DYNEX DFB5431

DFB54
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4
DS4219-3.0 January 2000
KEY PARAMETERS
VRRM
3500V
IF(AV)
2135A
IFSM
20000A
Qr
1500µC
trr
6.5µs
APPLICATIONS
■ Power Supplies
■ Freewheel Diode
■ Battery Chargers
■ D.C. Motor Control
■ Welding
■ Rectification
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DFB54 35
3500
DFB54 34
3400
DFB54 33
3300
DFB54 32
3200
DFB54 31
3100
DFB54 30
3000
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: DO200AD.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
2135
A
IF(RMS)
RMS value
Tcase = 65oC
3350
A
Continuous (direct) forward current
Tcase = 65oC
3060
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
1320
A
IF(RMS)
RMS value
Tcase = 65oC
2080
A
Continuous (direct) forward current
Tcase = 65oC
1810
A
IF
1/7
DFB54
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Conditions
Parameter
Max.
Units
20.0
kA
2000 x 103
A2s
16
kA
1280 x 103
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Conditions
Parameter
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.013
o
Anode dc
-
0.025
o
Cathode dc
-
0.027
o
Double side
-
0.003
o
Single side
-
0.006
o
-
150
o
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 44kN
with mounting compound
C/W
C/W
C/W
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
150
o
Clamping force
39.6
48.4
kN
Typ.
Max.
Units
-
Forward (conducting)
C
C
CHARACTERISTICS
Symbol
Conditions
VFM
Forward voltage
At 1500A peak, Tcase = 25oC
-
1.7
V
IRRM
Peak reverse current
At VRRM, Tcase = 150oC
-
100
mA
-
6.5
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
1500
µC
IRM
Reverse recovery current
Tcase = 150oC, VR = 100V
-
450
A
K
Soft factor
-
-
-
QRA1
VTO
Threshold voltage
At Tvj = 150oC
-
1.15
V
rT
Slope resistance
At Tvj = 150oC
-
0.32
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
-
-
V
VFRM
2/7
Parameter
DFB54
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
CURVES
5000
Measured under pulse conditions
Instantaneous forward current IF - (A)
4000
3000
2000
Tj = 150˚C
1000
Tj = 25˚C
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage VF - (V)
Fig.1 Maximum (limit) forward characteristics
3/7
DFB54
500
Measured under
pulse conditions
Instantaneous forward current IF - (A)
400
300
Tj = 150˚C
Tj = 25˚C
200
100
0
0.8
1.0
1.2
1.4
1.6
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
100000
QS = ∫
IF
50µs
Conditions:
0
Tj = 150˚C,
VR = 100V
Reverse recovered charge QS - (µC)
QS
tp = 1ms
dIR/dt
10000
IRR
A
B
C
D
E
1000
A: IF = 4000A
B: IF = 2000A
C: IF = 1000A
D: IF = 500A
E: IF = 200A
100
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.3 Recovered charge
4/7
1000
DFB54
10000
Conditions:
Tj = 150˚C,
Reverse recovery current IRR - (A)
VR = 100V
A
B
C
1000
D
E
100
A: IF = 2000A
B: IF = 1000A
C: IF = 500A
D: IF = 200A
10
E: IF = 100A
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.4 Typical reverse recovery current vs rate of rise of reverse current
0.1
Thermal impedance - (˚C/W)
d.c. Double side Cooled
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
Time - (s)
Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
5/7
DFB54
PACKAGE DETAILS - DO200AD
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 2.1 ± 0.1 deep
(One in each electrode)
Cathode
33.5±0.6
Ø102 max
Ø63±1
Anode
Ø63±1
Ø92 max
Nominal weight: 1100g
Clamping force: 45kN ±10%
Package outine type code: DO200AD
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
6/7
T
DFB54
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4219-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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