RM912 CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) The RM912 dual mode Code Division Multiple Access (CDMA)/Advanced Mobile Phone Service (AMPS) Power Amplifier is a fully matched 6-pin LCC surface mount module designed for mobile units operating in the 824-849 MHz cellular bandwidth. This device meets stringent IS95 CDMA linearity requirements to beyond 28 dBm output power and can be driven to power output levels beyond 31 dBm for high efficiency FM mode operation. A single GaAs Microwave Monolithic Intergrated Circuit (MMIC) contains all active circuitry in the module. The MMIC contains on-board bias circuitry, as well as input and interstage matching circuits. The output match is realized off-chip within the module package to optimize efficiency and power performance into a 50 Ω load. This device is manufactured with Conexant’s GaAs HBT process that provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity. Primary bias to the RM912 can be supplied directly from a three cell nickel-cadmium, single cell lithium-ion, or other suitable battery with output in the 3-4 volt range. Power down is accomplished by setting the voltage on the low current reference pin to zero volts. No external supply side switch is needed as typical “off” leakage is a few microamperes with full primary voltage supplied from the battery. Distinguishing Features • • • • • • • Low voltage positive bias supply Good linearity High efficiency Dual mode operation Large dynamic range 6-pin LCC package (6 x 6 x 1.5 mm) Power down control Applications • • • Digital cellular (CDMA) Analog cellular (AMPS) Wireless local loop Functional Block Diagram VREF (3) Driver Stage Bias RF Input (2) Input Match VCC2 (4) VCC1 (1) Power Stage Bias Inter Stage Match DA PA Output Match RF Output (5) MMIC MODULE GND (6, 7) Data Sheet 2000, Conexant Systems, Inc. All Rights Reserved. GND (6, 7) 100635G August 2000 RM912 Electrical Specifications CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Electrical Specifications The following tables list the electrical characteristics of the RM912 Power Amplifier. Table 1 lists the absolute maximum rating for continuous operation. Table 2 lists the recommended operating conditions for achieving the electrical performance listed in Table 3. Table 3 lists the electrical performance of the RM912 Power Amplifier over the recommended operating conditions. Table 1. Absolute Maximum Ratings(1) Parameter Symbol Min Nominal Max Unit RF Input Power Pin — 3.0 6.0 dBm Supply Voltage Vcc — 3.4 5.0 Volts Reference Voltage Vref — 3.0 3.3 Volts Tc –30 25 +110 °C Tstg –55 — +125 °C Case Operating Temperature Storage Temperature NOTE(S): (1) No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. Table 2. Recommended Operating Conditions Parameter 2 Symbol Min Nominal Max Unit Supply Voltage Vcc 3.2 3.4 4.2 Volts Reference Voltage Vref 2.9 3.0 3.1 Volts Operating Frequency Fo 824.0 836.5 849.0 MHz Operating Temperature To –30 +25 +85 °C Conexant 100635G RM912 Electrical Specifications CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Table 3. Electrical Specifications for CDMA / AMPS Nominal Operating Conditions(1) Characteristics Condition Symbol Min Typical Max Unit Vref = 3.0 Iq — 100.0 — mA Vref = 2.9 Iq — 80.0 — mA Po = 0 dBm G 26.0 28.0 — dB Po = 28 dBm Gp 27.0 29.0 — dB Po = 0 dBm G 26.0 28.0 — dB Po = 31 dBm Gp 26.0 28.0 — dB – Analog Mode