DYNEX DG306AE25

DG306AE25
DG306AE25
Gate Turn-off Thyristor
Replaces March 1998 version, DS4089 - 3.2
DS4099-4.0 January 2000
APPLICATIONS
KEY PARAMETERS
600A
ITCM
VDRM
2500V
225A
IT(AV)
dVD/dt
1000V/µs
300A/µs
diT/dt
■ Variable speed A.C. motor drive inverters (VSD-AC)
■ Uninterruptable Power Supplies
■ High Voltage Converters
■ Choppers
■ Welding
■ Induction Heating
■ DC/DC Converters
FEATURES
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ High Surge Current Capability
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
Outline type code: E.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
DG306AE25
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
VRRM
V
V
2500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
600
A
ITCM
Repetitive peak controllable on-state current VD = 67%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 1.0µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
225
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
350
A
1/19
DG306AE25
SURGE RATINGS
Symbol
Parameter
Conditions
Max.
Units
ITSM
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
3.5
kA
I2t
I2t for fusing
10ms half sine. Tj =125oC
61250
A2s
Critical rate of rise of on-state current
VD = 2000V, IT = 600A, Tj = 125oC, IFG > 20A,
Rise time > 1.0µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
500
V/µs
To 66% VDRM; VRG = -2V, Tj = 125oC
1000
V/µs
200
nH
diT/dt
dVD/dt
LS
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
-
GATE RATINGS
Symbol
Parameter
Conditions
This value maybe exceeded during turn-off
Min.
Max.
Units
-
16
V
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
-
50
A
PFG(AV)
Average forward gate power
-
10
W
PRGM
Peak reverse gate power
-
6
kW
diGQ/dt
Rate of rise of reverse gate current
10
50
A/µs
tON(min)
Minimum permissable on time
20
-
µs
tOFF(min)
Minimum permissable off time
40
-
µs
Min.
Max.
Units
Double side cooled
-
0.075
o
Anode side cooled
-
0.12
o
Cathode side cooled
-
0.20
o
-
0.018
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
5.0
6.0
kN
THERMAL RATINGS
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
2/19
Conditions
Clamping force 6.0kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
DG306AE25
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 600A peak, IG(ON) = 2A d.c.
-
2.75
V
IDM
Peak off-state current
VDRM = 2500V, VRG = 0V
-
50
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
0.9
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 2000V
-
515
mJ
td
Delay time
IT = 600A, dIT/dt = 300A/µs
-
1.5
µs
tr
Rise time
IFG = 20A, rise time < 1.0µs
-
3.0
µs
Turn-off energy
-
1000
mJ
tgs
Storage time
-
11.4
µs
tgf
Fall time
IT =600A, VDM = 2000V
-
1.5
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 1.0µF,
-
12.9
µs
QGQ
Turn-off gate charge
diGQ/dt = 15A/µs
-
1300
µC
QGQT
Total turn-off gate charge
-
2600
µC
IGQM
Peak reverse gate current
-
190
A
EOFF
3/19
DG306AE25
2.0
2.0
1.5
1.5
1.0
1.0
VGT
0.5
Gate trigger current IGT - (A)
Gate trigger voltage VGT - (V)
CURVES
0.5
IGT
0
-50
0
-25
75
0
25
50
100
Junction temperature Tj - (˚C)
125
Fig.1 Gate trigger voltage/curremt vs junction temperature
Instantaneous on-state current - (A)
2000
Measured under pulse
conditions
IG(ON) = 2A
Half sine wave 10ms
1500
Tj = 25˚C
Tj = 125˚C
1000
500
0
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage - (V)
Fig.2 Maximum limit on-state characteristics
4/19
5.0
6.0
DG306AE25
Maximum permissible turn-off
current ITCM - (A)
1000
Conditions:
Tj = 125˚C,
VDM = 1500V
dIGQ/dt = 15A/µs
750
500
250
0
0.5
1.0
1.5
Snubber capacitance Cs - (µF)
2.0
dc
0.075
0.050
0.025
0
0.001
0.01
0.1
Time - s
10
1.0
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
