DYNEX MP03XXX175

MP03XXX 175 Series
MP03 XXX 175 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS5098-3.0
DS5098-4.0 January 2000
FEATURES
KEY PARAMETERS
1600V
VDRM
ITSM
6800A
IT(AV) (per arm)
175A
2500V
Visol
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
CIRCUIT OPTIONS
■ Alumina (non-toxic) Isolation Medium
Code
Circuit
HBT
APPLICATIONS
■ Motor Control
■ Controlled Rectifier Bridges
HBP
■ Heater Control
■ AC Phase Control
HBN
VOLTAGE RATINGS
Type
Number
MP03/175-16
1600
MP03/175-14
1400
MP03/175-12
1200
MP03/175-10
1000
PACKAGE OUTLINE
Conditions
Repetitive
Peak
Voltages
VDRM VRRM
T(Vj) = 125oC
IDRM = IRRM = 30mA
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available. 1800V product also available consult factory. For full description of part number see
"Ordering instructions" on page 3.
CURRENT RATINGS - PER ARM
Symbol
IT(AV)
IT(RMS)
Module outline type code: MP03.
See Package Details for furtyher information.
Parameter
Mean on-state current
RMS value
Max.
Units
Tcase = 75oC
175
A
Tcase = 85oC
146
A
Theatsink = 75oC
148
A
Theatsink = 85oC
123
A
275
A
Conditions
Halfwave, resistive load
Tcase = 75oC
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MP03 XXX 175 Series
SURGE RATINGS - PER ARM
Parameter
Symbol
ITSM
I 2t
Max.
Units
VR = 0
6800
A
VR = 50% VRRM
5500
A
VR = 0
231000
A 2s
VR = 50% VRRM
150000
A 2s
Max.
Units
dc
0.21
o
C/W
halfwave
0.22
o
C/W
3 phase
0.23
o
C/W
Mounting torque = 5Nm
with mounting compound
0.05
o
Conditions
10ms half sine;
Tj = 125oC
Surge (non-repetitive) on-state current
10ms half sine;
Tj = 125oC
I2t for fusing
THERMAL & MECHANICAL RATINGS
Symbol
Rth(j-c)
Parameter
Thermal resistance - junction to case
per Thyristor or Diode
Conditions
Rth(c-hs)
Thermal resistance - case to heatsink
per Thyristor or Diode
Tvj
Virtual junction temperature
125
o
C
Tsto
Storage temperature range
-40 to 125
o
C
Visol
Isolation voltage
Commoned terminals to base plate
AC RMS, 1min, 50Hz
C/W
2.5
kV
Max.
Units
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
Parameter
Conditions
On-state voltage
At 500A, Tcase = 25oC - See Note 1
1.3
V
Peak reverse and off-state current
At VRRM/VDRM, Tj = 125oC
30
mA
dV/dt
Linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC
200*
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 500A
Repetitive 50Hz
Gate source 10V, 5Ω
Rise time 0.5µs, Tj =125oC
100
A/µs
VT(TO)
Threshold voltage
At Tvj = 125oC - See Note 1
0.98
V
On-state slope resistance
At Tvj = 125oC - See Note 1
0.75
mΩ
VTM
IRRM/IDRM
rT
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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MP03XXX 175 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
Typ.
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
-
3.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
-
150
mA
VGD
Gate non-trigger voltage
VDRM= 5V, Tcase = 25oC
-
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
-
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
-
0.25
V
VRGM
Peak reverse gate voltage
-
5.0
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
-
10
A
PGM
Peak gate power
tp = 25µs
-
100
W
PG(AV)
Mean gate power
-
5
W
ORDERING INSTRUCTIONS
Examples:
Part number is made up as follows:
MP03 HBT 175 - 12
MP
03
HBT
175
12
= Pressure contact module
= Outline type
= Circuit configuration code (see "circuit options" - front page)
= Nominal average current rating at Tcase = 75oC
= VRRM/100
MP03 HBP175-12
MP03 HBN175-16
MP03 HBT175-10
NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN.
Types HBP and HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base temperature
at 75oC if full rated current is to be achieved. Power dissipation
may be calculated by use of VT(TO) and rT information in accordance
with standard formulae. We can provide assistance with
calculations or choice of heatsink if required.
