DYNEX DGT409BCA6565

DGT409BCA
DGT409BCA
Reverse Blocking Gate Turn-off Thyristor
Replaces January 2000 version, DS4414-4.0
APPLICATIONS
The DGT409 BCA is a symmetrical GTO designed for
applications which specifically require a reverse blocking
capability, such as current source inverters (CSI). Reverse
recovery ratings and characteristics are included.
DS4414-4.1 February 2002
KEY PARAMETERS
1500A
ITCM
VDRM/VDRM
6500V
dVD/dt
1000V/µs
diT/dt
300A/µs
FEATURES
■ Reverse Blocking Capability
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ Turn-off Capability Allows Reduction In Equipment Size
And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
ORDERING INFORMATION
Order as: DGT409BCA6565
Outline type code: CA
See Package Details for further information
Fig. 1 Package outline
1/11
DGT409BCA
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tj = 115˚C unless staed otherwise
Symbol
Parameter
Conditions
Max.
Units
VDRM
Repetitive peak off-state voltage
IDM = 100mA
6500
V
VRRM
Repetitive peak reverse voltage
IRRM = 100mA
6500
V
ITCM
Repetitive peak controllable on-state current VD = 4300V, diGQ/dt = 20A/µs, CS = 2.0µF
1500
A
ITSM
Surge (non-repetitive) on-state current
10ms half sine.
3
kA
I2t for fusing
10ms half sine.
45 x 103
A2s
diT/dt
Critical rate of rise of on-state current
VD = 3000V, IT = 800A, IFG > 20A, tr > 1.5µs
300
A/µs
VD = 3000V, RGK ≤ 1.5Ω
175
V/µs
dVD/dt
Rate of rise of off-state voltage
VD = 3000V, VRG = –2V
1000
V/µs
IT = 1500A, VDM = 6000V, dIGQ/dt = 20A/µs, CS = 2µF
200
nH
I2t
LS
Peak stray inductance in snubber circuit
GATE RATINGS
Symbol
Parameter
Conditions
Min.
Max.
Units
This value may be exceeded during turn-off
-
25
V
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
-
20
70
A
Average forward gate power
-
-
10
W
Peak reverse gate power
-
-
15
kW
diGQ/dt
Rate of rise of reverse gate current
-
15
60
A/µs
tON(min)
Minimum permissable on time
-
50
-
µs
tOFF(min)
Minimum permissable off time
-
150
-
µs
-
50
mA
PFG(AV)
PRGM
IRGM
2/11
Continuous reverse gate-cathode current
VRGM = 16V, No gate cathode resistor
DGT409BCA
THERMAL RATINGS AND MECHANICAL DATA
Min.
Max.
Units
Double side cooled
-
0.046
o
C/W
Anode side cooled
-
0.073
o
C/W
Cathode side cooled
-
0.124
o
C/W
-
0.009
o
C/W
-
115
o
Operating junction/storage temperature range
-40
115
o
Clamping force
11.0
15.0
kN
Min.
Max.
Units
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
Conditions
Clamping force 12.0kN
With mounting compound
per contact
C
C
CHARACTERISTICS
Tj = 115oC unless stated otherwise
Symbol
Conditions
Parameter
VTM
On-state voltage
At 200A peak, IG(ON) = 4A d.c.
-
4
V
IDM
Peak off-state current
VDRM = 6500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
At VRRM = 6500V
-
100
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
2
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 3000V
-
2500
mJ
td
Delay time
IT = 400A, dIT/dt = 150A/µs
-
3
µs
tr
Rise time
IFG = 20A, tr < 1.5µs
-
7
µs
-
2500
mJ
EOFF
Turn-off energy
See Figs. 16 and 17
µs
IT = 800A, VDM = 3000V
See Figs. 16 and 17
µs
Gate controlled turn-off time
Snubber Cap CS = 2µF,
See Figs. 16 and 17
µs
QGQ
Turn-off gate charge
diGQ/dt = 20A/µs
QGQT
IGQM
tgs
Storage time
tgf
Fall time
tgq
-
3600
µC
Total turn-off gate charge
-
7200
µC
Peak reverse gate current
-
350
A
3/11
0.9x VD
IT
VD
dVD/dt
td
ITAIL
VDP
0.1x VD
VDM
0.9x IT
VD
Anode voltage and current
DGT409BCA
tgs
tr
tgf
tgt
tgq
0.1x IFG
IFG
VFG
tw1
IG(ON)
0.1x IGQ
VRG
Gate voltage and current
dIFG/dt
QGQ
0.5x IGQM
IGQM
V(RG)BR
Recommended gate conditions to switch off ITCM = 800A:
IFG = 30A
IG(ON) = 4A d.c.
