Surface Mount Switching Diode COMCHIP www.comchip.com.tw BAS16 Voltage: 75 Volts Current: 200mA Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) .020 (0.5) 3 1 ANODE .056 (1.40) .047 (1.20) .037(0.95) .037(0.95) .020 (0.5) .044 (1.10) .035 (0.90) Case: SOT -23, Plastic Terminals : Solderable per NIL-STD -202, method 208 Approx. Weight: 0.008 gram 2 .006 (0.15) .002 (0.05) 1 .006 (0.15)max. Mechanical data CATHODE Top View 3 .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature MDS0212004A Page 1 Surface Mount Switching Diode COMCHIP www.comchip.com.tw ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max — — — 1.0 50 30 75 — — — — — 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) µAdc IR V(BR) Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD — 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR — 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 Ω) trr — 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) QS — 45 pC 1.FR–5 = 1.0 X 0.75 X 0.062 in. MDS0212004A mV 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Page 2 Surface Mount Switching Diode COMCHIP www.comchip.com.tw Rating and Characteristic Curves (BAS16) 820 Ω +10 V 2.0 k tr 0.1 µF 100 µH tp IF IF t trr 10% t 0.1 µF 90% DUT 50 Ω Input Sampling Oscilloscopes 50 Ω Output Pulse Generator IR(REC) = 1.0 mA IR VR Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Input Signal Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 TA = 85°C TA = 125°C IR , Reverse Current (µA) 1.0 10 TA = – 40°C 1.0 TA = 25°C TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 0 1.2 10 Figure 2. Forward Voltage 20 30 VR, Reverse Voltage (V) 40 50 Figure 3. Leakage Current 0.68 CD, Diode Capacitance (pF) IF, Forward Current (mA) (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, Reverse Voltage (V) Figure 4. Capacitance MDS0212004A Page 3