Po = 31 dBm PAEa 43.0 45.0 — % – Digital Mode Po = 28 dBm PAEd 32.0 34.0 — % – 885 kHz Offset Po ≤ 28 dBm ACP1 — –50.0 –48.0 dBc –1980 kHz Offset Po ≤ 28 dBm ACP2 — –58.0 –56.0 dBc – Second Po ≤ 31 dBm AFo2 — –42.0 –30.0 dBc – Third Po ≤ 31 dBm AFo3 — –45.0 –30.0 dBc Po @ 28 dBm RxBN — –134.0 –133.0 dBm/Hz Noise Figure — NF — 6.0 — dB Input Voltage Standing Wave Ratio — VSWR — 1.4:1 — — Stability (Spurious output) 5:1 VSWR All phases S — — –60.0 dBc Ruggedness – No damage Po ≤ 31 dBm Ru 10:1 — — VSWR Quiescent current Gain–Digital Gain–Analog Power Added Efficiency Adjacent Channel Power (2) Harmonic Suppression Noise Power in RX Band 869-894 MHz NOTE(S): (1) (2) Vcc = +3.4 V, Vref = +3.0 V, Freq = 836.5 MHz, Tc = 25 °C, unless otherwise specified. ACP is specified per IS95 as the ratio of the total in-band power (1.23 MHz BW) to adjacent power in a 30 kHz BW. 100635G Conexant 3 RM912 Electrical Specifications CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Table 4. Electrical Specifications Limits for CDMA / AMPS Recommended Operating Conditions(1) Characteristics Quiescent current Gain–Digital Gain–Analog Condition Symbol Min Max Unit Vref = 3.0 Iq — 140.0 mA Po = 0 dBm G 25.0 29.0 dB Po = 28 dBm Gp 25.0 32.0 dB Po = 0 dBm G 25.0 29.0 dB Po = 31dBm Gp 24.0 32.0 dB – Analog Mode Po = 31 dBm PAEa 42.0 — % – Digital Mode Po = 28 dBm PAEd 32.0 — % – 885 kHz Offset Po ≤ 28 dBm ACP1 — –44.0 dBc –1980 kHz Offset Po ≤ 28 dBm ACP2 — –56.0 dBc – Second Po ≤ 31 dBm AFo2 — –40.0 dBc – Third Po ≤ 31 dBm AFo3 — –40.0 dBc Po @ 28 dBm RxBN — –131.0 dBm/Hz — VSWR — 2:1 — Power Added Efficiency Adjacent Channel Power(2) Harmonic Suppression Noise Power in RX Band 869—894 MHz Input Voltage Standing Wave Ratio NOTE(S): (1) (2) 4 Per Table 2. ACP is specified per IS95 as the ratio of the total in-band power (1.23 MHz BW) to adjacent power in a 30 kHz BW. Conexant 100635G RM912 Characterization Data CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Characterization Data The following charts illustrate the characteristics of a typical RM912 Power Amplifier tested in the evaluation board described in the following section. The amplifier was selected by characterizing a group of devices and choosing a part with average electrical performance at both nominal and worst case (limit) conditions. Figures 1 through 4 illustrate the digital signal characteristics and Figures 5 through 8 illustrate the analog characteristics of the RM912. Figure 1. Digital Gain vs. Output Power Vref = 3.0V, Vcc = 3.4V 32.50 Gain (dB) 30.00 27.50 25.00 22.50 0.00 5.00 10.00 15.00 Output Power (dBm) 20.00 25.00 30.00 Legend ◆ ■ ▲ 100635G 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C ◆ ■ ▲ 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Conexant ◆ ■ ▲ 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 5 RM912 Characterization Data CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Figure 2. Digital Adjacent Channel Power Magnitude (ACP1) vs. Output Power Vref = 3.0V, Vcc = 3.4V, 885 kHz Of fset 80.00 | ACP1 (dBc) | 70.00 60.00 50.00 40.00 30.00 20.00 0.00 5.00 10.00 15.00 20.00 25.00 30.00 25.00 30.00 Output Pow er (dBm ) Figure 3. Digital Adjacent Channel Power Magnitude (ACP2) vs. Output Power Vref = 3.0V, Vcc = 3.4V, 1980 kHz Offset 80.00 | ACP2 (dBc) | 70.00 60.00 50.00 40.00 30.00 20.00 0.00 5.00 10.00 15.00 20.00 Output Pow er (dBm ) Legend ◆ ■ ▲ 6 