SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw CDBS0230 Io = 200 mA V R = 30 Volt s Features Designed for mounting on small surface Extremely thin package 0805(2012) Low stored charge 0.087(2.20) 0.079(2.00) 0.016(0.40) Typ Majority carrier conduction 0.008(R0.20) Typ. Mechanical data Case: 0.055(1.40) 0.047(1.20) 0805(2012) Standard package , molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method 2026. 0.043 (1.10) 0.035(0.90) Polarity: Indicated by cathode band. Mounting position: Any. Dimensions in inches and (millimeter) Weight: 0.0048 gram. (approximately) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Conditions Repetitive peak reverse voltage Symbol Min Typ Max Unit V RRM 35 V Reverse voltage VR 30 V Average forward current Io 200 mA Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) PD Power Dissipation mA 3000 I FSM 250 mW Storage temperature T STG -40 +125 C Junction temperature Tj -40 +125 C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Conditions Parameter Symbol Min Typ Max Unit Forward voltage I F = 200 mA DC VF 0.50 Reverse current V R = 30 V IR 30 Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage CT RDS0208013-C 10 V uA pF Page 1 SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDBS0230) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m Reverse current ( A ) 100 10 125 C 100u 75 C 10u 25 C 1u 0 0.1 -25 C 1 25 C 75 125 C C Forward current (mA ) 1000 0.3 0.2 100n 0.4 0.5 0.6 0 10 Forward voltage (V) 30 40 50 Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Fig. 4 - Current derating curve 100 Average forward current ( % ) Capacitance between terminals (pF) 20 f = 1 MHz Ta = 25 C 10 Mounting on glass epoxy PCBs 100 80 60 40 20 0 1 0 5 10 15 20 25 Reverse voltage (V) RDS0208013-C 30 35 0 25 50 75 100 125 150 Ambient temperature ( C ) Page 2