GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES ■ Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS ■ High Power Choppers ■ Motor Controllers ■ Induction Heating ■ Resonant Converters ■ Power Supplies 2(K) 1(A,E) 3(C) 5(E1) 9(C1) 4(G) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. Fig. 1 Chopper circuit diagram The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The module incoporates high current rated freewheel diodes. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. ORDERING INFORMATION 11 10 1 2 3 8 9 6 7 5 4 Order As: GP200MKS12 Note: When ordering, please use the whole part number. Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 GP200MKS12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Collector current DC, Tcase = 72˚C 200 A IC(PK) Peak collector current 1ms, Tcase = 72˚C 400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 1490 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V Min. Max. Units - 84 ˚C/kW - 160 ˚C/kW - 80 ˚C/kW - 15 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M6 - 5 Nm IC THERMAL AND MECHANICAL RATINGS Rth(j-c) Test Conditions Parameter Symbol Thermal resistance - transistor (per arm) Continuous dissipation junction to case Rth(j-c) Thermal resistance - antiparallel diode Continuous dissipation Thermal resistance - freewheel diode Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/10 Junction temperature - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLK12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 12 mA Gate leakage current VGE = ±20V, VCE = 0V - - ±1 µA VGE(TH) Gate threshold voltage IC = 10mA, VGE = VCE 4.5 - 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 200A - 2.7 3.5 V VGE = 15V, IC = 200A, , Tcase = 125˚C - 3.2 4.0 V ICES IGES Test Conditions Parameter Symbol Collector cut-off current IF Diode forward current DC - - 200 A IFM Diode maximum forward current tp = 1ms - - 400 A VF Diode forward voltage - antiparallel diode IF = 200A - 2.2 2.4 V IF = 200A, Tcase = 125˚C - 2.3 2.5 V IF = 200A - 1.7 2.1 V IF = 200A, Tcase = 125˚C - 1.7 2.2 V 25 - nF 30 - nH Diode forward voltage - freewheel diode Cies Input capacitance LM Module inductance VCE = 25V, VGE = 0V, f = 1MHz - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 GP200MKS12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 200A - 500 700 ns Fall time VGE = ±15V - 150 200 ns EOFF Turn-off energy loss VCE = 600V - 25 35 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 400 550 ns L ~ 100nH - 80 110 ns - 20 30 mJ - 20 30 µC Min. Typ. Max. Units IC = 200A - 600 800 ns Fall time VGE = ±15V - 200 250 ns EOFF Turn-off energy loss VCE = 600V - 40 50 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 500 650 ns L ~ 100nH - 110 150 ns - 40 55 mJ - 55 70 µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge freewheel diode Test Conditions IF = 200A, VR = 50% VCES, dIF/dt = 2500A/µs Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge freewheel diode 4/10 Test Conditions IF = 200A, VR = 50% VCES, dIF/dt = 2000A/µs Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLK12 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V Vge = 20/15/12/10V 400 400 350 Common emitter Tcase = 25˚C 350 300 Collector current, IC - (A) Collector current, IC - (A) 300 250 200 150 250 200 150 100 100 50 50 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig. 3 Typical output characteristics 5.0 50 Tj = 125˚C VGE = ±15V 50 VCE = 600V Tj = 125˚C 45 VGE = ±15V VCE = 600V 40 A Turn-off energy, EOFF - (mJ) Turn-on energy, EON - (mJ) 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) Fig. 4 Typical output characteristics 60 B 40 C 30 20 A B C 35 30 25 20 15 10 10 0 0 Common emitter Tcase = 125˚C A: Rg = 10Ω B: Rg = 6.2Ω C: Rg = 4.7Ω 50 100 150 Collector current, IC - (A) Fig. 5 Typical turn-on energy vs collector current 200 A: Rg = 10Ω B: Rg = 6.2Ω C: Rg = 4.7Ω 5 0 0 50 100 150 Collector current, IC - (A) Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 200 5/10 GP200MKS12 36 900 VGE = ±15V VCE = 900V Tcase = 125˚C 28 700 24 Tcase = 25˚C 20 16 12 600 td(off) 500 td(on) 400 300 8 200 4 100 0 0 25 50 Tj = 125˚C VGE = ±15V VCE = 600V Rg = 4.7Ω 800 Switching times, - (ns) Diode turn-off energy, Eoff(diode) - (mJ) 32 75 100 125 150 175 0 0 200 Collector current, IT - (A) Fig. 7 Freewheel diode typical turn-off energy vs collector current tf tr 50 100 150 Collector current, IC - (A) 200 Fig. 8 Typical switching characteristics 10000 400 Tj = 25˚C 350 Tj = 125˚C 1000 Collector current, IC - (A) Forward current, IF - (A) 300 250 200 150 100 IC max. (single pulse) IC 100 50µs m ax .D C 100µs (c on tin uo us 10 ) tp = 1ms 50 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 3.5 Fig. 9 Freewheel diode typical forward characteristics 6/10 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 Fig. 10 Reverse bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLK12 500 Transient thermal impedance, Zth (j-c) - (°C/kW ) 1000 450 Collector current, IC - (A) 400 350 300 250 200 150 100 50 0 0 Tcase = 125˚C Vge = ±15V Rg = 4.7Ω* *Recommended minimum value 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) 1200 Antiparallel diode Transistor 100 10 1 0.001 0.01 0.1 Pulse width, tp - (s) 1 10 RBSOA Fig. 11 Forward bias safe operating area Fig. 12 Transient thermal impedance 320 280 Collector current, IC - (A) 240 200 160 120 80 40 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Case temperature, Tcase - (˚C) Fig. 13 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 7/10 GP200MKS12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 ± 0.5 28 ± 0.5 6 62 ± 0.8 48 ± 0.3 11 1 10 2 3 7 4x Fast on tabs 8 5 9 4 93 ± 0.3 3x M6 23 38max 8 106 ± 0.8 108 ± 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MLK12 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with Concept gate drivers AN5190 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 GP200MKS12 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5448-1 Issue No. 1.2 April 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com