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C ◆ ■ ▲ 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Conexant ◆ ■ ▲ 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 100635G RM912 Characterization Data CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Figure 4. Digital Power Added Efficiency vs. Output Power Vref = 3.0V, Vcc = 3.4V 40.00 35.00 30.00 DPAE (%) 25.00 20.00 15.00 10.00 5.00 0.00 0.00 5.00 10.00 15.00 Output Power (dBm) 20.00 25.00 30.00 Figure 5. Analog Gain vs. Output Power Vref = 3.0V, Vcc = 3.4V 32.50 Gain (dB) 30.00 27.50 25.00 22.50 0.00 5.00 10.00 15.00 20.00 Output Pow er (dBm) 25.00 30.00 Legend ◆ ■ ▲ 100635G 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C ◆ ■ ▲ 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Conexant ◆ ■ ▲ 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 7 RM912 Characterization Data CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Figure 6. Analog Power Added Efficiency vs. Output Power Vref = 3.0V, Vcc = 3.4V 50.00 45.00 40.00 35.00 PAE (%) 30.00 25.00 20.00 15.00 10.00 5.00 0.00 0.00 5.00 10.00 15.00 20.00 Output Power (dBm) 25.00 30.00 Figure 7. Analog Second Order Harmonic Suppression Magnitude Vref = 3.0V, Vcc = 3.4V 70.00 | AFo2 (dBc) | 60.00 50.00 40.00 30.00 20.00 10.00 0.00 10.00 15.00 20.00 25.00 30.00 Output Pow er (dBm ) Legend ◆ ■ ▲ 8 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C ◆ ■ ▲ 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Conexant ◆ ■ ▲ 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 100635G RM912 Characterization Data CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Figure 8. Analog Third Order Harmonic Suppression Magnitude Vref = 3.0V, Vcc = 3.4V 70.00 60.00 | AFo3 (dBc) | 50.00 40.00 30.00 20.00 10.00 0.00 10.00 15.00 20.00 Output Pow er (dBm ) 25.00 30.00 Legend ◆ ■ ▲ 100635G 824 MHz @ –30 °C 837 MHz @ –30 °C 849 MHz @ –30 °C ◆ ■ ▲ 824 MHz @ +25 °C 837 MHz @ +25 °C 849 MHz @ +25 °C Conexant ◆ ■ ▲ 824 MHz @ +85 °C 837 MHz @ +85 °C 849 MHz @ +85 °C 9 RM912 Characterization Data CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Figure 9. Digital Gain vs. Output Power Digital Gain at 28 dBm output power (dB) 40.00 COL D R OOM T EMP ER AT UR E 35.00 824 MHz 836.5 MHz HOT 849 MHz 30.00 25.00 20.00 15.00 10.00 5.00 0.00 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V - 30C -30C - 30C 25C 25C 25C 85C 85C 85C Col l ect or Vol t age Cas e T emper at u r e Figure 10. Digital Adjacent Channel Power Magnitude (ACP1) vs. Output Power | ACP1 at 28 dBm Output Power (dBc) | 70.00 COL D R OOM T EMP ER AT UR E 824 MHz 60.00 836.5 MHz HOT 849 MHz 50.00 40.00 30.00 20.00 10.00 0.00 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V - 30C -30C - 30C 25C 25C 25C 85C 85C 85C C o l l ect o r V o l t ag e C as e T emper at ur e 10 Conexant 100635G RM912 Characterization Data CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Figure 11. Digital Adjacent Channel Power Magnitude (ACP2) vs. Output Power | ACP2 at 28 dBm Output Power (dBc) | 80.00 COL D R OOM T EMP ER AT UR E 70.00 824 MHz 836.5 MHz HOT 849 MHz 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V - 30C -30C - 30C 25C 25C 25C 85C 85C 85C Co l l ect o r V o l t ag e C as e T emp er at ur e Analog Gain at 31 dBm Output Power (dB) Figure 12. Analog Gain vs. Output Power 40.00 COL D R OOM T EMP ERAT URE 35.00 824 MHz 836.5 MHz HOT 849 MHz 30.00 25.00 20.00 15.00 