GP1600FSM12 GP1600FSM12 Single Switch IGBT Module Advance Information DS5451-1.2 October 2001 FEATURES KEY PARAMETERS ■ High Thermal Cycling Capability VCES ■ 1600A Per Module VCE(sat) (typ) ■ Non Punch Through Silicon IC (max) 1600A ■ Isolated MMC Base with AlN Substrates IC(PK) (max) 3200A 1200V 2.7V APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives ■ Resonant Converters External connection C1 C2 E1 E2 Aux C G The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. Aux E External connection The GP1600FSM12 is a singlel switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. Fig.1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Aux C ORDERING INFORMATION Order As: E1 C1 E2 C2 Aux E G GP1600FSM12 Note: When ordering, please use the complete part number. Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 GP1600FSM12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Collector current ICM Test Conditions Max. Units 1200 V ±20 V DC, Tcase = 82˚C 1600 A 1ms, Tcase = 112˚C 3200 A VGE = 0V - Pmax Maximum power dissipation Tcase = 25˚C (Transistor) 13.9 kW Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V THERMAL AND MECHANICAL RATINGS Symbol Conditions Parameter 9 o - 20 o Mounting torque 5Nm (with mounting grease) - 8 o Transistor - 150 o Diode - 125 o –40 125 o Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm Thermal resistance - transistor DC junction to case Rth(j-c) Thermal resistance - diode DC junction to case Rth(c-h) Thermal resistance - Case to heatsink (per module) Junction temperature Tstg - 2/10 Storage temperature range Screw torque Max. Units - Rth(j-c) Tj Min. - - C/kW C/kW C/kW C C C Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1600FSM12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Parameter Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 2 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 75 mA Gate leakage current VGE = ±20V, VCE = 0V - - 8 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4.5 - 6.5 V 2.7 3.5 V Collector-emitter saturation voltage VGE = 15V, IC =1600A - VCE(SAT) VGE = 15V, IC = 1600A, Tcase = 125˚C - 3.2 4.0 V Symbol ICES IGES Collector cut-off current Conditions IF Diode forward current DC - - 1600 A IFM Diode maximum forward current tp = 1ms - - 3200 A VF Diode forward voltage IF =1600A - 2.2 2.4 V IF =1600A, Tcase = 125˚C - 2.3 2.5 V VCE = 25V, VGE = 0V, f = 1MHz - 180 - nF - 15 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 GP1600FSM12 INDUCTIVE SWITCHING CHARACTERISTICS Tcase = 25˚C unless stated otherwise Symbol td(off) tf Parameter Turn-off delay time Fall time EOFF Turn-off energy loss td(on) Turn-on delay time tr Conditions Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Qrr Diode reverse recovery charge IC = 1600A VGE = ±15V VCE = 600 RG(ON) = RG(OFF) = 3.3Ω L ~ 100nH IF = 1600A VR = 50%VCES, dIF/dt = 2000A/µs Min. Typ. Max. Units - 1650 1800 ns - 200 250 ns - 350 450 mJ - 1600 1750 ns - 450 550 ns - 160 200 mJ - 100 130 µC - 170 - µC - 1900 2100 ns - 250 300 ns - 400 500 mJ - 1750 2000 ns - 500 550 ns - 250 350 mJ - 250 350 µC - 225 - µC Tcase = 125˚C unless stated otherwise. td(off) tf Turn-off delay time Fall time EOFF Turn-off energy loss td(on) Turn-on delay time tr Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Qrr Diode reverse recovery charge 4/10 IC = 1600A VGE = ±15V VCE = 600 RG(ON) = RG(OFF) = 3.3Ω L ~ 100nH IF = 1600A VR = 50%VCES, dIF/dt = 2000A/µs Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1600FSM12 CURVES Vge = 20/15/12/10V Vge = 20/15/12/10V 3200 3200 2800 Common emitter Tcase = 25˚C 2800 2400 Collector current, IC - (A) Collector current, IC - (A) 2400 2000 1600 1200 2000 1600 1200 800 800 400 400 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig.5 Typical output characteristics 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig.6 Typical output characteristics 400 450 Conditions: Tcase = 25˚C, 350 VCE = 600V, VGE = 15V Conditions: Tcase = 125˚C, VCE = 600V, VGE = 15V 400 A 250 200 B C 150 A 350 Turn-on energy, Eon - (mJ) 300 Turn-on energy, Eon - (mJ) Common emitter Tcase = 125˚C 100 300 B 250 C 200 150 100 A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 50 0 A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 50 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 Fig.7 Typical turn-on energy vs collector current 1600 0 200 400 600 800 1200 1400 1600 Fig.8 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1000 Collector current, IC - (A) 5/10 GP1600FSM12 600 600 Conditions: Tcase = 125˚C, VCE = 600V, 500 VGE = 15V A 400 B 400 B C 300 C 300 200 200 100 100 A : Rg = 3.3Ω B : Rg = 4.7Ω C : Rg = 7Ω A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 0 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 0 1600 200 400 600 800 1000 1200 1400 1600 Collector current, IC - (A) Fig.9 Typical turn-off energy vs collector current Fig.10 Typical turn-off energy vs collector current 120 2500 Conditions: VCE = 600V, VGE = 15V, 100 Rg = 3.3Ω 2000 td(off) Tcase = 125˚C 80 Switching times - (ns) Diode turn-off energy, Eoff(Diode) - (mJ) A Turn-off energy, Eoff - (mJ) Turn-off energy, Eoff - (mJ) Conditions: Tcase = 25˚C, VCE = 600V, 500 VGE = 15V 60 Tcase = 25˚C 40 td(on) 1500 Conditions: Tcase = 125˚C, VCE = 600V VGE = 15V Rg = 3.3Ω 1000 500 tf 20 tr 0 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 1600 Fig.11 Typical diode turn-off energy vs collector current 6/10 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 1600 Fig.12 Typical switching times Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1600FSM12 3200 2800 Tj = 25˚C Collector current, IC - (A) Forward current, IF - (A) 2400 Tj = 125˚C 2000 1600 1200 800 400 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 Conditions: VGE = ±15V Rg = 3.3Ω Tcase = 125˚C 0 3.5 Fig.13 Diode typical forward characteristics 200 400 600 800 1000 Collector-emitter voltage, VCE - (V) 1200 Fig.14 Reverse bias safe operating area 10000 100 Collector current, IC - (A) 1000 IC m ax Transient thermal impedance, Zth(j-c) - (˚C/kW) IC max. (single pulse) 50µs .D C 100µs (c on tin uo us ) 100 tp = 1ms 10 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) Fig.15 Forward bias safe operating area 10000 Diode 10 Transistor 1 0.1 0.001 0.01 0.1 Pulse width, tp - (s) 10 Fig.16 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1 7/10 GP1600FSM12 3000 2800 2600 2400 Collector current, IC - (A) 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 25 35 45 55 65 75 85 95 105 115 125 Case temperature, Tcase - (˚C) Fig.17 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1600FSM12 PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 15 15 5 E1 C1 E2 C2 65 6 18 57 Aux C 18.5 16 2.5 Aux E 14.5 11 43.3 57 65 G 20 35 6x Ø7 4x M8 38 28 31.5 6x M4 5 140 Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9± 0.3 Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Nominal weight: 1050g Module outline type code: F Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 GP1600FSM12 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5451-1 Issue No. 1.2 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com