7MBR25SC120 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 1200V / 25A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Brake Thyristor Continuous ICP 1ms Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Condition VCES VGES IC Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque -IC PC VCES VGES IC Tc=25°C Tc=80°C Tc=25°C Tc=80°C 1 device Continuous ICP 1ms PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C 50Hz/60Hz sine wave Tj=125°C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N·m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. Rating 1200 ±20 35 25 70 50 25 180 1200 ±20 25 15 50 30 110 1200 1600 1600 25 290 125 1600 25 260 338 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A °C V A A A 2s °C °C V V N·m 7MBR25SC120 IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 100 200 5.5 7.2 8.5 2.1 2.2 2.6 3000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr toff tf VF Reverse current Resistance IRRM R B value B VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=25mA VGE=15V, Ic=25A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =600V IC=25A VGE=±15V RG=51Ω IF=25A chip terminal IF=25A VCES=1200V, VGE=0V VCE=0V, VGE=±20V IC=15A, VGE=15V chip terminal V CC =600V IC=15A VGE=±15V RG=82Ω V R=1200V V DM =1600V V RM =1600V VD=6V, IT=1A VD=6V, IT=1A ITM=25A chip terminal IF=25A chip terminal V R=1600V T=25°C T=100°C T=25/50°C Symbol Condition Turn-off Brake Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage ton tr toff tf IRRM IDM IRRM IGT V GT V TM Forward on voltage V FM Thermistor Converter Thyristor Turn-off time 0.35 0.25 0.45 0.08 2.3 2.4 2.1 2.2 0.35 0.25 0.45 0.08 1.05 1.1 1.1 1.2 465 3305 5000 495 3375 1.2 0.6 1.0 0.3 µA nA V V pF µs V 3.2 350 100 200 2.6 1.2 0.6 1.0 0.3 100 1.0 1.0 100 2.5 1.15 ns µA nA V µs µA mA mA mA V V V 1.5 100 520 3450 µA Ω K Thermal resistance Characteristics Item Min. Thermal resistance ( 1 device ) Contact thermal resistance * Rth(j-c) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Characteristics Typ. Max. Unit 0.69 1.30 1.14 1.00 0.90 0.05 °C/W 7MBR25SC120 IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 60 60 VGE= 20V 15V VGE= 20V 15V 12V 12V 50 Collector current : Ic [ A ] Collector current : Ic [ A ] 50 40 10V 30 20 10 40 10V 30 20 10 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 60 5 10 Tj= 25°C Tj= 125°C Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 50 40 30 20 10 0 8 6 4 Ic= 50A Ic= 25A 2 Ic= 12.5A 0 0 1 2 3 4 5 5 10 Collector - Emitter voltage : VCE [ V ] 20 25 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25°C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector - Emitter voltage : VCE [ V ] 10000 Capacitance : Cies, Coes, Cres [ pF ] 15 Gate - Emitter voltage : VGE [ V ] Cies 1000 Coes 1000 25 800 20 600 15 400 10 200 5 Cres 0 100 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 50 100 150 Gate charge : Qg [ nC ] 200 0 250 7MBR25SC120 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=51Ω, Tj= 25°C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 51Ω, Tj= 125°C 1000 1000 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 tf 500 ton tr tf 100 50 50 0 10 20 30 40 0 10 20 30 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=25A, VGE=±15V, Tj= 25°C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=51Ω 5000 7 Eon(125°C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] 6 1000 500 toff ton tr 100 5 Eon(25°C) 4 3 Eoff(125°C) 2 Eoff(25°C) Err(125°C) 1 tf Err(25°C) 50 0 10 50 100 500 0 10 Gate resistance : Rg [ Ω ] 20 30 40 50 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=25A, VGE=±15V, Tj= 125°C 20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 40 Collector current : Ic [ A ] 300 250 15 Eon 200 10 SCSOA (non-repetitive pulse) 150 100 5 Eoff 50 RBSOA Err 0 0 10 50 100 Gate resistance : Rg [ Ω ] 500 0 200 400 600 800 1000 1200 1400 IGBT Module 7MBR25SC120 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=51Ω [ Inverter ] Forward current vs. Forward on voltage (typ.) 60 300 Tj=125°C Tj=25°C 50 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] trr(125°C) 40 30 20 10 100 trr(25°C) Irr(125°C) Irr(25°C) 0 10 0 1 2 3 4 0 10 20 30 40 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) [ Thyristor ] On-state current vs. On-state voltage (typ.) 60 100 Tj= 25°C Tjw= 125°C Tj= 125°C Forward current : IF [ A ] 50 40 30 10 20 10 0 0.0 0.4 0.8 1.2 1.6 2 0.0 2.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 5 FWD[Inverter] IGBT[Brake] Thyristor Conv. Diode IGBT[Inverter] 1 Resistance : R [ kΩ ] Thermal resistanse : Rth(j-c) [ °C/W ] 100 0.1 0.01 0.001 0.01 0.1 Pulse width : Pw [ sec ] 1 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 Temperature [ °C ] 120 140 160 180 7MBR25SC120 IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 35 35 VGE= 20V15V 30 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V 15V 12V 30 20 10V 15 10 5 12V 10V 20 15 10 5 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 35 5 10 Tj= 25°C Tj= 125°C Collector - Emitter voltage : VCE [ V ] 30 Collector current : Ic [ A ] 25 20 15 10 8 6 4 Ic= 30A Ic= 15A 2 Ic= 7.5A 5 0 0 0 1 2 3 4 5 5 Collector - Emitter voltage : VCE [ V ] 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25°C [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] 10 Cies 1000 Coes 100 1000 25 800 20 600 15 400 10 200 5 Cres 0 50 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 50 100 Gate charge : Qg [ nC ] 0 150 IGBT Module 7MBR25SC120 Outline Drawings, mm Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] [ Thyristor ] 21 (P) 26 [ Brake ] [ Inverter ] [ Thermistor ] 22(P1) 8 20 (Gu) 25 1(R) 2(S) 3(T) 19(Eu) 7(B) 14(Gb) 23(N) 24(N1) 13(Gx) 18 (Gv ) 16 (Gw) 17(Ev ) 4(U) 15(Ew) 5(V) 12(Gy ) 6(W) 11(Gz) 10(En) 9