DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters (CSI). Reverse recovery ratings and characteristics are included. DS4414-4.1 February 2002 KEY PARAMETERS 1500A ITCM VDRM/VDRM 6500V dVD/dt 1000V/µs diT/dt 300A/µs FEATURES ■ Reverse Blocking Capability ■ Double Side Cooling ■ High Reliability In Service ■ High Voltage Capability ■ Fault Protection Without Fuses ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements ORDERING INFORMATION Order as: DGT409BCA6565 Outline type code: CA See Package Details for further information Fig. 1 Package outline 1/11 DGT409BCA ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Tj = 115˚C unless staed otherwise Symbol Parameter Conditions Max. Units VDRM Repetitive peak off-state voltage IDM = 100mA 6500 V VRRM Repetitive peak reverse voltage IRRM = 100mA 6500 V ITCM Repetitive peak controllable on-state current VD = 4300V, diGQ/dt = 20A/µs, CS = 2.0µF 1500 A ITSM Surge (non-repetitive) on-state current 10ms half sine. 3 kA I2t for fusing 10ms half sine. 45 x 103 A2s diT/dt Critical rate of rise of on-state current VD = 3000V, IT = 800A, IFG > 20A, tr > 1.5µs 300 A/µs VD = 3000V, RGK ≤ 1.5Ω 175 V/µs dVD/dt Rate of rise of off-state voltage VD = 3000V, VRG = –2V 1000 V/µs IT = 1500A, VDM = 6000V, dIGQ/dt = 20A/µs, CS = 2µF 200 nH I2t LS Peak stray inductance in snubber circuit GATE RATINGS Symbol Parameter Conditions Min. Max. Units This value may be exceeded during turn-off - 25 V VRGM Peak reverse gate voltage IFGM Peak forward gate current - 20 70 A Average forward gate power - - 10 W Peak reverse gate power - - 15 kW diGQ/dt Rate of rise of reverse gate current - 15 60 A/µs tON(min) Minimum permissable on time - 50 - µs tOFF(min) Minimum permissable off time - 150 - µs - 50 mA PFG(AV) PRGM IRGM 2/11 Continuous reverse gate-cathode current VRGM = 16V, No gate cathode resistor DGT409BCA THERMAL RATINGS AND MECHANICAL DATA Min. Max. Units Double side cooled - 0.046 o C/W Anode side cooled - 0.073 o C/W Cathode side cooled - 0.124 o C/W - 0.009 o C/W - 115 o Operating junction/storage temperature range -40 115 o Clamping force 11.0 15.0 kN Min. Max. Units Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - Conditions Clamping force 12.0kN With mounting compound per contact C C CHARACTERISTICS Tj = 115oC unless stated otherwise Symbol Conditions Parameter VTM On-state voltage At 200A peak, IG(ON) = 4A d.c. - 4 V IDM Peak off-state current VDRM = 6500V, VRG = 0V - 100 mA IRRM Peak reverse current At VRRM = 6500V - 100 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 2 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 3000V - 2500 mJ td Delay time IT = 400A, dIT/dt = 150A/µs - 3 µs tr Rise time IFG = 20A, tr < 1.5µs - 7 µs - 2500 mJ EOFF Turn-off energy See Figs. 16 and 17 µs IT = 800A, VDM = 3000V See Figs. 16 and 17 µs Gate controlled turn-off time Snubber Cap CS = 2µF, See Figs. 16 and 17 µs QGQ Turn-off gate charge diGQ/dt = 20A/µs QGQT IGQM tgs Storage time tgf Fall time tgq - 3600 µC