DYNEX DCR1660Y

DCR1660Y
DCR1660Y
Phase Control Thyristor
Target Information
DS5499-1.2 February 2002
FEATURES
■
Double Side Cooling
■
High Surge Capability
■
Low Inductance Internal Construction
KEY PARAMETERS
VDRM
IT(AV)
(max)
ITSM
dV/dt
dI/dt
6500V
1665A
28000A
1000V/µs
300A/µs
APPLICATIONS
■
High Power Converters
■
DC Motor Control
■
High Voltage Power Supplies
VOLTAGE RATINGS
Part and Ordering
Number
DCR1660Y65
DCR1660Y64
DCR1660Y63
DCR1660Y62
DCR1660Y61
DCR1660Y60
Repetitive Peak
Voltages
VDRM and VDRM
V
6500
6400
6300
6200
6100
6000
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: Y
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1660Y63
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DCR1660Y
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Max.
Units
1665
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2600
A
Continuous (direct) on-state current
-
2478
A
1112
A
IT
Half wave resistive load
Single Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1746
A
Continuous (direct) on-state current
-
1556
A
Max.
Units
1323
A
IT
Half wave resistive load
Tcase = 80˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2077
A
Continuous (direct) on-state current
-
1944
A
876
A
IT
Half wave resistive load
Single Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1376
A
Continuous (direct) on-state current
-
1196
A
IT
Half wave resistive load
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DCR1660Y
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Test Conditions
Max.
Units
22.0
kA
2.4 x 106
A2s
28.0
kA
3.92 x 106
A2s
10ms half sine, Tcase = 125˚C
VR = 50% VRRM - 1/4 sine
Surge (non-repetitive) on-state current
10ms half sine, Tcase = 125˚C
I2t for fusing
VR = 0
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125˚C
-
300
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125˚C
-
1000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM,
-
150
A/µs
-
300
A/µs
IRRM/IRRM
Repetitive 50Hz
Gate source 30V, 15Ω, Non-repetitive
tr ≤ 0.5µs, Tj = 125˚C
Threshold voltage
At Tvj = 125˚C
-
1.2
V
rT
On-state slope resistance
At Tvj = 125˚C
-
0.61
mΩ
tgd
Delay time
VD = 67% VDRM, gate source 30V, 15Ω
0.5
1.5
µs
1500
-
µs
VT(TO)
tr = 0.5µs, Tj = 25˚C
tq
Turn-off time
IT = 1000A, tp = 1ms, Tj =125˚C,
VR = 100V, dIRR/dt = 10A/µs,
VDR = 67% VDRM,
dVDR/dt = 25V/µs linear
IL
Latching current
Tj = 25˚C, VD = 10V
-
600
mA
IH
Holding current
Tj = 25˚C, VG–K = ∞
-
200
mA
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DCR1660Y
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Test Conditions
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Min.
Max.
Units
Double side cooled
DC
-
0.0095
˚CW
Single side cooled
Anode DC
-
0.019
˚CW
Cathode DC
-
0.019
˚CW
Double side
-
0.002
˚CW
(with mounting compound) Single side
-
0.004
˚CW
On-state (conducting)
-
135
˚C
Reverse (blocking)
-
125
˚C
Clamping force 50kN
Tstg
Storage temperature range
–55
125
˚C
Fm
Clamping force
45.0
55.0
kN
GATE TRIGGER CHARACTERISTICS AND RATINGS
Parameter
Symbol
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
300
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
10
A
PGM
Peak gate power
See table fig. 4
150
W
PG(AV)
Mean gate power
5
W
-
-
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DCR1660Y
CURVES
2500
8000
Tj = 125˚C
7000
6000
Mean power dissipation - (W)
Instantaneous on-state current, IT - (A)
2000
1500
1000
5000
4000
3000
2000
500
dc
1/2 wave
3 phase
6 phase
1000
0
1.0
1.2
1.4 1.6 1.8 2.0 2.2 2.4 2.6
Instantaneous on-state voltage, VT - (V)
2.8
Fig.2 Maximum (limit) on-state characteristics
3.0
0
0
500
1000
1500
2000
2500
3000
Mean on-state current, IT(AV) - (A)
Fig.3 Power dissipation
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DCR1660Y
10
Upper limit
Lower limit
9
Gate trigger voltage, VGT - (V)
8
7
6
Preferred gate drive area
Table gives pulse power PGM in Watts
Pulse Width
5
Tj = -40˚C
4
Tj = 25˚C
3
Tj = 125˚C
µs
100
200
500
1000
10000
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Gate trigger current, IGT - (A)
0.7
0.8
0.9
1.0
7
8
9
10
Fig.4 Gate characteristics
25
Upper Limit
Lower Limit
5W
10W
20W
50W
100W
Gate trigger voltage, VGT - (V)
20
15
10
5
0
0
1
2
3
4
5
6
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
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DCR1660Y
0.1
Max
Total stored charge, QRA3 - (µC)
Min
Conditions:
Tj = 125˚C
IT = 550A
VR = 100V
Anode side cooled
Thermal impedance - (˚C/W)
10000
1000
IT
0.01
Double side cooled
0.001
QRA3
Conduction
100
0.1
25% IRR
IRR
1.0
10
Rate of decay of on-state current, dI/dt - (A/µs)
100
0.0001
0.001
Fig.6 Stored charge
90
0.1
1
Time - (s)
Anode side
0.019
0.020
0.0207
0.0234
10
100
30
Surge current (VR = 0)
Surge current (VR = 50% VRRM)
4.0
I2t (VR = 0)
25
I2t (VR = 50% VRRM)
3.5
60
3.0
50
2.5
40
2.0
30
1.5
20
1.0
10
0.5
I2t value - (A2s x 106)
Peak half sine on-state current - (kA)
4.5
ITSM (VR = 50% VRRM)
70
0.01
Double side
0.0095
0.0105
0.0112
0.0139
Fig.7 Maximum (limit) transient thermal impedance junction to case (˚C/W)
ITSM (VR = 0)
80
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Peak half sine wave on-state current - (kA)
dI/dt
Effective thermal resistance
Junction to case ˚C/W
20
15
10
5
0
0.0
1
2
3
4
5
6
7
8
9
Pulse length, half sine wave - (ms)
Fig.8 Sub-cycle surge currents
10
0
0
10
20
30
40
Number of cycles @ 50Hz
50
60
Fig.9 Multi-cycle surge currents
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DCR1660Y
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (One in each electrode)
Cathode tab
Cathode
Ø112.5 max
Ø73 nom
37.7
36.0
Ø1.5
Gate
Ø73 nom
Anode
Nominal weight: 1600g
Clamping force: 50kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: Y
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DCR1660Y
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
CUSTOMER SERVICES
Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5499-1 Issue No. 1.2 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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