03/11/2004 RELIABILITY REPORT FOR DS21354, Rev B2 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected] ph: 972-371-3726 fax: 972-371-6016 mbl: 214-435-6610 Conclusion: The following qualification successfully meets the quality and reliability standards required of all Dallas Semiconductor products and processes: DS21354, Rev B2 In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing product will continue to meet Maxim's quality and reliability standards. The current status of the reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html. Device Description: A description of this device can be found in the product data sheet. You can find the product data sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm. Reliability Derating: The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that are temperature accelerated. AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts AfT = Acceleration factor due to Temperature tu = Time at use temperature (e.g. 55°C) ts = Time at stress temperature (e.g. 125°C) k = Boltzmann’s Constant (8.617 x 10-5 eV/°K) Tu = Temperature at Use (°K) Ts = Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All deratings will be done from the stress ambient temperature to the use ambient temperature. An exponential model will be used to determine the acceleration factor for failure mechanisms, which are voltage accelerated. AfV = exp(B*(Vs - Vu)) AfV = Acceleration factor due to Voltage Vs = Stress Voltage (e.g. 7.0 volts) Vu = Maximum Operating Voltage (e.g. 5.5 volts) B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.) The Constant, B, related to the failure mechanism is derived from either internal studies or industry accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are unknown. All deratings will be done from the stress voltage to the maximum operating voltage. Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the 60% or 90% confidence level (Cf). The failure rate, Fr, is related to the acceleration during life test by: Fr = X/(ts * AfV * AfT * N * 2) X = Chi-Sq statistical upper limit N = Life test sample size Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate is related to MTTF by: MTTF = 1/Fr NOTE: MTTF is frequently used interchangeably with MTBF. The calculated failure rate for this device/process is: FAILURE RATE: MTTF (YRS): 9048 FITS: 12.6 The parameters used to calculate this failure rate are as follows: Cf: 60% Ea: 0.7 B: 0 Tu: 25 °C Vu: 5.5 Volts The reliability data follows. A the start of this data is the device information. The next section is the detailed reliability data for each stress. The reliability data section includes the latest data available and may contain some generic data. Device Information: Process: Passivation: Die Size: Number of Transistors: Interconnect: Gate Oxide Thickness: 8"-D6H-2P2M,HPVt,TCN1 ALOCOS:GOI Passivation w/OxyNitride-Nov. 4% PSG 293 x 311 172615 Aluminum / 1% Silicon / 0.5% Copper 150 Å ELECTRICAL CHARACTERIZATION DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY ESD SENSITIVITY 0336 EOS/ESD S5.1 HBM 500 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0336 EOS/ESD S5.1 HBM 1000 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0336 EOS/ESD S5.1 HBM 2000 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0336 EOS/ESD S5.1 HBM 4000 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0336 EOS/ESD S5.1 HBM 8000 VOLTS 1 PUL'S 3 3 LATCH-UP 0336 JESD78, I-TEST 125C 6 0 LATCH-UP 0336 JESD78, Vsupply TEST 125C 6 0 Total: FAILS 3 OPERATING LIFE DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY HIGH TEMP OP LIFE 0336 1000 HRS 125C, 5.25 VOLTS 77 Total: FAILS 0 0 TEMPERATURE CYCLE DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY TEMP CYCLE 0336 1000 CYS -55C TO 125C 77 Total: FAILS 0 0 TEMPERATURE HUMIDITY BIAS DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY HAST 0336 96 130C, 85%R.H.,3.5V HRS 77 FAILS 0 Total: 0 UNBIASED MOISTURE RESISTANCE DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY HAST, NO BIAS 0336 200 130C, 85% R.H. HRS Total: FAILURE RATE: MTTF (YRS): 9048 FITS: 12.6 77 FAILS 0 0