Total turn-off gate charge - 7200 µC Peak reverse gate current - 350 A 3/11 0.9x VD IT VD dVD/dt td ITAIL VDP 0.1x VD VDM 0.9x IT VD Anode voltage and current DGT409BCA tgs tr tgf tgt tgq 0.1x IFG IFG VFG tw1 IG(ON) 0.1x IGQ VRG Gate voltage and current dIFG/dt QGQ 0.5x IGQM IGQM V(RG)BR Recommended gate conditions to switch off ITCM = 800A: IFG = 30A IG(ON) = 4A d.c. tw1(min) = 20µs IGQM = 270A typical diGQ/dt = 30A/µs QGQ = 2200µC VRG(min) = 2V VRG(max) = 15V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.2 General switching waveforms 4/11 DGT409BCA IT QS VR IRR 15µs Fig.3 Reverse recovery waveforms CURVES 1.8 IGT 1000 3.6 900 3.2 800 1.4 2.8 1.2 2.4 1.0 2.0 0.8 1.4 VGT 0.6 1.2 0.4 0.8 0.2 0.4 0 –50 –25 0 25 50 75 100 Junction temperature, Tj - (˚C) 125 0 150 Fig.4 Maximum gate trigger voltage/current vs junction temperature Gate trigger current, IGT - (A) Gate trigger voltage, VGT - (V) 1.6 4.0 Instantaneous on-state current, IT - (A) 2.0 700 Tj = 25˚C 600 500 Tj = 115˚C 400 300 200 100 0 0 1 2 3 4 5 6 7 Instantaneous on-state voltage, VT - (V) 8 Fig.5 Maximum on-state characteristics 5/11 DGT409BCA 1.5 7.0 Reverse recovery energy per pulse, EOFF - (J) Maximum permissible turn-off current, ITCM - (kA) Conditions: 1.4 T = 115˚C, j 1.3 VDM = 4300V, dIGQ/dt = 20A/µs 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Snubber capacitance, CS - (µF) 5.0 4.5 4.0 IT = 150A 3.5 3.0 2.5 2.0 1.5 1.0 0 1.8 2.0 Fig.5 Maximum dependence of ITCM on CS 0 Conditions: T = 100˚C, 750 Vc = 3500V R IT = 300A 3200 3000 2800 2600 IT = 150A 2200 Peak reverse recovery current, IRR - (A) 3600 2400 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/µs) 800 Conditions: T = 100˚C, 3800 Vc = 3500V R 3400 20 Fig.6 Maximum reverse recovery energy vs rate of fall of anode current 4000 Reverse recovery stored charge, QS - (µC) IT = 300A 5.5 0.5 0 700 IT = 300A 650 600 IT = 150A 550 500 450 400 350 2000 300 0 20 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/µs) Fig.7 Maximum reverse recovery stored charge vs rate of fall of anode current 6/11 Conditions: 6.5 T = 100˚C, c V = 3500V 6.0 R 0 20 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/µs) Fig.8 Maximum reverse recovery current vs rate of fall of anode current DGT409BCA 6000 2500 2100 IT = 300A Turn-on energy loss, EON - (mJ) Peak reverse recovery power, PPK - (kW) Conditions: T = 100˚C, 2300 Vc = 3500V R 1900 1700 IT = 150A 1500 1300 1100 900 Conditions: 5500 Tj = 115˚C, IFG = 20A, CS = 2µF, RS = 20Ω, 5000 dIT/dt = 150A/µs, dIFG/dt = 30A/µs 4500 VD = 3000V 4000 3500 3000 VD = 1500V 2500 2000 1500 1000 700 500 0 500 0 20 0 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/µs) Fig.9 Maximum reverse recovery power vs rate of fall of anode current 4000 8 3500 VD = 4500V 7 3000 6 2500 V = 3000V D 2000 1500 VD = 1500V 1000 Conditions: Tj = 115˚C, IT = 400A, 500 CS = 2µF, RS = 20Ω, dIT/dt = 150A/µs, dIFG/dt = 30A/µs 0 0 10 20 30 40 50 Peak forward gate current, IFGM - (A) Fig.11 Turn-on energy vs peak