12.5
Peak half sine wave on-state
current - (kA)
Thermal impedance - ˚C/W
Fig.3 Dependence of ITCM on Cs
10.0
7.5
5.0
2.5
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
1.0
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
DG306AE25
Mean on-state power dissipation - (W)
800
700
dc
Conditions;
IG(ON) = 2A
180˚
600
120˚
500
60˚
400
30˚
300
200
100
0
0
100
200
300
Mean on-state current - (A)
350
65 70
80
90 100 110 120
Maximum permissible case
temperature - (˚C)
130
Mean on-state power dissipation- (W)
Fig.6 Steady state rectangular wave conduction loss - double side cooled
600
Conditions;
IG(ON) = 2A
500
180˚
120˚
90˚
60˚
400
30˚
300
200
100
0
0
100
200
300
Mean on-state current - (A)
80
90 100 110 120 130
Maximum permissible case
temperature - (˚C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
6/19
140
DG306AE25
Conditions:
T = 25˚C
350 j
IFGM = 20A
Cs = 1.0µF
300 Rs = 10 Ohms
dI/dt = 300A/µs
250 dIFG/dt = 20A/µs
VD = 2000V
VD = 1500V
200
VD = 1000V
150
100
50
0
0
100
200
300
400
On-state current - (A)
500
600
Fig.8 Turn-on energy vs on-state current
500
450
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
400
400
350
VD = 2000V
300
250
VD = 1500V
200
VD = 1000V
Conditions:
IT = 600A, Tj = 25˚C, Cs = 1.0µF,
Rs = 10 Ohms, dIT/dt = 300A/µs, dIFG/dt = 20A/µs
150
100
0
10
20
30
40
50
60
70
Peak forward gate current IFGM- (A)
80
Fig.9 Turn-on energy vs peak forward gate current
7/19
DG306AE25
Turn-on energy loss EON - (mJ)
600
Conditions:
T = 125˚C
500 I j
FGM = 20A
Cs = 1.0µF
400 Rs = 10 Ohms
dIT/dt = 300A/µs
300
VD = 2000V
200
VD = 1500V
VD = 1000V
100
0
0
100
200
300
400
On-state current - (A)
500
600
Fig.10 Turn-on energy vs on-state current
Conditions:
IT = 600A
Tj = 125˚C
Cs = 1.0µF
Rs = 10 Ohms
dIT/dt = 300A/µs
dIFG/dt = 20A/µs
650
Turn-on energy loss EON - (mJ)
600
550
500
450
VD = 2000V
400
350
VD = 1500V
Conditions:
I = 600A
500 T
Tj = 125˚C
Cs = 1.0µF
450 Rs = 10 Ohms
IFGM = 20A
VD = 2000V
400
350
VD = 1500V
300
250
VD = 1000V
200
150
300
VD = 1000V
250
100
50
200
0
10
20
30
40
50
60
70
Peak forward gate current IFGM- (A)
Fig.11 Turn-on energy vs peak forward gate current
8/19
Turn-on energy loss EON - (mJ)
550
700
80
0
50 100 150 200 250 300
Rate of rise of on-state current dIT/dt - (A/µs)
Fig.12 Turn-on energy vs rate of rise of on-state current
3.0
tr
2.5
2.0
td
1.5
1.0
Conditions:
Tj = 125˚C, IFGM = 20A
Cs = 1.0µF, Rs = 10 Ohms,
dIT/dt = 300A/µs, VD = 1500V
0.5
0
0
100
200
300
400
On-state current - (A)
500
600
Fig.13 Delay & rise time vs turn-on current
5.0
Turn-on delay time and rise time - (µs)
Turn-on delay time and rise time - (µs)
DG306AE25
Conditions:
IT = 600A
Tj = 125˚C
Cs = 1.0µF
Rs = 10 Ohms
dIT/dt = 300A/µs
dIFG/dt = 20A/µs
VD = 1500V
4.5
4.0
3.5
3.0
2.5
tr
2.0
1.5
1.0
td
0.5
0
0
10
20
30
40
50
60
70
Peak forward gate current IFGM- (A)
80
Fig.14 Delay time & rise time vs peak forward gate current
9/19
DG306AE25
550
Turn-off energy loss EOFF - (mJ)
Conditions:
Tj = 25˚C
500 Cs
= 1.0µF
dIGQ/dt = 15A/µs
450
VDM = 2000V
VDM = 1500V
400
VDM = 1000V
350
300
250
200
150
100
50
0
100
200
300
400
On-state current - (A)
500
600
Fig.15 Turn-off energy loss vs on-state current
575
VDM = 2000V
Turn-off energy per pulse EOFF - (mJ)
550
525
500
VDM = 1500V
475
450
425
Conditions:
IT = 600A
Tj = 25˚C
Cs = 1.0µF
400
VDM = 1000V
375
350
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dIGQ/dt- (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
10/19
DG306AE25
VDM = 2000V
Conditions:
Tj = 125˚C
900 Cs
= 1.0µF
dIGQ/dt = 15A/µs
800
VDM = 1500V
700
VDM = 1000V
600
500
400
300
200
100
0
100
200
300
400
On-state current - (A)
500
