DYNEX DK13

DK13..FW
DK13..FW
Fast Switching Thyristor
Replaces January 2000 version, DS4267-3.0
DS4267-4.0 July 2001
FEATURES
KEY PARAMETERS
■ Low Switching Losses At High Frequency.
VDRM
800V
■ Fully Characterised For Operation Up To 20kHz.
IT(RMS)
110A
ITSM
1200A
dVdt
200V/µs
dI/dt
200A/µs
tq
10µs
APPLICATIONS
■ High Power Inverters And Choppers.
■ UPS.
■ AC Motor Drives.
■ Induction Heating.
■ Cycloconverters.
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VDRM VRRM
V
DK13 08FW K or M
DK13 06FW K or M
800
600
Conditions
VRSM = VRRM + 100V
IDRM = IRRM = 15mA
at VRRM or VDRM & Tvj
Outline type code: TO94
See Package Details for further information.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Fig. 1 Package outline
Add K to type number for 1/2" 20 UNF thread, e.g. DK13 06FWK
or
Add M to type number for M12 thread, e.g. DK13 06FM.
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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CURRENT RATINGS
Symbol
Parameter
Conditions
IT(AV)
Mean on-state current
Half wave resistive load, Tcase = 80oC
IT(RMS)
RMS value
Tcase = 80oC
Max.
Units
70
A
110
A
SURGE RATINGS
Parameter
Symbol
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
Conditions
Max.
Units
tp = 10ms half sine; Tcase = 125oC
1.2
kA
VR = 0% VRRM - 1/4 sine
7.2 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Parameter
Symbol
Min.
Max.
Units
Rth(j-c)
Thermal resistance - junction to case
dc
-
0.24
o
Rth(c-h)
Thermal resistance - case to heatsink
Mounting torque 15.0Nm
with mounting compound
-
0.08
o
On-state (conducting)
-
125
o
Reverse (blocking)
-
125
o
Storage temperature range
-40
150
o
Mounting torque
12.0
15.0
Tvj
Tstg
-
C/W
C/W
C
Virtual junction temperature
C
C
Nm
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
QRA1
tp = 1ms
dIR/dt
0.5x IRR
IRR
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DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Max.
Units
Maximum on-state voltage
At 300A peak, Tcase = 25oC
-
2.35
V
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
15
mA
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% VDRM Tj = 125oC, Gate open circuit
-
200
V/µs
Gate source 20V, 20Ω
Repetitive 50Hz
-
500
A/µs
dI/dt
Rate of rise of on-state current
tr < 0.5µs, Tj = 125˚C
Non-repetitive
-
800
A/µs
VTM
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
1.65
V
rT
On-state slope resistance
At Tvj = 125oC
-
3.5
mΩ
tgd
Delay time
-
3
µs
Total turn-on time
Tj = 25˚C, IT = 50A,
VD = 300V, IG = 1A,
dI/dt =50A/µs, dIG/dt = 1A/µs
-
1.5
µs
Holding current
Tj = 25oC, ITM = 1A, VD = 12V
60*
-
mA
-
10
µs
Turn-off time
Tj = 125˚C, IT = 100A, VR = 50V,
tq code: W
dV/dt = 200V/µs (Linear to 60% VDRM),
dIR/dt = 30A/µs, Gate open circuit
Typ.
Max.
Units
VT(TO)
t(ON)TOT
IH
tq
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 12V, Tcase = 25oC, RL = 6Ω
-
3.0
V
IGT
Gate trigger current
VDRM = 12V, Tcase = 25oC, RL = 6Ω
-
200
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC, RL = 1kΩ
-
0.2
V
-
5.0
V
-
4
A
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PGM
Peak gate power
-
16
W
PG(AV)
Mean gate power
-
3.0
W
Anode positive with respect to cathode
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CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Gate characteristics
Fig.4 Typical recovered charge (for a device rated VDRM = 600V, tq = 10µs)
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Fig.5 Transient thermal impedance - junction to case
Fig.6 Non-repetitive sub-cycle surge on-state current and I2t rating
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NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.7 Energy per pulse for sinusoidal pulses
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.8 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
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NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.9 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.10 Energy per pulse for trapezoidal pulses
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NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.11 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.12 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
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NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.13 Energy per pulse for trapezoidal pulses
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.14 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
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NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.15 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.16 Energy per pulse for trapezoidal pulses
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NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.17 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.18 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
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PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Ø4
15 max
Ø8.4 ± 0.3
8 min
210 ± 10
160 ± 10
30 max
Hex. 27AF
8 min
M = M12
K = 1/2" 20 UNF
K = 20.6 ± 0.6
M = 18.0 ± 0.5
Nominal weight: 120g
Mounting torque: 15Nm ±10%
Gate lead colour: White
Cathode lead colour: Red
Package outine type code: TO94
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4267-4 Issue No. 4.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
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