DYNEX DIM600DCM17-A000

DIM600DCM17-A000
DIM600DCM17-A000
IGBT Chopper Module
Replaces September 2001, version DS5491-1.1
FEATURES
■
10µs Short Circuit Withstand
■
High Thermal Cycling Capability
■
Non Punch Through Silicon
■
Isolated MMC Base with AlN Substrates
DS5491-2.0 March 2002
KEY PARAMETERS
VCES
(typ)
VCE(sat) *
(max)
IC
(max)
IC(PK)
1700V
2.7V
600A
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
■
Choppers
■
Motor Controllers
■
Traction Drives
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM600DCM17-A000 is a 1700V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for traction drives and other
applications requiring high thermal cycling capability.
5(E1)
1(E1)
2(C2)
3(C1)
4(E2)
6(G1)
7(C1)
Fig. 1 Chopper circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600DCM17-A000
Note: When ordering, please use the whole part number.
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/11
DIM600DCM17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1700
V
±20
V
Continuous collector current
Tcase = 70˚C
600
A
IC(PK)
Peak collector current
1ms, Tcase = 105˚C
1200
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
4630
W
Diode I2t value (IGBT arm)
VR = 0, tp = 10ms, Tvj = 125˚C
120
kA2s
120
kA2s
4000
V
10
pC
IC
I2t
Diode I2t value (Diode arm)
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
QPD
Partial discharge - per module
IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS
2/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Test Conditions
Parameter
Symbol
Rth(j-c)
AlN
AlSiC
20mm
10mm
175
Thermal resistance - transistor (per arm)
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
27
˚C/kW
junction to case
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Thermal resistance - diode (IGBT arm)
Continuous dissipation -
-
-
40
˚C/kW
Thermal resistance - diode (Diode arm)
junction to case
-
-
40
˚C/kW
Thermal resistance - case to heatsink
Mounting torque 5Nm
-
-
8
˚C/kW
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M4
-
-
2
Nm
Electrical connections - M8
-
-
10
Nm
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/11
DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
20
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
4
µA
VGE(TH)
Gate threshold voltage
IC = 30mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 600A
-
2.7
3.2
V
VGE = 15V, IC = 600A, , Tcase = 125˚C
-
3.4
4.0
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
-
600
A
IFM
Diode maximum forward current
tp = 1ms
-
-
1200
A
VF†
Diode forward voltage (IGBT arm)
IF = 600A
-
2.0
2.3
V
-
2.0
2.3
V
-
2.1
2.4
V
-
2.1
2.4
V
Diode forward voltage (Diode arm)
Diode forward voltage (IGBT arm)
IF = 600A, Tcase = 125˚C
Diode forward voltage (Diode arm)
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
45
-
nF
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
3.8
-
nF
LM
Module inductance - per arm
-
-
20
-
nH
Internal transistor resistance - per arm
-
-
0.27
-
mΩ
RINT
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 1000V,
I1
2780
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
2400
-
A
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + LM
4/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 600A
-
1200
-
ns
Fall time
VGE = ±15V
-
140
-
ns
EOFF
Turn-off energy loss
VCE = 900V
-
190
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
250
-
ns
L ~ 100nH
-
250
-
ns
Symbol
td(off)
tf
tr
Test Conditions
Parameter
Turn-off delay time
Rise time
EON
Turn-on energy loss
-
220
-
mJ
Qg
Gate charge
-
6.8
-
µC
Qrr
Diode reverse recovery charge
Irr
Erec
Diode reverse recovery current
Diode reverse recovery energy
Diode arm
IF = 600A,
-
370
-
µC
IGBT arm
VR = 50% VCES,
-
150
-
µC
Diode arm
dIF/dt = 3000A/µs
-
800
-
A
IGBT arm
-
350
-
A
Diode arm
-
250
-
mJ
IGBT arm
-
100
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/11
DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 125˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 600A
-
1500
-
ns
Fall time
VGE = ±15V
-
170
-
ns
EOFF
Turn-off energy loss
VCE = 900V
-
270
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
400
-
ns
L ~ 100nH
-
250
-
ns
-
350
-
mJ
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Erec
6/11
Test Conditions
Diode reverse recovery current
Diode reverse recovery energy
Diode arm
IF = 600A,
-
650
-
µC
IGBT arm
VR = 50% VCES,
-
250
-
µC
Diode arm
dIF/dt = 3000A/µs
-
900
-
A
IGBT arm
-
400
-
A
Diode arm
-
380
-
mJ
IGBT arm
-
150
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
TYPICAL CHARACTERISTICS
1200
1200
Common emitter.
1100 Tcase = 25˚C
Common emitter.
1100 Tcase = 125˚C
Vce is measured at power busbars
Vce is measured at power busbars
1000 and not the auxiliary terminals
1000 and not the auxiliary terminals
900
Collector current, IC - (A)
Collector current, IC - (A)
900
800
700
600
500
400
300
700
600
500
400
300
VGE = 20V
15V
12V
10V
200
100
0
0
800
0.5
1
1.5
2
2.5
3
3.5
4
VGE = 20V
15V
12V
10V
200
100
4.5
0
5
0
0.5
1
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
1600
Conditions:
Vce = 900V
350 Tc = 125°C
Rg = 3.3Ω
6
Tj = 25˚C
Tj = 125˚C
1400 VF is measured at power busbars
and not the auxiliary terminals
1200
300
Foward current, IF - (A)
Switching energy, Esw - (mJ)
5.5
Fig. 4 Typical output characteristics
400
1000
250
200
150
800
600
400
100
Eoff
Eon
Erec
50
0
0
1.5 2 2.5 3 3.5 4 4.5 5
Collector-emitter voltage, Vce - (V)
100
200
300
400
500
600
Collector current, IC - (A)
700
200
800
Fig. 5 Typical switching energy vs collector current
0
0
0.5
2.0
1.0
1.5
2.5
Foward voltage, VF - (V)
3.5
Fig. 6 Diode typical forward characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3.0
7/11
DIM600DCM17-A000
2000
800
1800
700
Reverse recovery current, Irr - (A)
Collector current, IC - (A)
1600
1400
1200
Chip
1000
800
Module
600
600
500
400
300
200
400
100
Tcase = 125˚C
200 Vge = ±15V
Rg(min) = 2.2Ω
0
1200
0
400
800
1600
Collector-emitter voltage, Vce - (V)
Tj = 125˚C
0
0
2000
Fig. 7 Reverse bias safe operating area
400
1200
800
Reverse voltage, VR - (V)
1600
2000
Fig. 8 Diode reverse bias safe operating area
Tvj = 125˚C, Tc = 70˚C
Collector current, IC - (A)
1000
100
IC(max) DC
tp = 50µs
tp = 100µs
tp = 1 ms
10
Transient thermal impedance, Zth (j-c) - (°C/kW )
100
10000
Freewheel and
Antiparallel Diode
Transistor
10
1
0.001
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig. 9 Forward bias safe operating area
8/11
10000
0.01
0.1
Pulse width, tp - (s)
1
10
1
2
3
4
Ri (˚C/KW) 0.65865 5.7785 6.2197 15.3534
τi (ms)
0.045 2.8869 21.7141 152.6381
Freewheel and Ri (˚C/KW) 1.5612 5.7426 6.999 25.6068
Antiparallel Diode τi (ms)
0.0063516 1.4746 13.9664 111.7517
IGBT
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
1400
DC collector current, IC - (A)
1200
1000
800
600
400
200
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
140
160
Fig. 11 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/11
DIM600DCM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1050g
Module outine type code: D
10/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
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North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5491-2 Issue No. 2.0 March 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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11/11