600
Fig.17 Turn-off energy vs on-state current
1100
VDM = 2000V
Turn-off energy per pulse EOFF - (mJ)
Turn-off energy loss EOFF - (mJ)
1000
1000
900
VDM = 1500V
800
700
Conditions:
IT = 600A
Tj = 125˚C
Cs = 1.0µF
VDM = 1000V
600
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dIGQ/dt- (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
DG306AE25
900
Cs = 1.0µF
Cs = 1.5µF
Turn-off energy per pulse EOFF - (mJ)
800
Conditions:
T = 125˚C
700 Vj = 1500V
DM
dIGQ/dt = 15A/µs
600
Cs = 2.0µF
500
400
300
200
100
0
0
100
200
300
500
400
On-state current - (A)
600
700
Fig.19 Turn-off energy vs on-state current
12.0
Gate storage time tgs - (µs)
Conditions:
Cs = 1.0µF
11.0 dI /dt = 15A/µs
GQ
Tj = 125˚C
10.0
Tj = 25˚C
9.0
8.0
7.0
6.0
5.0
4.0
0
100
200
300
400
On-state current - (A)
Fig.20 Gate storage time vs on-state current
12/19
500
600
800
DG306AE25
17.5
Tj = 125˚C
Conditions:
IT = 600A
Cs = 1.0µF
Gate storage time tgs - (µs)
15.0
12.5
10.0
Tj = 25˚C
7.5
5.0
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Conditions:
Cs = 1.0µF
dIGQ/dt = 15A/µs
Tj = 125˚C
Gate fall time tgf - (µs)
1.5
1.0
Tj = 25˚C
0.5
0.0
0
100
200
300
400
On-state current - (A)
500
600
Fig.22 Gate fall time vs on-state current
13/19
DG306AE25
2.0
Conditions:
IT = 600A
Cs = 1.0µF
Gate fall time tgf - (µs)
1.5
Tj = 125˚C
1.0
Tj = 25˚C
0.5
0.5
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.23 Gate fall time vs rate of rise of revese gate current
Peak reverse gate current IGQM - (A)
200
Conditions:
Cs = 1.0µF
175
dIGQ/dt = 15A/µs
Tj = 125˚C
Tj = 25˚C
150
125
100
75
50
25
0
0
100
200
300
400
On-state current - (A)
500
Fig.24 Peak reverse gate current vs on-state voltage
14/19
600
DG306AE25
300
Peak reverse gate current IGQM - (A)
Conditions:
IT = 600A
Cs = 1.0µF
Tj = 125˚C
250
Tj = 25˚C
200
150
100
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.25 Reverse gate current vs rate of rise of reverse gate current
1375
Conditions:
= 1500V
V
1250 DM
dIGQ/dt = 15A/µs
Turn-off gate charge QGQ - (µC)
1125
Tj = 125˚C
1000
Tj = 25˚C
875
750
625
500
375
250
125
0
100
200
300
400
On-state current - (A)
500
600
Fig.26 Turn-off gatecharge vs on-state voltage
15/19
DG306AE25
1600
Turn-off gate charge QGQ - (µC)
Tj = 125˚C
Conditions:
IT = 600A
Cs = 1.0µF
1400
Tj = 25˚C
1200
1000
800
0
5
10
15
20
25
30
35
40
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.27 Turn-off gate charge vs rate of rise or reverse gate current
3000
Rate of rise of off-state voltage dV/dt - (V/µs)
VD =1500V
1000
100
50
10
1
10
Gate cathode resistance RGK - (Ohms)
Fig.28 Typical rate of rise of off-state voltage vs gate cathode resistance
16/19
Anode voltage and current
DG306AE25
0.9VD
0.9IT
dVD/dt
VD
VD
IT
0.1VD
td
VDM
ITAIL
VDP
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 600A
IFG = 20A
IG(ON) = 2A d.c.
tw1(min) = 10µs
IGQM = 190A
diGQ/dt = 15A/µs
QGQ = 1300µC
VRG(min) = 2.0V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
17/19
DG306AE25
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
30˚
15˚
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode tab
Cathode
Ø42max
Ø25nom.
Gate
15
14
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 6kN ±10%
Package outine type code: E
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
GTO gate drive units
AN4571
Recommendations for clamping power semiconductors
Use of V , r on-state characteristic
AN4839
AN5001
Impoved gate drive for GTO series connections
AN5177
TO
18/19
T
DG306AE25
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DSxxxx-y Issue No. x.x January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
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19/19