NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz • MAXIMUM STABLE GAIN: MSG = 23 dB TYP @ VCE = 3.6 V, IC = 100 mA, f = 460 MHz • SiGe TECHNOLOGY: UHS2-HV process • ABSOLUTE MAXIMUM RATINGS: VCBO = 20 V • 3-PIN POWER MINIMOLD (34 PACKAGE) ORDERING INFORMATION PART NUMBER ORDER NUMBER NESG250134-AZ NESG250134-AZ NESG250134-T1-AZ NESG250134-T1-AZ PACKAGE QUANTITY 3-pin power minimold (Pb-Free) Note1 25 pcs (Non reel) • 12 mm wide embossed taping SUPPLYING FORM 1 kpcs/reel • Pin 2 (Emitter) face the perforation side of the tape Note 1. Contains lead in the part except the electrode terminals. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V IC 500 mA Ptot Note 1.5 W Collector Current Total Power Dissipation Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NESG250134 THERMAL RESISTANCE (TA = 25°C) PARAMETER Thermal Resistance from Junction to Ambient Note SYMBOL RATINGS UNIT Rthj-a 80 °C/W Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT VCE − 3.6 4.5 V Collector Current IC − 400 500 mA Input Power Pin − 12 17 dBm Collector to Emitter Voltage Note Note Input power under conditions of VCE ≤ 4.5 V, f = 460 MHz NESG250134 ELECTRICAL CHARACHTERISTICS (TA = 25°C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 1 μA Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA − − 1 hFE Note 1 VCE = 3 V, IC = 100 mA 80 120 180 μA − DC Current Gain RF Characteristics Gain Bandwidth Product fT VCE = 3.6 V, IC = 100 mA, f = 460 MHz − 10 − GHz 2 VCE = 3.6 V, IC = 100 mA, f = 460 MHz − 19 − dB Note 2 VCE = 3.6 V, IC = 100 mA, f = 460 MHz − 23 − dB 16 19 − dB |S21e| Insertion Power Gain Maximum Stable Gain MSG Linear gain (1) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 0 dBm Linear gain (2) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm − 16 − dB Output Power (1) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm 27 29 − dBm Output Power (2) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm − 29 − dBm Collector Efficiency (1) ηc VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm − 60 − % Collector Efficiency (2) ηc VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm − 60 − % Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. MSG = S21 S12 hFE CLASSIFICATION RANK FB Marking SN hFE Value 80 to 180 NESG250134 TYPICAL CHARACHTERISTICS (TA = +25°C, unless otherwise specified ) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass epoxy PWB (34.2 cm2 × 0.8 mm (t) ) 1.6 1.5 1.2 0.8 Nature Neglect 0.4 25 0 1,000 50 75 100 125 150 1.0 0.8 0.6 0.4 0.2 2 4 6 8 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1,000 10 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) 500 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 3 mA 200 2 mA 100 IB = 1 mA 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 10 VCE = 4 V 100 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) 1.2 Collector to Base Voltage VCB (V) 100 0 f = 1 MHz 1.4 Ambient Temperature TA (ºC) VCE = 3 V 0.0001 0.4 1.6 0 Collector Current IC (mA) Collector Current IC (mA) Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 2.0 1.0 NESG250134 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 10 10 Gain Bandwidth Product fT (GHz) 20 16 1,000 DC Current Gain hFE VCE = 3 V 100 VCE = 4 V 100 10 10 1,000 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 VCE = 3 V f = 460 MHz 8 4 0 10 100 16 VCE = 3.6 V f = 460 MHz 12 8 4 0 10 1,000 Collector Current IC (mA) 8 4 1,000 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 12 100 1,000 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 4 V f = 460 MHz 0 10 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 16 1,000 Collector Current IC (mA) 12 20 100 Collector Current IC (mA) Gain Bandwidth Product fT (GHz) DC Current Gain hFE 1,000 DC CURRENT GAIN vs. COLLECTOR CURRENT 40 VCE = 3 V IC = 100 mA 35 30 MSG MAG 25 20 15 10 5 |S21e|2 0 0.1 1 Frequency f (GHz) 10 NESG250134 VCE = 3.6 V IC = 100 mA 35 30 MSG MAG 25 20 15 10 5 0 0.1 |S21e|2 