tw1(min) = 20µs
IGQM = 270A typical
diGQ/dt = 30A/µs
QGQ = 2200µC
VRG(min) = 2V
VRG(max) = 15V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.2 General switching waveforms
4/11
DGT409BCA
IT
QS
VR
IRR
15µs
Fig.3 Reverse recovery waveforms
CURVES
1.8
IGT
1000
3.6
900
3.2
800
1.4
2.8
1.2
2.4
1.0
2.0
0.8
1.4
VGT
0.6
1.2
0.4
0.8
0.2
0.4
0
–50
–25
0
25
50
75
100
Junction temperature, Tj - (˚C)
125
0
150
Fig.4 Maximum gate trigger voltage/current vs junction
temperature
Gate trigger current, IGT - (A)
Gate trigger voltage, VGT - (V)
1.6
4.0
Instantaneous on-state current, IT - (A)
2.0
700
Tj = 25˚C
600
500
Tj = 115˚C
400
300
200
100
0
0
1
2
3
4
5
6
7
Instantaneous on-state voltage, VT - (V)
8
Fig.5 Maximum on-state characteristics
5/11
DGT409BCA
1.5
7.0
Reverse recovery energy per pulse, EOFF - (J)
Maximum permissible turn-off current, ITCM - (kA)
Conditions:
1.4 T = 115˚C,
j
1.3 VDM = 4300V,
dIGQ/dt = 20A/µs
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Snubber capacitance, CS - (µF)
5.0
4.5
4.0
IT = 150A
3.5
3.0
2.5
2.0
1.5
1.0
0
1.8 2.0
Fig.5 Maximum dependence of ITCM on CS
0
Conditions:
T = 100˚C,
750 Vc = 3500V
R
IT = 300A
3200
3000
2800
2600
IT = 150A
2200
Peak reverse recovery current, IRR - (A)
3600
2400
40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
800
Conditions:
T = 100˚C,
3800 Vc = 3500V
R
3400
20
Fig.6 Maximum reverse recovery energy vs rate of fall of
anode current
4000
Reverse recovery stored charge, QS - (µC)
IT = 300A
5.5
0.5
0
700
IT = 300A
650
600
IT = 150A
550
500
450
400
350
2000
300
0
20
40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.7 Maximum reverse recovery stored charge vs rate of fall
of anode current
6/11
Conditions:
6.5 T = 100˚C,
c
V = 3500V
6.0 R
0
20
40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.8 Maximum reverse recovery current vs rate of fall of
anode current
DGT409BCA
6000
2500
2100
IT = 300A
Turn-on energy loss, EON - (mJ)
Peak reverse recovery power, PPK - (kW)
Conditions:
T = 100˚C,
2300 Vc = 3500V
R
1900
1700
IT = 150A
1500
1300
1100
900
Conditions:
5500 Tj = 115˚C, IFG = 20A,
CS = 2µF, RS = 20Ω,
5000 dIT/dt = 150A/µs,
dIFG/dt = 30A/µs
4500
VD = 3000V
4000
3500
3000
VD = 1500V
2500
2000
1500
1000
700
500
0
500
0
20
0
40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.9 Maximum reverse recovery power vs rate of fall of
anode current
4000
8
3500 VD = 4500V
7
3000
6
2500 V = 3000V
D
2000
1500
VD = 1500V
1000
Conditions:
Tj = 115˚C, IT = 400A,
500 CS = 2µF, RS = 20Ω,
dIT/dt = 150A/µs,
dIFG/dt = 30A/µs
0
0
10
20
30
40
50
Peak forward gate current, IFGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
100
200
300 400 500 600
On-state current, IT - (A)
700
800
Fig.10 Turn-on energy vs on-state current
Switching time, - (µs)
Turn-on energy loss, EON - (mJ)
VD = 4500V
tr
5
4
3
td
2
60
Conditions:
Tj = 115˚C, IFG = 20A,
1 CS = 2µF, RS = 10Ω,
VD = 3000V, dIT/dt = 150A/s
dIFG/dt = 30A/µs
0
0
100
200
300