The heatsink surface must be smooth and flat; a surface finish of
N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.
It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.
3/10
MP03 XXX 175 Series
CURVES
Instantaneous forward current IF - (A)
2000
Measured under pulse conditions
1500
Tj = 150˚C
1000
500
0
0.5
1.0
1.5
2.0
Instantaneous forward voltage VF - (V)
2.5
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
100
Pulse Frequency Hz Table gives pulse power PGM in watts
Pulse
Width
µs
100
50
400
75W
50W
100
100
100
25
-
100
100
100
100
50
-
100
100
100
100
100
10
20
25
100
10 500
1ms
10ms
10W
5W
Tj = 25˚C
Tj = 125˚C
1.0
9%
t9
mi
r li
e
pp
%
t1
U
r
we
i
lim
Lo
VGD
0.1
0.001
0.01
0.1
Gate trigger current IGT - (A)
Fig. 2 Gate trigger characteristics
4/10
100W
Tj = -40˚C
Gate trigger voltage VGT - (V)
VFGM
1.0
10
IFGM
MP03XXX 175 Series
0.3
Rth(j-c)
0.2
0.1
0
0.001
0.010
0.100
1.0
10
100
Time - (s)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
15
10
180
5
I2t value - A2s x 103
Peak half sine wave on-state current - (kA)
Thermal Impedance - (˚C/W)
Rth(j-hs)
140
I2t
100
0
10
1
ms
1
2 3 45
60
50
cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125˚C (Thyristor or diode)
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MP03 XXX 175 Series
On-state power loss per device - (W)
350
300
250
180˚
120˚
200
150
90˚
60˚
30˚
100
50
0
0
200
100
150
Mean on-state current IT(AV) - (A)
50
250
300
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
On-state power loss per device - (W)
350
d.c.
300
180˚
250
120˚
90˚
200
60˚
30˚
150
100
50
0
0
100
150
200
250
300
Mean on-state current IT(AV) - (A)
FIG 6loss
ON per
STATE
POWER
PER
ARM conduction
FORWARD
CURRENT
Fig. 6 On-state power
arm vs
forwardLOSS
current
at various
angles,
square wave, 50/60Hz
6/10
50
Maximum permissible case temperature - (˚C)
MP03XXX 175 Series
140
120
100
80
60
40
20
30˚
0
0
20
40
60
60˚
90˚
120˚
180˚
80 100 120 140 160 180
Mean on-state current IT(AV) - (A)
200
220
240
Maximum permissible case temperature - (˚C)
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
140
120
100
80
d.c.
60
40
20
30˚
0
20
40
60
80
60˚
90˚
120˚
180˚
100 120 140 160 180 200
Mean on-state current IT(AV) - (A)
220
240
260
280
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
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MP03 XXX 175 Series
1400
1200
Total power - (W)
1000
Rth(hs-a) ˚C/W
R- Load
0.02
L- Load
0.04
800
400
0.08
0.10
0.12
0.15
0.20
200
0.30
0.40
600
0
0
40
80 100
0
20
60
Maximum ambient temperature - (˚C)
200
400
D.C. output current - (A)
600
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
1400
1200
Rth(hs-a) ˚C/W
0.04 0.02
Total power - (W)
1000
800
0.08
400
0.10
0.12
0.15
0.20
200
0.30
0.40
600
R & L - Load
0
20
60
0
40
80 100
0
Maximum ambient temperature - (˚C)
200
400
D.C. output current - (A)
600
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various
values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
8/10
MP03XXX 175 Series
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO
NOT SCALE.
42.5
35
28.5
Ø5.5
5
6.5
5
18
50
38
5
K2
G2
G1
K1
80
2.8x0.8
2
3x M8
3
32
52
1
92
Recommended fixings for mounting:
Recommended mounting torque:
Recommended torque for electrical connections:
Maximum torque for electrical connections:
Nominal weight: 950g
M5 socket head cap screws.
5Nm (44lb.ins)
8Nm (70lb.ins)
9Nm (80lb.ins)
Module outline type code: MP03
CIRCUIT CONFIGURATIONS
G1K1
K2 G2
2
1
3
HBT
G1K1
1
2
3
HBP
K2 G2
1
2
3
HBN
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MP03 XXX 175 Series
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5098-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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