DYNEX GP800DDM12

GP800DDM12
GP800DDM12
Hi-Reliability Dual Switch IGBT Module
Advance Information
Replaces May 2000 version, DS5291-1.3
FEATURES
■
High Thermal Cycling Capability
■
800A Per Switch
■
Non Punch Through Silicon
■
Isolated MMC Base with AlN Substrates
DS5291-2.0 October 2000
KEY PARAMETERS
VCES
(typ)
VCE(sat)
(max)
IC
(max)
IC(PK)
1200V
2.7V
800A
1600A
APPLICATIONS
■
High Reliability Inverters
■
Motor Controllers
■
Traction Drives
■
Resonant Converters
11(G2)
12(C2)
10(E2)
3(C1)
4(E2)
2(C2)
1(E1)
5(E1)
7(C1)
6(G1)
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP800DDM12 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Dual switch circuit diagram
5
6
3
1
4
2
7
8
ORDERING INFORMATION
Order As:
9
12
11
GP800DDM12
Note: When ordering, please use the whole part number.
10
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/11
GP800DDM12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Test Conditions
Parameter
VGE = 0V
-
Max.
Units
1200
V
±20
V
Continuous collector current
Tcase = 80˚C
800
A
IC(PK)
Peak collector current
1ms, Tcase = 105˚C
1600
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
6490
W
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4000
V
Min.
Max.
Units
-
18
˚C/kW
-
40
˚C/kW
-
8
˚C/kW
Transistor
-
150
˚C
Diode
-
125
˚C
–40
125
˚C
Mounting - M6
-
5
Nm
Electrical connections - M4
-
2
Nm
Electrical connections - M8
-
10
Nm
THERMAL AND MECHANICAL RATINGS
Rth(j-c)
Test Conditions
Parameter
Symbol
Thermal resistance - transistor (per arm)
Continuous dissipation junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
(with mounting grease)
Tj
Tstg
-
2/11
Junction temperature
Storage temperature range
Screw torque
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800DDM12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
50
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
±4
µA
VGE(TH)
Gate threshold voltage
IC = 120mA, VGE = VCE
4
-
7.5
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 800A
-
2.7
3.5
V
VGE = 15V, IC = 800A, , Tcase = 125˚C
-
3.2
4
V
Symbol
ICES
IGES
Test Conditions
Parameter
Collector cut-off current
IF
Diode forward current
DC, Tcase = 50˚C
-
-
800
A
IFM
Diode maximum forward current
tp = 1ms
-
-
1600
A
VF
Diode forward voltage
IF = 800A
-
2.2
2.4
V
IF = 800A, Tcase = 125˚C
-
2.3
2.5
V
VCE = 25V, VGE = 0V, f = 1MHz
-
90
-
nF
-
20
-
nH
Cies
Input capacitance
LM
Module inductance
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/11
GP800DDM12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 800A
-
1100
1300
ns
Fall time
VGE = ±15V
-
150
200
ns
EOFF
Turn-off energy loss
VCE = 600V
-
130
170
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
800
900
ns
L ~ 100nH
-
320
400
ns
-
90
130
mJ
-
150
200
µC
Min.
Typ.
Max.
