DYNEX DIM400GDM33-A000

DIM400GDM33-A000
DIM400GDM33-A000
Dual Switch IGBT Module
Preliminary Information
Replaces September 2001, version DS5495-1.2
FEATURES
■
10µs Short Circuit Withstand
■
High Thermal Cycling Capability
■
Non Punch Through Silicon
■
Isolated MMC Base with AlN Substrates
DS5495-1.2 September 2001
KEY PARAMETERS
VCES
VCE(sat)
(typ)
(max)
IC
IC(PK)
(max)
APPLICATIONS
■
External connection
High Reliability Inverters
E1
E1
■
Motor Controllers
■
Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM400GDM33-A000 is a dual switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400GDM33-A000
Note: When ordering, please use the whole part number.
3300V
3.2V
400A
800A
C2
C2
G1
G2
C1
E2
E2
C1
Fig. 1 Dual switch circuit diagram
C1
E1
C1
E1
E2
C2
G1
C2
G2
E2
E2 - Aux Emitter
C1 - Aux Collector
Outline type code: G
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/10
DIM400GDM33-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
3300
V
±20
V
Continuous collector current
Tcase = 80˚C
400
A
IC(PK)
Peak collector current
1ms, Tcase = 115˚C
800
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
4.8
kW
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
80
kA2s
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
6000
V
QPD
Partial discharge - per module
IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS
10
pC
IC
I2t
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400GDM33-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Test Conditions
Parameter
Symbol
Rth(j-c)
AlN
AlSiC
33mm
20mm
175
Thermal resistance - transistor (per arm)
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
26
˚C/kW
-
-
52
˚C/kW
-
-
6
˚C/kW
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M4
-
-
2
Nm
Electrical connections - M8
-
-
10
Nm
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/10
DIM400GDM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
2
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
30
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
4
µA
VGE(TH)
Gate threshold voltage
IC = 40mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 400A
-
3.2
-
V
VGE = 15V, IC = 400A, , Tcase = 125˚C
-
4.0
-
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
400
-
A
IFM
Diode maximum forward current
tp = 1ms
-
800
-
A
VF
Diode forward voltage
IF = 400A
-
2.5
-
V
IF = 400A, Tcase = 125˚C
-
2.5
-
V
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
90
-
nF
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
5
-
nF
LM
Module inductance - per arm
-
-
25
-
nH
Internal transistor resistance - per arm
-
-
0.26
-
mΩ
RINT
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 2500V,
I1
-
2600
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
-
2200
-
A
IEC 60747-9
Note:
L* is the circuit inductance + LM
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400GDM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 400A
-
1450
-
ns
Fall time
VGE = ±15V
-
200
-
ns
EOFF
Turn-off energy loss
VCE = 1800V
-
500
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
500
-
ns
Rise time
Cge = 68nF
-
300
-
ns
EON
Turn-on energy loss
L ~ 100nH
-
650
-
mJ
Qg
Gate charge
-
12
-
µC
Qrr
Diode reverse recovery charge
IF = 400A, VR = 1800V,
-
280
-
µC
Irr
Diode reverse recovery current
dIF/dt = 2800A/µs
-
400
-
A
Erec
Diode reverse recovery energy
-
300
-
mJ
Min.
Typ.
Max.
Units
IC = 400A
-
1700
-
ns
Fall time
VGE = ±15V
-
250
-
ns
EOFF
Turn-off energy loss
VCE = 1800V
-
600
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
550
-
ns
Rise time
Cge = 68nF
-
300
-
ns
EON
Turn-on energy loss
L ~ 100nH
-
850
-
mJ
Qrr
Diode reverse recovery charge
IF = 400A, VR = 1800V,
-
450
-
µC
Irr
Diode reverse recovery current
dIF/dt = 2000A/µs
-
430
-
A
Erec
Diode reverse recovery energy
-
550
-
mJ
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Test Conditions
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/10
DIM400GDM33-A000
TYPICAL CHARACTERISTICS
800
800
Common emitter.
Tcase = 125˚C
700
700
600
600
Collector current, IC - (A)
Collector current, IC - (A)
Common emitter.
Tcase = 25˚C
500
400
300
400
300
200
200
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
100
0
0
500
1
2
3
4
Collector-emitter voltage, Vce - (V)
0
1
6
5
Fig. 3 Typical output characteristics
2
3
4
5
6
Collector-emitter voltage, Vce - (V)
7
8
Fig. 4 Typical output characteristics
900
1400
Conditions:
Tcase = 125˚C
800 Rg = 4.7 Ohms
Vcc = 1800V
Cge = 68nF
700
Conditions:
Tcase = 125˚C
IC = 400A
1200 Vcc = 1800V
Cge = 68nF
Switching energy, Esw - (mJ)
Switching energy, Esw - (mJ)
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
100
600
500
400
300
1000
800
600
400
200
Eon
Eoff
Erec
100
0
0
100
200
300
400
500
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
6/10
200
0
3
Eon
Eoff
Erec
4
5
6
7
8
9
10
Gate resistance, Rg - (Ohms)
11
12
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400GDM33-A000
800
900
Tj = 25˚C
Tj = 125˚C
800
700
Collector current, IC (A)
Forward current, IF - (A)
Chip
700
600
500
400
300
600
Module
500
400
300
200
200
100 Tcase = 125˚C
Vge = ±15V
Rg(min) = 4.7Ω
0
0
500
1000
1500
2000
2500
3000
Collector emitter voltage, Vce - (V)
100
0
0
0.5
1
1.5
2
2.5
3
Forward voltage, VF - (V)
3.5
4
Fig. 7 Diode typical forward characteristics
3500
Fig. 8 Reverse bias safe operating area
1000
700
tp
600
=
0µ
s
s
m
Collector current, IC - (A)
1
Reverse recovery current, Irr - (A)
10
=
400
10
300
µs
=
50
tp
tp
100
500
Ic(max) DC
200
1
100
0
0
500
1000
1500
2000
2500
Reverse voltage, VR - (V)
3000
Fig. 9 Diode reverse bias safe operating area
3500
0
1
Tvj = 125˚C, Tc = 80˚C
10
100
1000
Collector emitter voltage, Vce - (V)
Fig. 10 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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10000
7/10
DIM400GDM33-A000
700
100
600
Transistor
DC collector current, IC - (A)
Transient thermal impedance, Zth (j-c) - (°C/kW )
Diode
10
500
400
300
1
200
IGBT
Diode
0.1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
0.7494
0.0876
1.4772
0.0843
2
3.9034
3.7713
7.823
3.7205
0.1
Pulse width, tp - (s)
3
5.5554
33.5693
11.1256
33.2138
1
Fig. 11 Transient thermal impedance
8/10
4
16.8032
236.8023
33.6616
236.5275
10
100
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
140
160
Fig. 12 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400GDM33-A000
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
E2 - Aux Emitter
C1 - Aux Collector
C1
E1
C1
E1
E2
C2
G1
130
C2
G2
E2
38
140
160
Nominal weight: 1000g
Module outline type code: G
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/10
DIM400GDM33-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5495-2 Issue No. 2.0 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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