TV22..F TV22..F Fast Recovery Diode Replaces March 1998 version, DS4210-2.2 DS4210-3.0 January 2000 KEY PARAMETERS VRRM 1600V IF(AV) 305A IFSM 5000A Qr 70µC trr 3.2µs APPLICATIONS ■ Induction Heating ■ A.C. Motor Drives ■ Snubber Diode ■ Welding ■ High Frequency Rectification ■ UPS FEATURES ■ Thermal Fatigue Free Pressure Contact ■ High Surge Capability ■ Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions TV22 16F M or K VRSM = VRRM + 100V 1600 TV22 14F M or K 1400 TV22 12F M or K 1200 TV22 10F M or K 1000 TV22 08F M or K 800 TV22 06F M or K 600 For 3/4" 16 UNF thread, add suffix K, e.g. TV22 16FK. For M16 thread, add suffix M, e.g. TV22 16FM. For stud anode add 'R' to type number, e.g. TV22 16FMR. Outline type codes: DO9. See Package Details for further information. CURRENT RATINGS Symbol Parameter Conditions Max. Units IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 305 A IF(RMS) RMS value Tcase = 65oC 346 A 1/7 TV22..F SURGE RATINGS Symbol IFSM I2t IFSM I2t Conditions Parameter Surge (non-repetitive) forward current Max. Units 5.0 kA 125 x 103 A2s - kA - A2s 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing THERMAL AND MECHANICAL DATA Symbol Conditions Parameter dc Min. Max. Units - 0.16 o o C/W Rth(j-c) Thermal resistance - junction to case Rth(c-h) Thermal resistance - case to heatsink Mounting torque 35.0Nm with mounting compound - 0.06 Tvj Virtual junction temperature On-state (conducting) - 150 o Tstg Storage temperature range -55 175 o Mounting torque 30.0 35.0 Nm Typ. Max. Units - C/W C C CHARACTERISTICS Symbol VFM Forward voltage At 750A peak, Tcase = 25oC - 1.6 V IRRM Peak reverse current At VRRM, Tcase = 150oC - 40 mA - 3.2 µs trr Reverse recovery time Recovered charge (50% chord) IF = 750A, diRR/dt = 100A/µs - 70 µC IRM Reverse recovery current Tcase = 125oC, VR = 100V - 43 A K Soft factor 1.8 - - QRA1 VTO Threshold voltage At Tvj = 150oC - 1.0 V rT Slope resistance At Tvj = 150oC - 0.8 mΩ Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - - V VFRM 2/7 Conditions Parameter TV22..F DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR CURVES 3000 Measured under pulse conditions Instantaneous forward current IF - (A) 2500 2000 Tj = 150˚C 1500 Tj = 25˚C 1000 500 1.0 1.5 2.0 2.5 3.0 Instantaneous forward voltage VF - (V) Fig.1 Maximum (limit) forward characteristics 3/7 TV22..F 500 Measured under pulse conditions Instantaneous forward current IF - (A) 400 300 Tj = 150˚C Tj = 25˚C 200 100 0 0.95 1.05 1.15 1.25 1.35 1.45 Instantaneous forward voltage VF - (V) Fig.2 Maximum (limit) forward characteristics 10000 QS = ∫ IF 50µs Conditions: 0 Tj = 125˚C, VR = 100V Reverse recovered charge QS - (µC) QS tp = 1ms dIR/dt 1000 IRR IF = 2000A IF = 1000A IF = 500A IF = 200A IF = 100A 100 10 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) Fig.3 Recovered charge 4/7 1000 TV22..F 1000 Conditions: Tj = 125˚C, VR = 100V Reverse recovery current IRR - (A) IF = 2000A IF = 1000A IF = 500A IF = 200A 100 IF = 100A 10 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.4 Typical reverse recovery current vs rate of rise of reverse current Thermal impedance - (˚C/W) 0.100 d.c. 0.010 0.001 0.01 0.1 1 Time - (s) 10 100 Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) 5/7 TV22..F PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Ø4 Ø12.5 ± 0.5 12 min 20 ± 2 230 ± 10 230 ± 10 Hex. 32AF No type + K - 27 ± 0.5 No type + M - 18 ± 0.5 10 min K Thread 3/4" 16 UNF M Thread M16 3.17 max ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Thyristor and diode measurement with a multi-meter AN4853 Use of VTO, rT on-state characteristic AN5001 6/7 TV22..F POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4210-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 7/7