DYNEX DG858DW45

DG858DW45
DG858DW45
Gate Turn-Off Thyristor
Replaces July 1999 version, DS4334-4.0
DS4334-4.1 May 2000
FEATURES
KEY PARAMETERS
ITCM
3000A
VDRM
4500V
IT(AV)
1100A
dVD/dt
750V/µs
dIT/dt
300A/µs
●
Double Side Cooling
●
High Reliability In Service
●
High Voltage Capability
●
Fault Protection Without Fuses
●
High Surge Current Capability
●
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
●
Variable speed A.C. motor drive inverters (VSD-AC).
●
Uninterruptable Power Supplies
●
High Voltage Converters.
●
Choppers.
●
Welding.
●
Induction Heating.
●
DC/DC Converters.
Package outline type code : W
See Package Details for further information.
Fig.1 Package outline
VOLTAGE RATINGS
Type Number
Repetitive Peak Off-state
Voltage
VDRM
V
Repetitive Peak Reverse
Voltage
VRRM
V
Conditions
4500
16
Tvj = 125oC, IDRM =100mA,
IRRM = 50mA
DG858DW45
CURRENT RATINGS
Symbol
ITCM
Parameter
Conditions
o
Repetitive peak controllable on-state current VD = VDRM, Tj = 125 C, diGQ/dt = 40A/µs,
Cs = 4.0µF, LS ≤ 200nH
Max.
Units
3000
A
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled, half sine 50Hz. 1100
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled, half sine 50Hz. 1720
A
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DG858DW45
SURGE RATINGS
Symbol
ITSM
I2t
diT/dt
dVD/dt
LS
Parameter
Conditions
Max.
Units
20.0
kA
2.0 x 106
A 2s
300
A/µs
To 66% VDRM; RGK ≤ 22Ω, Tj = 125oC
20
V/µs
To 66% VDRM; VRG = -2V, Tj = 125oC
750
V/µs
IT = 3000A, VD = VDRM, Tj = 125˚C,
diGQ/dt = 40A/µs, Cs = 4.0µF
200
nH
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
I2t for fusing
10ms half sine. Tj =125oC
Critical rate of rise of on-state current
VD = 3000V, IT = 3000A, Tj =125oC
IFG > 40A, Rise time < 1.0µs
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
GATE RATINGS
Symbol
Parameter
Conditions
Min.
Max.
Units
This value maybe exceeded during turn-off
-
16
V
20
100
A
Average forward gate power
-
20
W
Peak reverse gate power
-
24
kW
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PFG(AV)
PRGM
diGQ/dt
Rate of rise of reverse gate current
20
60
A/µs
tON(min)
Minimum permissable on time
50
-
µs
tOFF(min)
Minimum permissable off time
100
-
µs
Min.
Max.
Units
Double side cooled
-
0.011
o
C/W
Anode side cooled
-
0.017
o
C/W
Cathode side cooled
-
0.03
o
C/W
-
0.0021
o
C/W
THERMAL AND MECHANICAL DATA
Symbol
Rth(j-hs)
DC thermal resistance - junction to
heatsink surface
Conditions
Clamping force 40kN
With mounting compound
per contact
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
-40
125
o
C
Operating junction/storage temperature range
-40
125
o
C
Clamping force
36.0
44.0
kN
TOP/Tstg
2/7
Parameter
DG858DW45
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 3000A peak, IG(ON) = 10A d.c.
-
3.85
V
IDM
Peak off-state current
VDRM = 4500V, VRG = 2V
-
100
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1.2
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
4.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 2000V
-
4400
mJ
td
Delay time
IT = 3000A, dIT/dt = 300A/µs
-
2.0
µs
tr
Rise time
IFG = 40A, rise time < 1.0µs
-
6.0
µs
Turn-off energy
-
12500
mJ
tgs
Storage time
-
26
µs
tgf
Fall time
IT = 3000A, VDM = 4200V
-
2.5
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 4.0µF,
-
28.5
µs
QGQ
Turn-off gate charge
diGQ/dt = 40/µs
-
12500
µC
QGQT
Total turn-off gate charge
-
25000
µC
IGQM
Peak reverse gate current
-
950
A
EOFF
RELIABILITY
Conditions
DC blocking reliability
Vdc = 3500V, Tj = -40 to + 125˚C,
ambient cosmic radiation at sea level, in
open air, 100% duty cycle.
Limit Units
100
FIT
3/7
DG858DW45
CURVES
4000
Instantaneous on-state current IT - (A)
Measured under pulse
conditions.
IG(ON) = 10A
Half sine wave 10ms
3000
2000
Tj = 125˚C
1000
Tj = 25˚C
0
1.0
1.5
2.0
2.5
3.0
Instantaneous on-state voltage VTM - (V)
Figure 2. On-state characteristics
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3.5
4.0
Anode voltage and current
DG858DW45
0.9VD
0.9IT
dVD/dt
VD
VD
IT
0.1VD
td
VDM
ITAIL
VDP
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 3000A
IFG = 40A
IG(ON) = 10A d.c.
tw1(min) = 20µs
IGQM = 1200A
diGQ/dt = 40A/µs
QGQ = 12500µC
VRG(min) = 2V
VRG(max) = 18V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Figure 3. General switching waveforms
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DG858DW45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep (One in each electrode)
12˚
Auxiliary cathode connector Ø3.0
Gate connector Ø3.0
Anode
27.0
25.5
Ø120 max
Ø84.6 nom
Ø84.6 nom
72 max
Cathode
Nominal weight: 1700g
Package outline type code: W
Associated Literature/Products
Publication No.
Title/Part Number
AN4571
DS4567
DS4568
DS4150
DS4153
Application note - GDU9X-XXXXX Series GTO gate drive units.
GDU90-20721 GTO gate drive unit.
GDU90-20722 GTO gate drive unit.
DSF8045SK - Snubber diode.
DSF21545SV - Antiparallel/freewheel diode.
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DG858DW45
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
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UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020.
SALES OFFICES
Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50.
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4334-1 Issue No.4.1 May 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
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