DYNEX DCR1575SY

DCR1575SY
DCR1575SY
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4401-4.0
DS4401 -5.0 July 2001
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VDRM
4200V
■ High Surge Capability
IT(AV)
2536A
ITSM
44000A
dVdt*
1000V/µs
dI/dt
300A/µs
■ High Mean Current
■ Fatigue Free
APPLICATIONS
*Higher dV/dt selections available
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VDRM VRRM
V
4200
DCR1575SY42
4000
DCR1575SY40
3800
DCR1575SY38
3600
DCR1575SY36
3400
DCR1575SY34
3200
DCR1575SY32
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
Outline type code: Y
See Package Details for further information.
(The DCR1575 is also available in a thin package, type code V.
Please contact Customer Services for more information).
Fig. 1 Package outline
For example:
DCR1575SY36
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR1575SY
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise
Symbol
Parameter
Conditions
Max.
Units
2536
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3983
A
Continuous (direct) on-state current
-
3729
A
1680
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2639
A
Continuous (direct) on-state current
-
2295
A
Conditions
Max.
Units
2010
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3155
A
Continuous (direct) on-state current
-
2850
A
1310
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2050
A
Continuous (direct) on-state current
-
1740
A
IT
Half wave resistive load
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DCR1575SY
SURGE RATINGS
ITSM
I2t
ITSM
I2t
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
35.0
kA
VR = 50% VRRM - 1/4 sine
6.13 x 106
A2s
10ms half sine; Tcase = 125oC
44.0
kA
VR = 0
9.68 x 106
A2s
Parameter
Symbol
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
dc
-
0.0095
o
Anode dc
-
0.019
o
Cathode dc
-
0.019
o
C/W
Double side
-
0.002
o
C/W
Single side
-
0.004
o
C/W
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
-55
150
o
Clamping force
45.0
55.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Units
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 50.0kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DCR1575SY
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
300
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC.
-
1000
V/µs
-
150
A/µs
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Gate source 20V, 20Ω
tr < 0.5µs.
Repetitive 50Hz
dI/dt
Non-repetitive
-
300
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
0.94
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.24
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 30V, 15Ω
Rise time 0.5µs, Tj = 25oC
-
2.5
µs
IL
Latching current
Tj = 25oC, VD = 5V
550
1000
mA
IH
Holding current
Tj = 25oC, Rg - k = ∞
150
300
mA
tq
Turn-off time
IT = 800A, tp = 1ms, Tj = 125˚C,
VRM = 50V, dIRR/dt = 20A/µs,
VDR = 67% VDRM, dVDR/dt = 20V/µs linear
1.2
-
ms
Max.
Units
VT(TO)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
300
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table, gate characteristics curve
150
W
PG(AV)
Mean gate power
10
W
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DCR1575SY
CURVES
5000
8000
Measured under pulse conditions
Tj = 125˚C
Min.
Max.
6 phase
3 phase
Halfwave
d.c.
Mean power dissipation - (W)
Instantaneous on-state current, IT - (A)
4000
6000
4000
3000
2000
2000
1000
0
0.0
0
1.0
2.0
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
3.0
0
1000
2000
3000
Mean on-state current, IT(AV) - (A)
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 1.659647
B = –0.2206499
C = 7.427997 x 10–5
D = 0.02837417
these values are valid for Tj = 125˚C for IT 500A to 7600A
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DCR1575SY
100
Conditions:
Tj = 125˚C, VR = 800V,
IT = 2000A
Snubber 1µF, 11 Ohms
Table gives pulse power PGM in Watts
Pulse Width
10000
Gate trigger voltage, VGT - (V)
Stored charge, QS - (µC)
100000
Max. QS
Min. QS
1000
µs
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
10
2W
50W
20W
10W
5W
Tj = 125˚C
1
Up
pe
im
rL
it 9
9%
t1
imi
rL
we
IT
Tj = -40˚C
T
=
25˚C
% j
Lo
QS
tp = 2ms
dI/dt
IRM
100
0.1
1.0
0.1
0.001
100
10
0.01
0.1
1.0
Gate trigger current, IGT - (A)
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
10
Fig.5 Gate characteristics
100
0.1
0.01
Double side cooled
0.001
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0001
0.001
0.01
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
0.1
1
Time - (s)
80
7.0
60
6.0
5.0
40
4.0
I2t
3.0
20
2.0
Anode side
0.019
0.020
0.0207
0.0234
10
I2t value for fusing - (A2s x 106)
Thermal impedance - (˚C/W)
Anode side cooled
Peak half sinewave on-state current - (kA)
Tcase = 125˚C
With 50% VRRM
1.0
100
0
1
10
ms
Fig.6 Transient thermal impedance - junction to case
1
5
10
0
50
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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DCR1575SY
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (One in each electrode)
Cathode tab
Cathode
Ø112.5 max
Ø73 nom
37.7
36.0
Ø1.5
Gate
Ø73 nom
Anode
Nominal weight: 1600g
Clamping force: 43kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: Y
(The DCR1575 is also available in a thin package, type code V. Please contact Customer Services for more information).
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DCR1575SY
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4401-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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