DYNEX GP400LSS12

GP400LSS12
GP400LSS12
Single Switch IGBT Module
Replaces February 2000 version, DS5306-1.2
FEATURES
■
Non Punch Through Silicon
■
Isolated Copper Baseplate
■
Low Inductance Internal Construction
■
1200V Rating
■
400A Per Module
DS5306-2.3 November 2000
KEY PARAMETERS
VCES
(typ)
VCE(sat)
(max)
IC
(max)
IC(PK)
1200V
2.7V
400A
800A
APPLICATIONS
■
High Power Inverters
■
Motor Controllers
■
Induction Heating
■
Resonant Converters
2(E)
5(E1)
1(C)
4(C1)
3(G1)
The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.
The GP400LSS12 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Fig. 1 Single switch circuit diagram
4
2
5
1
3
Order As:
GP400LSS12
Note: When ordering, please use the compete part number.
Outline type code: L
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400LSS12
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1200
V
±20
V
Collector current
DC, Tcase = 75˚C
400
A
IC(PK)
Peak collector current
1ms, Tcase = 80˚C
800
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
2980
W
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V
Min.
Max.
Units
-
42
˚C/kW
-
80
˚C/kW
-
15
˚C/kW
Transistor
-
150
˚C
Diode
-
125
˚C
–40
125
˚C
Mounting - M6
-
5
Nm
Electrical connections - M4
-
2
Nm
IC
THERMAL AND MECHANICAL RATINGS
Rth(j-c)
Test Conditions
Parameter
Symbol
Thermal resistance - transistor
Continuous dissipation junction to case
Rth(j-c)
Thermal resistance - diode
Continuous dissipation junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
(with mounting grease)
Tj
Tstg
-
2/10
Junction temperature
Storage temperature range
Screw torque
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400LSS12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
25
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
±2
µA
VGE(TH)
Gate threshold voltage
IC = 20mA, VGE = VCE
4.5
-
6.5
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 400A
-
2.7
3.5
V
VGE = 15V, IC = 400A, , Tcase = 125˚C
-
3.2
4
V
Parameter
Symbol
ICES
IGES
Collector cut-off current
Test Conditions
IF
Diode forward current
DC, Tcase = 50˚C
-
-
400
A
IFM
Diode maximum forward current
tp = 1ms, Tcase = 80˚C
-
-
800
A
VF
Diode forward voltage
IF = 400A
-
2.2
2.4
V
IF = 400A, Tcase = 125˚C
-
2.3
2.5
V
VCE = 25V, VGE = 0V, f = 1MHz
-
45
-
nF
-
15
-
nH
Cies
Input capacitance
LM
Module inductance
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/10
GP400LSS12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 400A
-
700
850
ns
Fall time
VGE = ±15V
-
120
160
ns
EOFF
Turn-off energy loss
VCE = 600V
-
60
80
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
600
750
ns
L ~ 100nH
-
150
200
ns
-
35
75
mJ
-
30
40
µC
Min.
Typ.
Max.
Units
IC = 400A
-
900
1100
ns
Fall time
VGE = ±15V
-
200
250
ns
EOFF
Turn-off energy loss
VCE = 600V
-
85
100
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
700
850
ns
L ~ 100nH
-
180
230
ns
-
55
80
mJ
-
55
70
µC
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 400A, VR = 50% VCES,
dIF/dt = 2000A/µs
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 400A, VR = 50% VCES,
dIF/dt = 2000A/µs-1
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400LSS12
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V
Vge = 20/15/12/10V
800
800
Common emitter
Tcase = 25˚C
700
700
600
Collector current, IC - (A)
Collector current, IC - (A)
600
500
400
300
500
400
300
200
200
100
100
0
0
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
0
0
5.0
Fig. 3 Typical output characteristics
80
70
5.0
90
Conditions:
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
Conditions:
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
80
A
B
A
B
C
70
Turn-off energy, Eoff - (mJ)
Turn-on energy, Eon - (mJ)
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
60
C
50
40
30
20
60
50
40
30
20
A : Rg = 6.2Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
10
0
50
Common emitter
Tcase = 125˚C
0
100
150
200
250
300
350
Collector current, IC - (A)
400
Fig. 5 Typical turn-on energy vs collector current
450
A : Rg = 6.2Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
10
0
50
100
150
200
250
300
Collector current, IC - (A)
400
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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350
5/10
GP400LSS12
1000
Conditions:
VCE = 600V,
35 VGE = 15V,
Rg = 4.7Ω
900
800
td(off)
30
Switching times, ts - (ns)
Diode turn-off energy, Eoff(Diode) - (mJ)
40
Tcase = 125˚C
25
20
Tcase = 25˚C
15
700
td(on)
600
Conditions:
Tcase = 125˚C,
VCE = 600V
VGE = 15V
Rg = 3.3Ω
500
400
300
10
200
5
tf
100
tr
0
0
0
100
200
300
Collector current, IC (A)
400
0
Fig. 7 Typical diode turn-off energy vs collector current
50
100
150
200
250
300
Collector currrent, IC - (A)
350
400
Fig.8 Typical switching characteristics
800
1000
700
900
800
Tj = 25˚C
Collector current, IC - (A)
Forward current, IF - (A)
600
Tj = 125˚C
500
400
300
700
600
500
400
300
200
200
100
100
0
0
0.5
1
1.5
2
2.5
Forward voltage, VF - (V)
3
Fig. 9 Diode typical forward characteristics
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3.5
0
0
Tcase = 125˚C
Vge = ±15V
Rg = 4.7Ω*
*Recommended minimum value
200
1000
600
400
800
Collector-emitter voltage, Vce - (V)
1200
Fig. 10 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400LSS12
10000
IC max. (single pulse)
1000
IC
tp = 50µs
tp = 100µs
ax
m
100
C
.D
o
(c
in
nt
uo
Collector current, IC - (A)
Transient thermal impedance, Zth (j-c) - (°C/kW )
100
us
tp = 1ms
)
10
Diode
Transistor
10
1
0.1
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
10000
1
Fig. 11 Forward bias safe operating area
100
Pulse width, tp - (ms)
10000
1000
Fig. 12 Transient thermal impedance
1000
700
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
900
10
600
DC collector current, IC - (A)
Inverter phase current, IC(PK) - (A)
800
700
600
500
400
300
500
400
300
200
200
Conditions:
100 Tj = 125°C, Tc = 75°C,
Rg = 3.3Ω, VCC = 600V
0
1
10
fmax - (kHz)
Fig. 13 3 Phase inverter operating frequency
100
50
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
160
Fig. 14 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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140
7/10
GP400LSS12
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
46.5
46.5
3.5x6
4x Ø6.5
27
6x5.5
16
4
1
20
61.4
48
40
5
2
3
20
24
29
2x M6
23
36max
3x M4
5
106.4
Nominal weight: 270g
Recommeded fixings for mounting: M6
Recommended mounting torque: 5Nm (44lbs.ins)
Recommended torque for electrical connections (M4): 2Nm (17lbs.ins)
Module outline type code: L
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400LSS12
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving Dynex Semincoductor IGBT modules with Concept gate drivers
AN5384
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/10
GP400LSS12
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5306-2 Issue No. 2.2 October 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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