Units
IC = 800A
-
1300
1500
ns
Fall time
VGE = ±15V
-
200
250
ns
EOFF
Turn-off energy loss
VCE = 600V
-
170
250
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
950
1200
ns
L ~ 100nH
-
350
450
ns
-
150
200
mJ
-
200
260
µC
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 800A, VR = 50% VCES,
dIF/dt = 2000A/µs-1
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 800A, VR = 50% VCES,
dIF/dt = 2000A/µs-1
4/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800DDM12
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V
Vge = 20/15/12/10V
1600
1400
1600
Common emitter
Tcase = 25˚C
1400
1200
Collector current, IC - (A)
Collector current, IC - (A)
1200
1000
800
600
1000
800
600
400
400
200
200
0
0
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
0
0
5.0
Fig. 3 Typical output characteristics
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
5.0
Fig. 4 Typical output characteristics
220
160
Conditions:
Tcase = 25˚C,
VCE = 600V,
VGE = ±15V
140
Conditions:
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
200
A
180
120
A
160
Turn-on energy, Eon - (mJ)
Turn-on energy, Eon - (mJ)
Common emitter
Tcase = 125˚C
B
B
140
100
C
120
80
C
100
60
40
80
60
40
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
0
0
0
100
200
300
400
500
600
Collector current, IC - (A)
700
Fig. 5 Typical turn-on energy vs collector current
800
0
100
200
300
400
500 600
Collector current, IC - (A)
800
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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700
5/11
GP800DDM12
180
250
Conditions:
Tcase = 25˚C,
VCE = 600V,
VGE = ±15V
160
A
200
140
B
Turn-off energy, Eoff - (mJ)
Turn-off energy, Eoff - (mJ)
Conditions:
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
120
C
100
80
60
40
0
100
200
Conditions:
VCE = 600V,
VGE = 15V,
Rg = 3.3Ω
100
300
400
500
600
Collector current, IC - (A)
700
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
0
800
0
100
200
300
400
500
600
Collector current, IC - (A)
700
800
Fig.8 Typical turn-off energy vs collector current
2000
Conditions:
Tcase = 125˚C,
VCE = 600V
VGE = 15V
Rg = 3.3Ω
1800
Tcase = 125˚C
td(off)
1600
50
tf
1400
Switching times, ts - (ns)
Diode turn-off energy, Eoff(Diode) - (mJ)
60
C
50
Fig.7 Typical turn-off energy vs collector current
70
B
150
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
0
A
1200
40
1000
Tcase = 25˚C
30
20
td(on)
800
600
400
10
200
tr
0
0
0
200
400
600
Collector current, IC (A)
800
Fig.9 Typical diode reverse recovery charge vs collector current
6/11
0
100
200
300
400
500
600
Collector currrent, IC - (A)
700
800
Fig.10 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800DDM12
1600
2000
1400
1800
1600
Tj = 25˚C
Collector current, IC - (A)
Forward current, IF - (A)
1200
Tj = 125˚C
1000
1400
1200
800
1000
600
800
600
400
400
200
200
0
0
0.5
1
1.5
2
2.5
Forward voltage, VF - (V)
3
0
0
3.5
Fig.11 Diode typical forward characteristics
200
1000
600
400
800
Collector-emitter voltage, Vce - (V)
1200
Fig.12 Reverse bias safe operating area
10000
1000
IC
.D
ax
m
C
100
)
us
uo
tin
on
(c
tp = 50µs
tp = 100µs
tp = 1ms
10
Transient thermal impedance, Zth (j-c) - (°C/kW )
100
IC max. (single pulse)
Collector current, IC - (A)
Tcase = 125˚C
Vge = ±15V
Rg = 3.3Ω*
*Recommended minimum value
Diode
Transistor
10
1
0.1
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig.13 Forward bias safe operating area
10000
1
10
100
Pulse width, tp - (ms)
10000
Fig.14 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1000
7/11
GP800DDM12
2000
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
1800
1400
1200
DC collector current, IC - (A)
Inverter phase current, IC(PK) - (A)
1600
1000
1400
1200
1000
800
600
800
600
400
400
Conditions:
200 Tj = 125°C, Tc = 75°C,
Rg = 3.3Ω, VCC = 600V
0
1
10
fmax - (kHz)
Fig.15 3-Phase inverter operating frequency
8/11
200
50
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
140
160
Fig.16 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800DDM12
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
62
62
13
15
15
5
2
57
4
11.85
1
43.3
57
65
8
9
26
12
13
3
7
18
16
24
65
6
11
10
14 11.5
20
35
6x Ø7
4x M8
38
28
31.5
6x M4
5
140
Nominal weight: 1000g
Module outline type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/11
GP800DDM12
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving Dynex Semincoductor IGBT modules with Concept gate drivers
AN5384
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
10/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800DDM12
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 02. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5291-2 Issue No. 2.0 October 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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11/11