10.00 5.00 0.00 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V - 30C - 30C - 30C 25C 25C 25C 85C 85C 85C Co l l ect or V ol t age Cas e T emper at ur e 100635G Conexant 11 RM912 Characterization Data CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Figure 13. Analog Second Order Harmonic Suppression Magnitude | AFo2 at 31 dBm Output Power (dBc) | 70.00 COL D R OOM T EMP ER AT UR E HOT 60.00 824 MHz 836.5 MHz 849 MHz 50.00 40.00 30.00 20.00 10.00 0.00 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V - 30C - 30C - 30C 25C 25C 25C 85C 85C 85C C o l l ect o r V o l t age C as e T emper at ur e | AFo3 at 31 dBm Output Power (dBc) | Figure 14. Analog Third Order Harmonic Suppression Magnitude 70.00 ROOM T E MPE RAT URE COLD 824 MHz 836.5 MHz HOT 849 MHz 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V -30C - 30C -30C 25C 25C 25C 85C 85C 85C Col l ect or V ol t age Cas e T emper at ur e 12 Conexant 100635G RM912 Characterization Data CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Figure 15. Noise Figure Variation Over Recommended Operating Conditions 10.00 COL D ROOM T EMP ER AT UR E HOT 9.00 824 MHz 836.5 MHz 849 MHz Noise Figure (dB) 8.00 7.00 6.00 5.00 4.00 3.00 2.00 1.00 0.00 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V -30C -30C -30C 25C 25C 25C 85C 85C 85C Col l ect o r V ol t age Cas e T emper at ur e Figure 16. Voltage Standing Wave Ratio Variation Over Recommended Operating Conditions 2.00 COL D ROOM T EMP ERAT UR E HOT 1.80 824 MHz 836.5 MHz 849 MHz 1.60 VSWR (:1) 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V 3.20V 3.40V 4.20V - 30C - 30C - 30C 25C 25C 25C 85C 85C 85C Co l l ect o r V o l t age Cas e T emper at ur e 100635G Conexant 13 RM912 Evaluation Board Description CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Evaluation Board Description The evaluation board is a platform for testing and interfacing design circuitry. To accommodate the interface testing of the RM912, the evaluation board schematic and diagrams are included for preliminary analysis and design. Figure 17 shows the basic schematic of the board for the 824 MHz to 849 MHz range. Figure 18 illustrates the board layout. Figure 17. Evaluation Board Schematic 1 VCC1 2 RFIN 3 VREF GND 6 C1 RFIN RFOUT RFOUT 5 VCC2 4 C2 C3 C4 Vref Vcc 100635_003 Figure 18. Evaluation Board Assembly Diagram REF DESIGNATIONS C1 C2 C3 C4 VALUES 100 pF 4.7 uF 39 pF 1000 pF QTY 1 1 1 1 100635_004 14 Conexant 100635G RM912 Package Dimensions and Pin Descriptions CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Package Dimensions and Pin Descriptions The RM912 is a multi-layer laminate base, overmold encapsulated modular package designed for surface mount solder attachment to a printed circuit board. Figure 19. RM912 Package Drawing PIN 1 PIN 6 PIN 2 PIN 5 PIN 3 PIN 4 5.92/6.15 [.2333/.242] 5.92/6.15 [.2333/.242] 1.500 [.060] TYP 2.870 [.113] (4x) 2.870 [.113] (2x) 1.854 [.073] (6x) 1.981 [.078] (2x) 1.245 [.049] (2x) 1.219 [.048] (2x) 2.006 [.079 (4X) PIN 7 2.500 [.0098] (4x) 2.500 [.0098] (4x) 1.016 [.040] .762 [.030] 6x (PIN 1) COPPER BOTTOM R .500 TYP [R .020 TYP] SOLDER MASK BOTTOM 100635_002 100635G Conexant 15 RM912 Package Dimensions and Pin Descriptions CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Table 5. Pin Description Pin # Function 1 VCC1(1) 2 RF Input 3 VREF 4 VCC2(1) 5 RF Output 6 GND 7 GND(2) NOTE(S): (1) (2) All