Surface Mount Switching Diode COMCHIP www.comchip.com.tw CDST 914 Voltage: 100 Volts Current: 200mA SOT-23 Features Fast Switching Speed .119 (3.0) .110 (2.8) .020 (0.5) Top View For General Purpose Switching Applications .056 (1.40) .047 (1.20) 3 High Conductance 2 Terminals : Solderable per NIL-STD -202, Method 208 .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) Case: SOT -23, Plastic .006 (0.15)max. 1 Mechanical Data .044 (1.10) .035 (0.90) Surface Mount Package Ideally Suite4d for Automatic Insertion Approx. Weight: 0.008 gram .020 (0.5) 3 1 CATHODE ANODE .103 (2.6) .086 (2.2) .020 (0.5) Dimensions in inches (millimeters) Maximum Ratings Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR Value 100 Units VDC IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Units Thermal Characteristics Characteristic Total Device Dissipation FR– 5 Board(1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD RșJA 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C RșJA 417 °C/W TJ, Tstg –55 to +150 °C Symbol V(BR) Min Max 100 - Vdc - 25 nAdc - 50 uAdc - 4.0 1.0 Vdc 4.0 nS PD Electrical Characterics (TA = 25°C unless otherwise noted) Characteristic (OFF CHARACTERISTICS) Reverse Breakdown Voltage ( I(BR) = 100 uAdc ) Reverse Voltage Leakage Current V R = 20 Vdc V R = 75 Vdc IR Diode Capacitance (VR = 0, f = 1.0 MHz)) Forward Voltage I F = 10 mAdc CT Reverse Recovery Time (IF = IR = 10 mAdc) Trr 1.FR–5 = 1.0 X 0.75X 0.062 in. MDS0210002A VF Units pF 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina. Page 1 Surface Mount Switching Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDST914) 820 Ω +10 V 2.0 k tr 0.1 µF IF 100 µH tp IF t trr 10% t 0.1 µF 90% DUT 50 Ω Input Sampling Oscilloscopes 50 Ω Output Pulse Generator IR(REC) = 1.0 mA IR VR Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Input Signal Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 TA = 150°C TA = –40°C TA = 125°C IR , Reverse Current (µA) 1.0 10 TA = 25°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 0.001 1.2 0 10 20 30 VF, Forward Voltage (V) VR, Reverse Voltage (V) Figure 2. Forward Voltage Figure 3. Leakage Current 40 50 0.68 CD , Diode Capacitance (pF) I F, Forward Current (mA) TA = 85°C 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 VR, Reverse Voltage (V) Figure 4. Capacitance MDS0210002A Page 2