DCR504ST DCR504ST Phase Control Thyristor Advance Information Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VDRM 1400V ■ High Surge Capability IT(AV) 456A ITSM 6800A dVdt 1000V/µs dI/dt 700A/µs ■ High Mean Current ■ Fatigue Free APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control VOLTAGE RATINGS Type Number DCR504ST14 DCR504ST13 DCR504ST12 DCR504ST11 DCR504ST10 Repetitive Peak Voltages VDRM VRRM V Conditions 1400 1300 1200 1100 1000 Tvj = 0˚ to 125˚C, IDRM = IRRM = 30mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: T See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR504ST12 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DCR504ST CURRENT RATINGS Tcase = 60˚C unless stated otherwise Symbol Parameter Conditions Max. Units 456 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 717 A Continuous (direct) on-state current - 655 A 322 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 505 A Continuous (direct) on-state current - 425 A Conditions Max. Units 355 A IT Half wave resistive load CURRENT RATINGS Tcase = 80˚C unless stated otherwise Symbol Parameter Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 557 A Continuous (direct) on-state current - 495 A 248 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 390 A Continuous (direct) on-state current - 310 A IT Half wave resistive load 2/8 www.dynexsemi.com DCR504ST SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 5.5 kA VR = 50% VRRM - 1/4 sine 150x 103 A2s 10ms half sine; Tcase = 125oC 6.8 kA VR = 0 231 x 103 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.063 o Anode dc - 0.11 o Cathode dc - 0.147 o Double side - 0.02 o Single side - 0.04 o On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range –55 125 o Clamping force 4.0 5.0 kN Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 4.5kN with mounting compound C/W C/W C/W C Virtual junction temperature C C 3/8 www.dynexsemi.com DCR504ST DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 30 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. Gate open circuit. - 1000 V/µs - 350 A/µs Rate of rise of on-state current From 67% VDRM to 700A Gate source 10V, 5Ω tr ≤ 0.5µs, Tj = 125oC Repetitive 50Hz dI/dt Non-repetitive - 700 A/µs IRRM/IDRM Threshold voltage At Tvj = 125oC - 1.05 V rT On-state slope resistance At Tvj = 125oC - 0.8 mΩ tgd Delay time VD = 67% VDRM, Gate source 20V, 10Ω dIG/dt = 20A/µs, Tj = 25oC - 0.8 µs IL Latching current Tj = 25oC, VD = 10V - 200 mA IH Holding current Tj = 25oC, Rg-k = ∞ - 30 mA tq Turn-off time IT = 300A, tp = 1ms, Tj = 125˚C, VR = 50V, dIRR/dt = 20A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear. 300 - µs Max. Units VT(TO) GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 150 mA VGD Gate non-trigger voltage At 67% VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table, gate characteristics curve 100 W PG(AV) Mean gate power 5 W 4/8 www.dynexsemi.com DCR504ST CURVES 2000 1000 Measured under pulse conditions Tj = 125˚C d.c. Half wave 1500 Mean power dissipation - (W) Instantaneous on-state current, IT - (A) 800 1000 3 phase 600 6 phase 400 500 200 0 1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V) 2.5 Fig.2 Maximum (limit) on-state characteristics 0 0 200 400 600 Mean on-state current, IT(AV) - (A) 800 Fig.3 Dissipation curves VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT Where A = 0.351375 B = 0.171814 C = 0.000964 D = –0.020616 these values are valid for Tj = 125˚C for IT 500A to 1800A 5/8 www.dynexsemi.com DCR504ST 10000 IT Conditions: Tj = 125˚C VR = 50V tp = 1ms QR 0.25xIRM Gate trigger voltage, VGT - (V) Recovered charge, QR - (µC) 1.0 10 Rate of decay of on-state current, dIT/dt - (A/µs) 100 95% e Low 0.1 0.001 r lim Tj = 125˚C Tj = 25˚C Tj = -40˚C 1 VGD 100 0.1 limit W 1000 r Uppe W 5W IT = 300A 10 10 20 IRM 0W 10 W 50 tp dIT/dt 100 it 5% 0.01 Region of certain triggering 0.1 1 10 IFGM Gate trigger current, IGT - (A) Fig.4 Recovered charge Fig.5 Gate characteristics 20 Anode side cooled 0.1 Double side cooled 0.01 Conduction 0.001 0.001 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.01 0.1 Time - (s) Peak half sine wave on-state current - (kA) I2t = Î2 x t 2 15 150 10 I2t 100 5 Effective thermal resistance Junction to case ˚C/W Double side 0.063 0.073 0.093 0.112 Anode side 0.11 0.12 0.14 0.16 1 10 0 1 10 ms 1 2 3 45 10 I2t value - (A2s x 103) Thermal impedance - (˚C/W) 1.0 50 20 30 50 Cycles at 50Hz Duration Fig.6 Maximum (limit) transient thermal impedance junction to case Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase 125˚C) 6/8 www.dynexsemi.com DCR504ST PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole 3.6 x 2.0 deep (in both electrodes) 6.3 Cathode tab Cathode Ø 42 max 15.0 14.0 Ø19nom Ø1.5 Gate Ø19nom Anode Nominal weight: 55g Clamping force: 4.5kN ±10% Lead length: 205mm Lead terminal connector: M4 ring Package outine type code: T 7/8 www.dynexsemi.com DCR504ST POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4448-5 Issue No. 5.0 July 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 www.dynexsemi.com