DALLAS DS21354

03/11/2004
RELIABILITY REPORT
FOR
DS21354, Rev B2
Dallas Semiconductor
4401 South Beltwood Parkway
Dallas, TX 75244-3292
Prepared by:
Ken Wendel
Reliability Engineering Manager
Dallas Semiconductor
4401 South Beltwood Pkwy.
Dallas, TX 75244-3292
Email : [email protected]
ph: 972-371-3726
fax: 972-371-6016
mbl: 214-435-6610
Conclusion:
The following qualification successfully meets the quality and reliability standards required of all Dallas
Semiconductor products and processes:
DS21354, Rev B2
In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing
product will continue to meet Maxim's quality and reliability standards. The current status of the
reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html.
Device Description:
A description of this device can be found in the product data sheet. You can find the product data
sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm.
Reliability Derating:
The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that
are temperature accelerated.
AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts
AfT = Acceleration factor due to Temperature
tu = Time at use temperature (e.g. 55°C)
ts = Time at stress temperature (e.g. 125°C)
k = Boltzmann‚Äôs Constant (8.617 x 10-5 eV/°K)
Tu = Temperature at Use (°K)
Ts = Temperature at Stress (°K)
Ea = Activation Energy (e.g. 0.7 ev)
The activation energy of the failure mechanism is derived from either internal studies or industry
accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms
or their activation energies are unknown. All deratings will be done from the stress ambient
temperature to the use ambient temperature.
An exponential model will be used to determine the acceleration factor for failure mechanisms,
which are voltage accelerated.
AfV = exp(B*(Vs - Vu))
AfV = Acceleration factor due to Voltage
Vs = Stress Voltage (e.g. 7.0 volts)
Vu = Maximum Operating Voltage (e.g. 5.5 volts)
B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.)
The Constant, B, related to the failure mechanism is derived from either internal studies or industry
accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are
unknown. All deratings will be done from the stress voltage to the maximum operating voltage.
Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the
60% or 90% confidence level (Cf).
The failure rate, Fr, is related to the acceleration during life test by:
Fr = X/(ts * AfV * AfT * N * 2)
X = Chi-Sq statistical upper limit
N = Life test sample size
Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate
is related to MTTF by:
MTTF = 1/Fr
NOTE: MTTF is frequently used interchangeably with MTBF.
The calculated failure rate for this device/process is:
FAILURE RATE:
MTTF (YRS): 9048
FITS: 12.6
The parameters used to calculate this failure rate are as follows:
Cf: 60%
Ea: 0.7
B: 0
Tu: 25
°C
Vu: 5.5
Volts
The reliability data follows. A the start of this data is the device information. The next section is the
detailed reliability data for each stress. The reliability data section includes the latest data available
and may contain some generic data.
Device Information:
Process:
Passivation:
Die Size:
Number of Transistors:
Interconnect:
Gate Oxide Thickness:
8"-D6H-2P2M,HPVt,TCN1 ALOCOS:GOI
Passivation w/OxyNitride-Nov. 4% PSG
293 x 311
172615
Aluminum / 1% Silicon / 0.5% Copper
150 Å
ELECTRICAL CHARACTERIZATION
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 500 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 1000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 2000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 4000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 8000 VOLTS
1
PUL'S
3
3
LATCH-UP
0336
JESD78, I-TEST 125C
6
0
LATCH-UP
0336
JESD78, Vsupply TEST 125C
6
0
Total:
FAILS
3
OPERATING LIFE
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
HIGH TEMP OP LIFE
0336
1000 HRS
125C, 5.25 VOLTS
77
Total:
FAILS
0
0
TEMPERATURE CYCLE
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
TEMP CYCLE
0336
1000 CYS
-55C TO 125C
77
Total:
FAILS
0
0
TEMPERATURE HUMIDITY BIAS
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
HAST
0336
96
130C, 85%R.H.,3.5V
HRS
77
FAILS
0
Total:
0
UNBIASED MOISTURE RESISTANCE
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
HAST, NO BIAS
0336
200
130C, 85% R.H.
HRS
Total:
FAILURE RATE:
MTTF (YRS): 9048
FITS: 12.6
77
FAILS
0
0