400
500
On-state current, IT - (A)
600
700
Fig.12 Delay time and rise time vs on-state current
7/11
DGT409BCA
5
4
Delay time -td
2
0V
00
=3
D
V
=4
500
V, C
S
,C
S
=2
µF
=2
µF
F
3000
D
Rise time -tr
3500
=
V
6
3
,C =
S
0.5µ
7
4000
Turn-off energy losses, EOFF - (mJ)
8
Switching time - (µs)
4500
Conditions:
Tj = 115˚C, IT = 400A,
CS = 2µF, RS = 20Ω,
dIT/dt = 150A/µs,
dIFG/dt = 30A/µs,
VD = 3000V
VD =
4500V
9
V,
2000
=
CS
0
50
2500
VD
F
2µ
1
1500
1000
1
Conditions:
Tj = 115˚C,RS = 20Ω,
dIGG/dt = 20A/µs, CS = 2µF
500
0
0
0
10
20
30
40
50
Peak forward gate current, IFGM - (A)
60
0
Fig.13 Switching times vs peak forward gate current
4500
200
400 600 800 1000 1200 1400 1600
On-state current, IT - (A)
Fig.14 Maximum turn-off energy vs on-state current
18
4.5
tgs
VD = 3000V
3000
2500
14
3.5
12
3.0
10
2000
VD = 1500V
1500
1000
2.5
tgf
8
2.0
6
1.5
4
Conditions:
Tj = 115˚C, RS = 10Ω,
IT = 800A, CS = 2µF
500
0
0
10
20
30
40
50
60
Rate of rise of reverse gate current, dIGQ/dt - (A/µs)
Fig.15 Turn-off energy vs rate of rise of reverse
gate current
8/11
4.0
Gate fall time, tgf - (µs)
Turn-off energy loss, EOFF - (mJ)
3500
16
Gate storage time, tgs - (µs)
VD = 4500V
4000
1.0
Conditions:
Tj = 115˚C, CS = 2µF,
2
RS = 20Ω, dIGQ/dt = 20A/µs 0.5
VDM = 3000V
0
0
0
100 200 300 400 500 600 700 800
Rate of rise of reverse gate current, dIGQ/dt - (A/µs)
Fig.16 Gate storage time and fall time vs on-state current
3.0
28
2.8
26
2.6
24
2.4
22
20
tgf
2.2
2.0
18
1.8
16
1.6
14
1.4
12
1.2
1.0
10
8
tgs
0.8
6
0.6
Conditions:
0.4
4 Tj = 115˚C, CS = 2µF,
RS = 10Ω, IT = 800A,
2
0.2
VDM = 3000V
0
0
0
10
20
30
40
50
60
70
80
Rate of rise of reverse gate current, dIGQ/dt - (A/µs)
Fig.17 Gate storage time and fall time vs rate of rise of
reverse gate current
0.1
dc
Transient thermal impedance, Zth (j-c) - (°C/kW )
30
Gate fall time, tgf - (µs)
Gate storage time, tgs - (µs)
DGT409BCA
0.01
0.001
0.0001
0.001
0.01
0.1
1
Time - (s)
10
100
Fig.18 Maximum (limit) transient thermal impedance double side cooled
9/11
DGT409BCA
PACKAGE DETAILS
For further package information, please contact the Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT
SCALE.
2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep (in both electrodes)
Auxiliary cathode
20˚
Gate
Cathode
29.5 nom
36 nom
Ø51 nom
Ø38 nom
Ø38 nom
Ø56.0 max
Ø63 nom
Anode
Nominal weight: 350g
Clamping force: 12kN ±10%
Lead length: 505mm
Package outine type code: CA
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
GTO gate drive units
AN4571
Recommendations for clamping power semiconductors
AN4839
Use of V , r on-state characteristic
AN5001
Impoved gate drive for GTO series connections
AN5177
TO
10/11
T
DGT409BCA
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer
Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
CUSTOMER SERVICES
Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS4414-4 Issue No. 4.1 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
11/11