forward gate current 100 200 300 400 500 600 On-state current, IT - (A) 700 800 Fig.10 Turn-on energy vs on-state current Switching time, - (µs) Turn-on energy loss, EON - (mJ) VD = 4500V tr 5 4 3 td 2 60 Conditions: Tj = 115˚C, IFG = 20A, 1 CS = 2µF, RS = 10Ω, VD = 3000V, dIT/dt = 150A/s dIFG/dt = 30A/µs 0 0 100 200 300 400 500 On-state current, IT - (A) 600 700 Fig.12 Delay time and rise time vs on-state current 7/11 DGT409BCA 5 4 Delay time -td 2 0V 00 =3 D V =4 500 V, C S ,C S =2 µF =2 µF F 3000 D Rise time -tr 3500 = V 6 3 ,C = S 0.5µ 7 4000 Turn-off energy losses, EOFF - (mJ) 8 Switching time - (µs) 4500 Conditions: Tj = 115˚C, IT = 400A, CS = 2µF, RS = 20Ω, dIT/dt = 150A/µs, dIFG/dt = 30A/µs, VD = 3000V VD = 4500V 9 V, 2000 = CS 0 50 2500 VD F 2µ 1 1500 1000 1 Conditions: Tj = 115˚C,RS = 20Ω, dIGG/dt = 20A/µs, CS = 2µF 500 0 0 0 10 20 30 40 50 Peak forward gate current, IFGM - (A) 60 0 Fig.13 Switching times vs peak forward gate current 4500 200 400 600 800 1000 1200 1400 1600 On-state current, IT - (A) Fig.14 Maximum turn-off energy vs on-state current 18 4.5 tgs VD = 3000V 3000 2500 14 3.5 12 3.0 10 2000 VD = 1500V 1500 1000 2.5 tgf 8 2.0 6 1.5 4 Conditions: Tj = 115˚C, RS = 10Ω, IT = 800A, CS = 2µF 500 0 0 10 20 30 40 50 60 Rate of rise of reverse gate current, dIGQ/dt - (A/µs) Fig.15 Turn-off energy vs rate of rise of reverse gate current 8/11 4.0 Gate fall time, tgf - (µs) Turn-off energy loss, EOFF - (mJ) 3500 16 Gate storage time, tgs - (µs) VD = 4500V 4000 1.0 Conditions: Tj = 115˚C, CS = 2µF, 2 RS = 20Ω, dIGQ/dt = 20A/µs 0.5 VDM = 3000V 0 0 0 100 200 300 400 500 600 700 800 Rate of rise of reverse gate current, dIGQ/dt - (A/µs) Fig.16 Gate storage time and fall time vs on-state current 3.0 28 2.8 26 2.6 24 2.4 22 20 tgf 2.2 2.0 18 1.8 16 1.6 14 1.4 12 1.2 1.0 10 8 tgs 0.8 6 0.6 Conditions: 0.4 4 Tj = 115˚C, CS = 2µF, RS = 10Ω, IT = 800A, 2 0.2 VDM = 3000V 0 0 0 10 20 30 40 50 60 70 80 Rate of rise of reverse gate current, dIGQ/dt - (A/µs) Fig.17 Gate storage time and fall time vs rate of rise of reverse gate current 0.1 dc Transient thermal impedance, Zth (j-c) - (°C/kW ) 30 Gate fall time, tgf - (µs) Gate storage time, tgs - (µs) DGT409BCA 0.01 0.001 0.0001 0.001 0.01 0.1 1 Time - (s) 10 100 Fig.18 Maximum (limit) transient thermal impedance double side cooled 9/11 DGT409BCA PACKAGE DETAILS For further package information, please contact the Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep (in both electrodes) Auxiliary cathode 20˚ Gate Cathode 29.5 nom 36 nom Ø51 nom Ø38 nom Ø38 nom Ø56.0 max Ø63 nom Anode Nominal weight: 350g Clamping force: 12kN ±10% Lead length: 505mm Package outine type code: CA ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of V , r on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177 TO 10/11 T DGT409BCA POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICES Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS4414-4 Issue No. 4.1 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 11/11