DYNEX DIM800DDM17-A000

DIM800DDM17-A000
DIM800DDM17-A000
Dual Switch IGBT Module
Replaces May 2001, version DS5433-2.0
FEATURES
■
10µs Short Circuit Withstand
■
High Thermal Cycling Capability
■
Non Punch Through Silicon
■
Isolated MMC Base with AlN Substrates
DS5433-3.0 March 2002
KEY PARAMETERS
VCES
(typ)
VCE(sat) *
(max)
IC
(max)
IC(PK)
1700V
2.7V
800A
1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
■
Inverters
■
Motor Controllers
■
Traction Drives
The Powerline range of modules includes half bridge, dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 2400A.
The DIM800DDM17-A000 is a dual switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised for traction drives and other applications requiring high
thermal cycling capability.
1(E1)
5(E1)
2(C2)
12(C2)
6(G1)
11(G2)
7(C1)
10(E2)
3(C1)
4(E2)
Fig. 1 Dual switch circuit diagram
5
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
6
3
1
4
2
7
8
ORDERING INFORMATION
Order As:
DIM800DDM17-A000
9
12
11
Note: When ordering, please use the complete part number.
10
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/10
DIM800DDM17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1700
V
±20
V
Continuous collector current
Tcase = 75˚C
800
A
IC(PK)
Peak collector current
1ms, Tcase = 105˚C
1600
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
6940
W
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
120
kA2s
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4000
V
QPD
Partial discharge - per module
IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS
10
PC
IC
I2t
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DDM17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Test Conditions
Parameter
Symbol
Rth(j-c)
AlN
AlSiC
20mm
10mm
175
Thermal resistance - transistor (per arm)
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
18
˚C/kW
-
-
40
˚C/kW
-
-
8
˚C/kW
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M4
-
-
2
Nm
Electrical connections - M8
-
-
10
Nm
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/10
DIM800DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
25
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
4
µA
VGE(TH)
Gate threshold voltage
IC = 40mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 800A
-
2.7
3.2
V
VGE = 15V, IC = 800A, , Tcase = 125˚C
-
3.4
4.0
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
-
800
A
IFM
Diode maximum forward current
tp = 1ms
-
-
1600
A
VF†
Diode forward voltage
IF = 800A
-
2.2
2.5
V
IF = 800A, Tcase = 125˚C
-
2.3
2.6
V
VCE = 25V, VGE = 0V, f = 1MHz
-
60
-
nF
Cies
Input capacitance
LM
Module inductance - per arm
-
-
20
-
nH
Internal transistor resistance - per arm
-
-
0.27
-
mΩ
RINT
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 1000V,
I1
-
3700
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
-
3200
-
A
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + LM
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 800A
-
1250
-
ns
Fall time
VGE = ±15V
-
170
-
ns
EOFF
Turn-off energy loss
VCE = 900V
-
230
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
250
-
ns
L ~ 100nH
-
250
-
ns
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
-
220
-
mJ
Qg
Gate charge
-
9.0
-
µC
Qrr
Diode reverse recovery charge
IF = 800A, VR = 900V,
-
200
-
µC
Irr
Diode reverse current
dIF/dt = 4000A/µs
-
460
-
A
-
130
-
mJ
Min.
Typ.
Max.
Units
IC = 800A
-
1500
-
ns
Fall time
VGE = ±15V
-
200
-
ns
EOFF
Turn-off energy loss
VCE = 900V
-
360
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
400
-
ns
L ~ 100nH
-
250
-
ns
-
340
-
mJ
IF = 800A, VR = 900V,
-
330
-
µC
dIF/dt = 4000A/µs
-
530
-
A
-
200
-
mJ
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
Diode reverse recovery energy
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/10
DIM800DDM17-A000
TYPICAL CHARACTERISTICS
1800
1800
Common emitter
Tcase = 25˚C
1600
1600 V is measured at power busbars
ce
and not the auxiliary terminals
Collector current, Ic - (A)
Collector current, Ic - (A)
1200
1200
1000
1000
800
600
800
600
400
400
VGE = 20V
15V
12V
10V
200
0
0.5
1
1.5 2
2.5 3
3.5 4
Collector-emitter voltage, Vce - (V)
4.5
0
0
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
400
800
Conditions:
Vce = 900V
350 Tc = 125°C
Rg = 2.2Ω
Conditions:
Vce = 900V
IC = 800A
Tc = 125°C
300
600
Switching energy - (mJ)
Switching energy - (mJ)
VGE = 20V
15V
12V
10V
200
Fig. 3 Typical output characteristics
250
200
150
100
400
200
Eon
Eoff
Erec
50
0
Eoff
Eon
Erec
0
0
200
400
600
Collector current, IC - (A)
800
1000
Fig. 5 Typical switching energy vs collector current
6/10
Vce is measured at power busbars
and not the auxiliary terminals
1400
1400
0
Common emitter
Tcase = 125˚C
0
2
4
6
8
Gate Resistance, Rg - (Ohms)
10
12
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DDM17-A000
1600
Tj = 25˚C
Tj = 125˚C
2000
1400 VF is measured at power busbars
1800
1200
1600
Collector current, IC - (A)
Foward current, IF - (A)
and not the auxiliary terminals
1000
1400
Chip
1200
800
1000
600
400
Module
800
600
400
200
0
0
2.0
1.0
1.5
2.5
Foward voltage, VF - (V)
0.5
3.0
Tcase = 125˚C
200 Vge = ±15V
Rg(min) = 2.2Ω
0
1200
0
400
800
1600
Collector-emitter voltage, Vce - (V)
3.5
Fig. 7 Diode typical forward characteristics
2000
Fig. 8 Reverse bias safe operating area
10000
800
Tvj = 125˚C, Tc = 75˚C
700
1000
Collector current, IC - (A)
Reverse current, IR - (A)
600
500
400
300
100
IC(max) DC
tp = 50µs
tp = 100µs
tp = 1 ms
10
200
100
Tj = 125˚C
0
0
400
1
1200
800
Reverse voltage, VR - (V)
1600
Fig. 9 Diode reverse bias safe operating area
2000
1
10
100
10000
Fig. 10 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1000
Collector-emitter voltage, Vce - (V)
7/10
DIM800DDM17-A000
1400
1200
Diode
DC collector current, IC - (A)
Transient thermal impedance, Zth (j-c) - (°C/kW )
100
1000
Transistor
10
IGBT
Diode
1
0.001
1
Ri (˚C/KW) 0.4391
τi (ms)
0.045
Ri (˚C/KW) 1.5612
τi (ms)
0.0063516
0.01
2
3
4
3.1937 4.1465 10.2356
2.8869 21.7141 152.6381
5.7426 6.999 25.6068
1.4746 13.9664 111.7517
0.1
Pulse width, tp - (s)
1
Fig. 11 Transient thermal impedance
8/10
10
800
600
400
200
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
140
160
Fig. 12 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DDM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
62
62
13
15
15
5
1
4
2
11.85
3
57
24
65
6
16
7
9
13
26
12
43.3
57
65
18
8
11
10
14 11.5
20
35
6x Ø7
4x M8
38
28
31.5
6x M4
5
140
Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3
Auxiliary and Gate pin plastic hole depth (M4) = 9± 0.3
Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1
Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1
Nominal weight: 1050g
Module outline type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/10
DIM800DDM17-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5433-3 Issue No. 3.0 March 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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