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 VCE = 4 V IC = 100 mA 35 30 MSG MAG 25 20 15 10 5 |S21e|2 0 0.1 1 10 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 460 MHz MSG MAG 20 |S21e|2 15 10 5 0 10 100 1,000 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Frequency f (GHz) 25 20 MSG 15 VCE = 3 V f = 900 MHz MAG 10 |S21e|2 5 0 -5 10 100 1,000 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3.6 V f = 460 MHz MSG MAG 20 15 |S21e|2 10 5 0 10 100 1,000 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 25 20 MSG 15 10 VCE = 3.6 V f = 900 MHz MAG |S21e|2 5 0 -5 10 100 Collector Current IC (mA) 1,000 NESG250134 25 MSG VCE = 4 V f = 460 MHz MAG 20 |S21e|2 15 10 5 0 10 100 1,000 25 20 MSG VCE = 4 V f = 900 MHz MAG 15 |S21e|2 10 5 0 -5 10 100 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 600 VCE = 3.6 V, f = 460 MHz IC (set) = 30 mA 500 GP 20 400 15 300 Pout 10 200 IC 5 100 ηC 0 -10 -5 0 5 10 0 20 15 Input Power Pin (dBm) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 Ga 4 20 3 15 2 10 NF 1 0 10 VCE = 3.6 V f = 460 MHz 100 5 0 1,000 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Associated Gain Ga (dB) Noise Figure NF (dB) 5 Output Power Pout (dBm), Power Gain GP (dB) Collector Current IC (mA) Collector Current IC (mA), Collector Efficiency η C (%) Output Power Pout (dBm), Power Gain GP (dB) Collector Current IC (mA) 1,000 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 600 VCE = 3.6 V, f = 900 MHz IC (set) = 30 mA 20 15 500 Pout 400 GP 300 10 200 IC 5 0 -10 100 ηC -5 0 5 10 Input Power Pin (dBm) 15 0 20 Collector Current IC (mA), Collector Efficiency η C (%) 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT NESG250134 PA EVALUATION BOARD (f = 460 MHz) GND Vb VC GND R1 C10 C9 C8 C1 SN SN RF IN RF OUT C2 C7 C3 C4 L1 C6 C5 L2 Notes 1. 38 × 90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes PA EVALUATION CIRCUIT (f = 460 MHz) VCE VBE R1 C10 C9 L2 C8 L1 RF OUT C1 RF IN C2 C3 C4 C5 C6 C7 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. NESG250134 COMPONENT LIST VALUE MAKER C1 30 pF Murata C2 6 pF Murata C3, C4 7 pF Murata C5 3 pF Murata C6 0.5 pF Murata C7 5 pF Murata C8 10 pF Murata C9, C10 100 nF Murata L1 100 nH Toko L2 3 nH Toko R1 30 Ω SSM OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 600 VCE = 3.6 V, f = 460 MHz IC (set) = 40 mA 20 500 GP 400 15 300 Pout 10 200 IC 5 0 -10 100 ηC -5 0 5 10 Input Power Pin (dBm) 15 0 20 Collector Current IC (mA), Collector Efficiency ηC (%) Output Power Pout (dBm), Power Gain GP (dB) PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS Remark The graphs indicate nominal characteristics. NESG250134 DISTORTION EVALUATION BOARD (f = 460 MHz) GND Vb VC GND R1 C12 C11 C10 C9 C1 SN SN RF IN RF OUT C8 C3 C2 L1 C4 C5 C6 C7 L2 Notes 1. 38 × 90 mm, t = 0.8 mm, double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes DISTORTION EVALUATION CIRCUIT (f = 460 MHz) VCE R1 VBE C12 C11 C10 L2 C9 L1 RF OUT C1 RF IN C2 C3 C4 C5 C6 C7 C8 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. NESG250134 COMPONENT LIST VALUE MAKER C1 47 pF Murata C2 12 pF Murata C3, C4 7 pF Murata C5 3 pF Murata C6 6 pF Murata C7 0.5 pF Murata C8 5 pF Murata C9 51 pF Murata C10, C12 100 nF Murata 1 μF Murata L1 100 nH Toko L2 15 nH Toko R1 30 Ω SSM C11 3rd Order Intermodulation Distortion IM3 (dBc) DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS 3RD ORDER INTERMODULATION DISTORTION vs. 1 TONE OUTPUT POWER 80 VCE = 3.6 V, f = 460 MHz, IC (set) = 30 mA, offset = 1 MHz 70 60 50 40 30 20 10 0 -5 0 5 10 15 20 25 1 tone Output Power Pout (dBm) Remark The graphs indicate nominal characteristics. NESG250134 3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT:mm) 4.5±0.1 1.5±0.1 0.8 MIN. 0.42±0.06 3 4.0±0.25 2 1 2.5±0.1 1.6±0.2 0.42±0.06 0.41+0.03 -0.06 0.47±0.06 1.5 3.0 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 03/07/2005 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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