DYNEX TF70720L

TF707..L
TF707..L
Fast Switching Thyristor
Replaces March 1998 version, DS4275-2.2
DS4275-3.0 January 2000
APPLICATIONS
KEY PARAMETERS
VDRM
2500V
IT(RMS)
600A
ITSM
9000A
dV/dt 300V/µs
dI/dt
500A/µs
tq
100µs
■ High Power Inverters And Choppers
■ UPS
■ Railway Traction
■ Induction Heating
■ AC Motor Drives
■ Cycloconverters
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ High Voltage
VOLTAGE RATINGS
Type Number
Repetitive
Peak
Voltages
VDRM VRRM
Conditions
2500
2400
2200
2000
VRSM = VRRM + 100V
TF707 25L
TF707 24L
TF707 22L
TF707 20L
IDRM = IRRM = 60mA
at VRRM or VDRM & Tvj
Lower voltage grades available.
Outline type code: MU171.
See Package Details for further information.
CURRENT RATINGS
Parameter
Symbol
Conditions
Max.
Units
IT(AV)
Mean on-state current
Half sinewave, 50Hz, Tcase = 80oC
380
A
IT(RMS)
RMS value
Half sinewave, 50Hz, Tcase = 80oC
600
A
1/5
TF707..L
SURGE RATINGS
Symbol
Parameter
Conditions
Max.
Units
ITSM
Surge (non-repetitive) on-state current
10ms half sine; VR = 0% VRRM, Tj = 125˚C
7.0
kA
I2t
I2t for fusing
10ms half sine; VR = 0% VRRM, Tj = 125˚C
245 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
dc
-
0.04
o
Anode dc
-
0.072
o
Cathode dc
-
0.096
o
Double side
-
0.01
o
Single side
-
0.02
o
On-state (conducting)
-
125
o
Reverse (blocking)
-
125
o
-40
150
o
14.25
15.75
Parameter
Symbol
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 15.0kN
with mounting compound
C/W
C/W
C
Virtual junction temperature
Storage temperature range
Clamping force
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
QRA1
tp = 1ms
dIR/dt
0.5x IRR
IRR
2/5
C/W
C
C
kN
TF707..L
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Max.
Units
Maximum on-state voltage
At 1000A peak, Tcase = 125oC
-
2.8
V
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
80
mA
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% VDRM Tj = 125oC, Gate open circuit
-
300
V/µs
Gate source 20V, 20Ω
Repetitive 50Hz
-
500
A/µs
dI/dt
Rate of rise of on-state current
tr ≤ 0.5µs, Tj = 125˚C
Non-repetitive
-
800
A/µs
VTM
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
1.8
V
rT
On-state slope resistance
At Tvj = 125oC
-
1.0
mΩ
tgd
Delay time
-
-*
µs
Total turn-on time
Tj = 25˚C, IT = 50A,
VD = 300V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
-
-*
µs
IH
Holding current
Tj = 25oC, ITM = 1A, VD = 12V
100*
-
mA
IL
Latching current
Tj = 25oC, IG = 0.5A, VD = 12V
300*
-
mA
tq
Turn-off time
Tj = 125˚C, IT = 250A, VR = 50V,
tq code: L
dV/dt = 20V/µs (Linear to 60% VDRM),
dIR/dt = 50A/µs, Gate open circuit
-
100
µs
-
500
µC
Typ.
Max.
Units
VT(TO)
t(ON)TOT
QRR
Reverse recovery charge
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 12V, RL = 6Ω, Tcase = 25oC
-
3.0
V
IGT
Gate trigger current
VDRM = 12V, RL = 6Ω, Tcase = 25oC
-
300
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC, RL = 1kΩ,
-
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
-
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
-
0.25
V
VRGM
Peak reverse gate voltage
-
5.0
V
IFGM
Peak forward gate current
-
10
A
PGM
Peak gate power
-
50
W
PG(AV)
Mean gate power
-
3.0
W
Anode positive with respect to cathode
3/5
TF707..L
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode
Ø57.8 max
Ø34 nom
26 ± 1
Ø1.5
Gate
Ø34 nom
Anode
Ø54 max
Nominal weight: 310g
Clamping force: 15kN ±10%
Lead length: 250mm
Package outine type code: MU171
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Gate triggering and the use of gate characteristics
Recommendations for clamping power semiconductors
AN4840
AN4839
The effect of temperature on thyristor performance
AN4870
Thyristor and diode measurement with a multi-meter
AN4853
Turn-on performance of thyristors in parallel
AN4999
Use of V , r on-state characteristic
AN5001
TO
4/5
T
TF707..L
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4275-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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