BCX 71 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.9 Dimensions / Maße in mm 1=B 2=E 3=C PNP SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCX 71 Collector-Emitter-voltage B open - VCE0 45 V Collector-Base-voltage E open - VCB0 45 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (DC) - IC 100 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA Peak Base current – Basis-Spitzenstrom - IBM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 32 V - ICB0 – – 20 nA IE = 0, - VCB = 32 V, Tj = 150/C - ICB0 – – 20 :A - IEB0 – – 20 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 4 V 2 Collector saturation volt. – Kollektor-Sättigungsspg. ) 1 - IC = 10 mA, - IB = 0.25 mA - VCEsat 60 mV – 250 mV - IC = 50 mA, - IB = 1.25 mA - VCEsat 120 mV – 550 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 58 01.11.2003 General Purpose Transistors BCX 71 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 10 mA, - IB = 0.25 mA - VBEsat 600 mV – 850 mV - IC = 50 mA, - IB = 1.25 mA - VBEsat 700 mV – 1050 mV 1 DC current gain – Kollektor-Basis-Stromverhältnis ) - VCE = 5 V, - IC = 10 :A - VCE = 5 V, - IC = 2 mA - VCE = 1 V, - IC = 50 mA BCX 71G hFE – – – BCX 71H hFE 30 – – BCX 71J hFE 40 – – BCX 71K hFE 100 – – BCX 71G hFE 120 – 220 BCX 71H hFE 180 – 310 BCX 71J hFE 250 – 460 BCX 71K hFE 380 – 630 BCX 71G hFE 60 – – BCX 71H hFE 80 – – BCX 71J hFE 100 – – hFE 110 – – BCX 71K 1 Base-Emitter voltage – Basis-Emitter-Spannung ) - VCE = 5 V, - IC = 10 :A - VBEon – 550 mV – - VCE = 5 V, - IC = 2 mA - VBEon 600 mV 650 mV 750 mV - VCE = 1 V, - IC = 50 mA - VBEon – 720 mV – 100 MHz – – – 4.5 pF – CEB0 – 11 pF – F – 2 dB 6 dB Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 :A, RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking Stempelung BCX 71G = BG BCX 71H = BH 420 K/W 2) RthA BCX 70 series BCX 71J = BJ BCX 71K = BK ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 59