A APPLICATION CIRCUIT (1.93-1.99 GHz) VG VD GND J4 J3 C2 C8 C10 C3 C9 C11 P1 GND C12 C13 J1 R1 C5 T I J2 RFOUT C1 8 X RFIN C4 C6 U1 NE65XXX79A-EV 100637 Contact CEL Engineering for artwork and more detailed information. .034 J4 J3 VD VG C13 C11 J1 RF Input C9 C3 L = .890 W = .010 C2 C8 C10 R1 NE6510179A C5 TF-100637 4 C2, C3 C12 J2 RF Output C4 L = .280 W = .050 1 L = .874 W = .010 L = .260 W = .050 C1 TEST CIRCUIT BLK 17 2-56 X 3/16 PHILLIPS PAN HEAD 16 CASE 1 100 pF CAP MURATA 15 2 MA101J 1 MCR03J200 R1 0603 20 OHM RESISTOR ROHM 14 1 100A6RBCP150X C14 NOT USED CASE A 6.8 pF CAP ATC 13 1 100A4R3CP150X C4 CASE A 4.3 pF CAP ATC 12 2 100A240CP150X C5. C1 CASE A 24 pF CAP ATC 11 1 100A4R7CP150X C6 CASE A 4.7 pF CAP ATC 10 1 100A1RBCP150X C7 NOT USED CASE A 1.8 pF CAP ATC 9 2 TAJB475K010R C12, C13 CASE B 4.7 µF CAP AVX 8 2 GRM40X7R104K025BL C10, C11 0805 .1 µF CAP MURATA 7 2 GRM40C0G102J050BD C8, C9 0805 1000 pF CAP MURATA 6 1 NE6510179A U1 IC NEC 5 1 703401 P1 GROUND LUG CONCORD 4 1 1250-003 J3, J4 FEEDTHRU MURATA 3 2 2052-5636-02 J1, J2 FLANGE MOUNT JACK RECEPTACLE 2 NE6510179A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 5 V PAE & GAIN vs. OUTPUT POWER PAE & GAIN vs. OUTPUT POWER 14 60 14 12 50 12 50 FC = 1.96 GHz, VDS = 5 V 45 40 30 6 20 Gain, IDSQ = 200 mA Gain, IDSQ = 600 mA PAE, IDSQ = 200 mA PAE, IDSQ = 600 mA 2 FC = 1.96 GHz, VDS = 3 V 20 15 22 24 26 0 0 28 30 32 20 34 24 26 28 30 32 34 Output Power, POUT (dBm) GAIN & SATURATED POWER vs. FREQUENCY GAIN & SATURATED POWER vs. FREQUENCY 33 14 32 12 31 10 30 Gain, IDSQ = 100 mA Gain, IDSQ = 800 mA POUT, IDSQ = 100 mA POUT, IDSQ = 800 mA POUT = 16 dB for Gain 29 dB for PSAT VDS = 3 V 1.92 1.94 1.96 1.98 2.00 10 5 0 36 16 36 14 35 12 34 33 10 POUT = 16 dB for Gain 29 dB for PSAT VDS = 5 V 8 1.91 29 2.02 1.92 1.94 Gain, IDSQ = 100 mA Gain, IDSQ = 800 mA POUT, IDSQ = 100 mA POUT, IDSQ = 800 mA 1.96 1.98 2.00 32 2.02 Frequency, f (GHz) THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER FC = 1.96 GHz, POUT = Each Tone VDS = 3 V 20 25 30 35 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA 40 45 21 22 23 24 25 26 27 28 29 Total Output Power, POUT (dBm) 30 Third Order Intermodulation Distortion, IM3 (dBc) Frequency, f (GHz) 15 20 22 Output Power, POUT (dBm) 16 8 1.90 Gain, IDSQ = 200 mA Gain, IDSQ = 600 mA PAE, IDSQ = 200 mA PAE, IDSQ = 600 mA 2 Gain, GA (dB) 20 10 Saturated Power, PSAT (dBm) 0 Gain, GA (dB) 25 6 4 4 Third Order Intermodulation Distortion, IM3 (dBc) 30 8 PAE (%) 8 35 15 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA 20 25 30 35 40 FC = 1.96 GHz, POUT = Each Tone VDS = 5 V 45 20 21 22 23 24 25 26 27 28 29 Total Output Power, POUT (dBm) 30 Saturated Power, PSAT (dBm) 40 Gain, GA (dB) 10 PAE (%) Gain, GA (dB) 10 NE6510179A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 5 V ACPR vs. OUTPUT POWER ACPR vs. OUTPUT POWER 35 ACPR1 885 KHz Third Order Intermodulation Distortion, IM3 (dBc) Third Order Intermodulation Distortion, IM3 (dBc) 35 40 45 ACPR2 1.25 MHz 50 100 mA 200 mA 400 mA 600 mA 800 mA 55 60 FC = 1.96 GHz, VDS = 3 V, 64 CH IS95 CDMA 65 23 24 25 26 27 28 29 30 Output Power, POUT (dBm) 31 32 33 FC = 1.96 GHz, VDS = 5 V ACPR1 64 CH IS95 CDMA 885 KHz 40 45 ACPR2 1.25 MHz 50 55 IDSQ = 100 mA IDSQ = 200 mA IDSQ = 400 mA IDSQ = 600 mA IDSQ = 800 mA 60 65 23 25 27 29 31 Output Power, POUT (dBm) 33 35 NE6510179A NONLINEAR MODEL SCHEMATIC Q1 0.2 ohms LGX LG 0.001 nH 0.75 nH GATE CGS PKG 0.1 pF LD RDX 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms CBSX 100 pF CDS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters UNITS Q1 Parameter Units VTO -0.756 RG 0.05 capacitance VTOSC 0 RD 0.001 inductance nanohenries ALPHA 2 RS 0.001 resistance ohms BETA 2.245 RGMET 0 GAMMA 0 KF 0 GAMMADC(2) 0.01 AF 1 27 Q 1.7 TNOM DELTA 0 XTI 3 VBI 0.6 EG 1.43 IS 1e-16 VTOTC 0 N 1 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 10e-12 CDS 0.5e-12 RDB 0.001 CBS 0 CGSO(3) 20e-12 CGDO(4) 4e-12 DELTA1 0.3 DELTA2 0.2 FC 0.5 VBR Infinity picofarads MODEL RANGE Frequency: 0.5 to 4 GHz Bias: VDS = 2.2 V to 5 V, ID = 150 mA to 300 mA Date: 3/29/2000 (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 11/04/2002 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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