General Purpose Transistor (PNP) COMCHIP www.comchiptech.com MMBT3906 PNP Silicon Type Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .037(0.95) .037(0.95) 3 1 BASE 2 .020 (0.5) .020 (0.5) EMITTER .044 (1.10) .035 (0.90) COLLECTOR .006 (0.15) .002 (0.05) 2 .006 (0.15)max. 1 .056 (1.40) .047 (1.20) 3 .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –40 Vdc Emitter – Base Voltage VEBO –5.0 Vdc IC –200 mAdc Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature MDS0306002A Page 1 General Purpose Transistor COMCHIP www.comchiptech.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) IBL Collector Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) ICEX 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Min Max –40 — –40 — –5.0 — — –50 — –50 Unit Vdc Vdc Vdc nAdc nAdc REM : Thermal Clad is a trademark of the Bergquist Company. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) ON CHARACTERISTICS(3) Symbol DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) HFE Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VBE(sat) Min Max 60 80 100 60 30 — — 300 — — — — –0.25 –0.4 –0.65 — –0.85 –0.95 250 — — 4.5 — 10 2.0 12 0.1 10 100 400 3.0 60 — 4.0 Unit — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hre Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hoe Noise Figure (IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF MHz pF pF kΩ X 10– 4 — mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = –3.0 Vdc, VBE = 0.5 Vdc, IC = –10 mAdc, IB1 = –1.0 mAdc) td — 35 tr — 35 (VCC = –3.0 Vdc, IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc) ts — 225 tf — 75 ns ns 3.Pulse Test: Pulse Width ı 300 ıs, Duty Cycle ı 2.0%. MDS0306002A Page 2 General Purpose Transistor COMCHIP www.comchiptech.com Rating and Characteristic Curves (MMBT3906) 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k 10 k +0.5 V 0 CS < 4 pF* 10.6 V 300 ns Duty Cycle = 2% CS < 4 pF* 1N916 10 < t1 < 500 ms Duty Cycle = 2% 10.9 V t1 * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, Charge (pC) Capacitance (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 Reverse Bias (V) 100 70 50 20 30 40 1.0 2.0 3.0 Figure 3. Capacitance 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 Figure 4. Charge Data 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 tr @ VCC = 3.0 V 15 V 30 20 t f , Fall Time (ns) Time (ns) IC/IB = 20 100 70 50 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 MDS0306002A 5.0 7.0 10 20 30 50 70 100 200 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 I C, Collector Current (mA) I C, Collector Current (mA) Figure 5. Turn – On Time Figure 6. Fall Time 50 70 100 200 Page 3 General Purpose Transistor COMCHIP www.comchiptech.com Rating and Characteristic Curves (MMBT3906) TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) SOURCE RESISTANCE = 200 IC = 1.0 mA 12 W f = 1.0 kHz NF, Noise Figure (dB) 4.0 SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 A m 2.0 8 6 m 0 0.1 0.2 0.4 1.0 2.0 4.0 10 f, Frequency (kHz) IC = 50 mA 4 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 IC = 1.0 mA 10 NF, Noise Figure (dB) 5.0 IC = 100 mA 2 20 40 0 100 0.1 0.2 0.4 40 1.0 2.0 4.0 10 20 R g, Source Resistance (k OHMS) Figure 7. 100 Figure 8. h PARAMETERS (VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 h oe, Output Admittance ( mmhos) 300 h fe , DC Current Gain 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) 5 5.0 7.0 10 0.1 0.2 Figure 9. Current Gain 3.0 5.0 7.0 10 h re , Voltage Feedback Ratio (X 10 –4 ) 10 10 h ie , Input Impedance (k OHMS) 2.0 0.5 0.7 1.0 I C, Collector Current (mA) Figure 10. Output Admittance 20 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.3 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) Figure 11. Input Impedance MDS0306002A 5.0 7.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 Figure 12. Voltage Feedback Ratio Page 4 General Purpose Transistor COMCHIP www.comchiptech.com Rating and Characteristic Curves (MMBT3906) TYPICAL STATIC CHARACTERISTICS 2.0 h FE, DC Current Gain (Normalized) TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 2.0 1.0 3.0 5.0 7.0 I C, Collector Current (mA) 10 20 70 50 30 100 200 Figure 13. DC Current Gain 1.0 VCE , Collector Emitter Voltage (V) TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 I B, Base Current (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region 1.0 1.0 VBE(sat) @ IC/IB = 10 V, Voltage (V) 0.8 q V, Temperature Coefficients (mV/°C) TJ = 25°C VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 5.0 50 10 20 I C, Collector Current (mA) Figure 15. “ON” Voltages MDS0306002A 100 200 0.5 qVC FOR VCE(sat) 0 +25°C TO +125°C – 55°C TO +25°C – 0.5 +25°C TO +125°C – 1.0 – 55°C TO +25°C qVB FOR VBE(sat) – 1.5 – 2.0 0 20 40 60 80 100 120 140 I C, Collector Current (mA) 160 180 200 Figure 16. Temperature Coefficients Page 5