COMCHIP CFRM105

SMD Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
CFRM101 Thru CFRM107
Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Exceeds environmental standard MIL-S19500/228
Low leakage current
MINI SMA
0.161(4.10)
0.146(3.70)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
Mechanical data
0.110(2.80)
0.094(2.40)
Case: Mini SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight: 0.04 gram
0.063(1.60)
0.055(1.40)
0.035(0.90) Typ.
0.035(0.90) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
Symbol
CFRM
101
CFRM
102
CFRM
103
CFRM
104
CFRM
105
CFRM
106
Max. Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
800
1000
V
Max. DC Blocking Voltage
V DC
50
100
200
400
600
800
1000
V
V RMS
35
70
140
280
420
560
700
V
Parameter
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
CFRM
107
Unit
I FSM
30
A
Max. Average Forward Current
Io
1.0
A
Max. Instantaneous Forward Current
at 1.0 A
VF
1.3
V
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100 C
IR
100
250
nS
5.0
50
uA
32
C/W
C
Typical. Thermal Resistance (Note 1)
R
Operating Junction Temperature
Tj
-55 to +150
Storage Temperature
T STG
-55 to +150
JA
500
C
Note 1: Thermal resistance from junction to ambient.
MDS0208017B
Page 1
SMD Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CFRM101 Thru CFRM107)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
100
Tj=125 C
Forward Current ( A )
Reverse Current ( uA )
1000
100
10
Tj=25 C
1.0
10
1
0.1
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0
0.01
20
40
60
80
100
120
140
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non repetitive Forward
Surge Current
=1MHz and applied
4VDC reverse voltage
30
50
Peak Surge Forward Current ( A )
Junction Capacitance (pF)
35
25
20
15
10
8.3mS Single Half Sine
Wave JEDEC methode
40
30
Tj=25 C
20
10
5
0
0
0.01
0.1
1.0
10
100
1
Reverse Voltage (V)
5
10
50
1 00
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
1.4
trr
10W
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
( )
(+)
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1W
NONINDUCTIVE
Average Forward Current ( A )
50W
NONINDUCTIVE
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
00
25
50
75
100
125
150
175
1cm
SET TIME BASE FOR
Ambient Temperature ( C)
50 / 10ns / cm
MDS0208017B
Page 2