DYNEX DS1112SG59

DS1112SG
DS1112SG
Rectifier Diode
Replaces January 2000 version, DS4181-4.0
DS4181-5.0 August 2001
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VRRM 6000V
■ High Surge Capability
IF(AV) 811A
IFSM
APPLICATIONS
10500A
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DS1112SG60
6000
DS1112SG59
5900
DS1112SG58
5800
DS1112SG57
5700
DS1112SG56
5600
DS1112SG55
5500
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: G
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS1112SG58
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS1112SG
CURRENT RATINGS
Tcase = 75oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
811
A
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
1274
A
Continuous (direct) forward current
-
1172
A
534
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
839
A
Continuous (direct) forward current
-
727
A
Conditions
Max.
Units
IF
Half wave resistive load
Tcase = 100oC unless otherwise stated
Symbol
Parameter
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 100oC
630
A
IF(RMS)
RMS value
Tcase = 100oC
990
A
Continuous (direct) forward current
Tcase = 100oC
900
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 100oC
410
A
IF(RMS)
RMS value
Tcase = 100oC
644
A
Continuous (direct) forward current
Tcase = 100oC
550
A
IF
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DS1112SG
SURGE RATINGS
Parameter
Symbol
IFSM
I2t
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
Conditions
Max.
Units
10ms half sine; Tcase = 150oC
8.5
kA
VR = 50% VRRM - 1/4 sine
360x 103
A2s
10ms half sine; Tcase = 150oC
10.5
kA
VR = 0
565 x 103
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.032
o
Anode dc
-
0.064
o
Cathode dc
-
0.064
o
C/W
Double side
-
0.008
o
C/W
Single side
-
0.016
o
C/W
On-state (conducting)
-
160
o
Reverse (blocking)
-
150
o
Storage temperature range
–55
175
o
Clamping force
11.5
13.5
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 12.0kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DS1112SG
CHARACTERISTICS
Conditions
Parameter
Symbol
Min.
Max.
Units
VFM
Forward voltage
At 1800A peak, Tcase = 25oC
-
2.1
V
IRM
Peak reverse current
At VRRM, Tcase = 150oC
-
75
mA
QS
Total stored charge
-
3000
µC
Irr
Reverse recovery current
-
90
A
VTO
rT
IF = 1000A, dIRR/dt = 3A/µs
Tcase = 150˚C, VR = 100V
Threshold voltage
At Tvj = 150˚C
-
0.9
V
Slope resistance
At Tvj = 150˚C
-
0.93
mΩ
CURVES
2500
2500
Measured under pulse
conditions
dc
2000
2000
3 phase
Mean power dissipation - (W)
Instantaneous forward current, IF - (A)
Half wave
1500
Tj = 25˚C
Tj = 150˚C
1000
1500
1000
500
500
0
0.5
1.5
2.5
Instantaneous forward voltage, VF - (V)
3.5
0
0
VFM = A + Bln (IF) + C.IF+D.√IF
1000
1500
2000
Mean forward current, IF(AV) - (A)
Fig.2 Maximum (limit) forward characteristics
VFM Equation:-
500
Fig.3 Dissipation curves
Where
A = 1.249986
B = –0.17646
C = 0.000524
D = 0.041024
these values are valid for Tj = 125˚C for IF 500A to 2500A
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DS1112SG
400
35
Conditions:
Tj = 150˚C
VR = 100V
IF = 1000A
I2t = Î2 x t
2
1000
IF
QS
25
350
300
I2t
20
250
15
200
10
150
5
100
I2t value - (A2s x 103)
Peak half sine forward current - (kA)
30
Stored charge, QS - (µC)
10000
dIF/dt
100
0.1
IRM
1.0
10
Rate of decay of forward current, dIF/dt - (A/µs)
100
0
1
10
ms
Fig.4 Total stored charge
1
2 3
5
10
20
50
50
Cycles at 50Hz
Duration
Fig.5 Surge (non-repetitive) forward current vs time (with
50% VRRM at Tcase 125˚C)
0.1
Thermal Impedance - junction to case, Rth(j–c) - (˚C/W)
Anode side cooled
Double side cooled
0.01
0.001
0.001
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.01
0.1
Time - (s)
Effective thermal resistance
Junction to case ˚C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
1.0
10
Fig.6 Maximum (limit) transient thermal impedance junction to case
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DS1112SG
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (in both electrodes)
Cathode
Ø58.5 max
27.0
25.4
Ø34 nom
Ø34 nom
Anode
Nominal weight: 250g
Clamping force: 12kN ±10%
Package outine type code: G
Note:
1. Package maybe supplied with pins and/or tags.
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DS1112SG
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4181-5 Issue No. 5.0 August 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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