supply pins may be connected together at the supply. Package underside is GND. Figure 20. Typical Case Markings Mark Pin 1 Identifier CONEXANT Manufacturing Part Number - Revision RM912-11 NXXXXX.XX YYWW MEX Lot Number YY = Manufacture Year WW = Week Package Sealed MEX = Country Code 100635_006 16 Conexant 100635G RM912 Package Dimensions and Pin Descriptions CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Production quantities of this product are shipped in the standard tape-and-reel format illustrated below. Figure 21. 6 x 6 Tape and Reel 8.00 ± .10 4.00 ± .10 1.50 ± .10 1.75 ± .10 PIN 1 5.50 ± .10 12.00 0.292 ± .02 +.30 -.10 1.50 ± .25 8˚ MAX 7˚ MAX 1.59 ± .10 6.35 ± .10 6.35 ± .10 A 0 K 0 B 0 3M Carrier Tape 100635_005 100635G Conexant 17 RM912 Electrostatic Discharge Sensitivity CDMA/AMPS 3–4 Volt Power Amplifier (824–849 MHz) Electrostatic Discharge Sensitivity The RM912 is a Class I device. Figure 22 lists the Electrostatic Discharge (ESD) immunity level for each pin of the RM912 product. The numbers in Figure 22 specify the ESD threshold level for each pin where the I-V curve between the pin and ground starts to show degradation. The ESD testing was performed in compliance with MIL-STD-883E Method 3015.7 using the Human Body Model. Since 2000 volts represents the maximum measurement limit of the test equipment used, pins marked > 2000 V pass 2000V ESD stress. Figure 22. ESD Sensitivity Areas > +1950 V < -2000 V VCC1 1 > +2000 V < -2000 V RF IN 2 > +2000 V VREF < -2000 V 3 RM912-14P N14716.6 0015 Mexico 6 GND 5 > +2000 V RF OUT < -2000 V 4 VCC2 > +1400 V < -2000 V 100635_007 Various failure criteria can be utilized when performing ESD testing. Many vendors employ relaxed ESD failure standards which fail devices only after “the pin fails the electrical specification limits” or “the pin becomes completely non-functional”. Conexant employs most stringent criteria, fails devices as soon as the pin begins to show any degradation on a curve tracer. To avoid ESD damage, latent or visible, it is very important the Class-1 ESD handling precautions listed in Table 6 be used in the product assembly and test areas follow. Table 6. Precautions for GaAs ICs with ESD Thresholds Greater Than 200V But Less Than 2000V Personnel Grounding Wrist Straps Conductive Smocks, Gloves and Finger Cots Antistatic ID Badges Facility Relative Humidity Control and Air Ionizers Dissipative Floors (less than 109 Ω to GND) Protective Workstation Dissipative Table Tops Protective Test Equipment (Properly Grounded) Grounded Tip Soldering Irons Conductive Solder Suckers Static Sensors Protective Packaging & Transportation Bags and Pouches (Faraday Shield) Protective Tote Boxes (Conductive Static Shielding) Protective Trays Grounded Carts Protective Work Order Holders 18 Conexant 100635G Ordering Information Model Number Manufacturing Part Number Product Revision Package Operating Temperature — RM912 –14 6x6LM–6 –30 °C to +85 °C Revision History Revision Level Date Description A March 2000 Preliminary Information B March 2000 Updated Preliminary Information C June 2000 Added Characterization Data, Released D July 2000 Updated ESD Data E July 2000 Preprint Update F August 2000 Web Site Update G August 2000 Web Format Corrections Information in this document is provided in connection with Conexant Systems, Inc. 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