Low Power, 70 MHz Buffer Amplifier Features General Description # # # # # # # # # # The EL2001 is a low cost monolithic, high slew rate, buffer amplifier. Built using the Elantec monolithic Complementary Bipolar process, this patented buffer has a b 3 dB bandwidth of 70 MHz, and delivers 100 mA, yet draws only 1.3 mA of supply current. It typically operates from g 15V power supplies but will work with as little as g 5V. 1.3 mA supply current 70 MHz bandwidth 2000 V/ms slew rate Low bias current, 1 mA typical 100 mA output current Short circuit protected Low cost Stable with capacitive loads Wide supply range g 5V to g 15V No thermal runaway Applications # # # # Op amp output current booster Cable/line driver A/D input buffer Low standby current systems Ordering Information Part No. Temp. Range Pkg. EL2001C EL2001C This high speed buffer may be used in a wide variety of applications in military, video and medical systems. A typical example is a general purpose op amp output current booster where the buffer must have sufficiently high bandwidth and low phase shift at the maximum frequency of the op amp. Elantec’s products and facilities comply with MIL-I-45208A, and other applicable quality specifications. For information on Elantec’s processing, see the Elantec document, QRA-1: Elantec’s Processing, Monolithic Integrated Circuits. Connection Diagrams EL2001 DIP Pinout EL2001 SOL Pinout OutlineÝ EL2001ACN 0§ C to a 75§ C P-DIP MDP0031 EL2001CM 0§ C to a 75§ C 20-Lead SOL MDP0027 EL2001CN 0§ C to a 75§ C P-DIP MDP0031 2001 – 1 Top View 2001 – 2 Top View Note: Non-designated pins are no connects and are not electrically connected internally. Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. © 1989 Elantec, Inc. December 1995 Rev G Manufactured under U.S. Patent No. 4,833,424, 4,827,223 U.K. Patent No. 2217134 EL2001C Low Power, 70 MHz Buffer Amplifier Absolute Maximum Ratings VS VIN IIN PD Supply Voltage (V a b Vb) Input Voltage (Note 1) Input Current (Note 1) Power Dissipation (Note 2) Output Short Circuit Duration (Note 3) TA g 18V or 36V g 15V or VS TJ TST g 50 mA See Curves Operating Temperature Range EL2001AC/EL2001C Operating Junction Temperature Storage Temperature 0§ C to a 75§ C 150§ C b 65§ C to a 150§ C Continuous Important Note: All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore TJ e TC e TA. Test Level I II III IV V Test Procedure 100% production tested and QA sample tested per QA test plan QCX0002. 100% production tested at TA e 25§ C and QA sample tested at TA e 25§ C , TMAX and TMIN per QA test plan QCX0002. QA sample tested per QA test plan QCX0002. Parameter is guaranteed (but not tested) by Design and Characterization Data. Parameter is typical value at TA e 25§ C for information purposes only. Electrical Characteristics VS e g 15V, RS e 50X, unless otherwise specified Parameter VOS Description Offset Voltage EL2001A/EL2001AC VIN Load Temp Min Typ 0 % 25§ C b 10 2 TMIN, TMAX b 15 25§ C b 30 TMIN, TMAX b 40 25§ C b3 TMIN, TMAX b6 25§ C b5 TMIN, TMAX b 10 EL2001/EL2001C 0 IIN Input Current EL2001A/EL2001AC 0 % % EL2001/EL2001C 0 RIN EL2001AC EL2001C Limits Input Resistance g 12V % 25§ 1 TMIN, TMAX 0.5 100X 2 2 1 1 8 Max Units Test Level I I mV a 15 III mV a 30 I mV a 40 III mV a3 I mA a6 III mA a5 I mA a 10 III mA I MX III MX TD is 2.5in Test Conditions EL2001C Low Power, 70 MHz Buffer Amplifier Electrical Characteristics VS e g 15V, RS e 50X, unless otherwise specified Ð Contd. Parameter AV1 Description Voltage Gain Vin Load g 12V % AV2 Voltage Gain AV3 Voltage Gain with VS e g 5V g 3V Output Voltage Swing g 12V VO ROUT Output Resistance g 10V g 2V Temp Min Typ 0.998 25§ C 0.990 TMIN, TMAX 0.985 25§ C 0.83 TMIN, TMAX 0.80 25§ C 0.82 TMIN, TMAX 0.79 100X 100X 25§ C g 10 TMIN, TMAX g 9.5 100X 25§ C 100X IOUT Output Current IS Supply Current g 12V 0.89 g 11 10 0 25§ C g 100 TMIN, TMAX g 95 (Note 4) 25§ C % 1.3 0 0.5V 25§ C 60 TMIN, TMAX 50 % 25§ C tr Rise Time 100X td Propagation Delay 0.5V 100X 25§ C SR Slew Rate, (Note 6) g 10V 100X 25§ C 75 4.2 1200 Units Test Level I V/V III V/V I V/V III V/V I V/V III V/V I V III V 15 I X 18 III X I mA g 160 TMIN, TMAX Supply Rejection, (Note 5) Max 0.93 TMIN, TMAX PSRR EL2001AC EL2001C Limits III mA 2.0 I mA 2.5 III mA I dB III dB V ns 2.0 V ns 2000 IV V/ms Note 1: If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceeds g 7.5V then the input current must be limited to g 50 mA. See the applications section for more information. Note 2: The maximum power dissipation depends on package type, ambient temperature and heat sinking. See the characteristic curves for more details. Note 3: A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited. Note 4: Force the input to a 12V and the output to a 10V and measure the output current. Repeat with b12 VIN and b10V on the output. Note 5: VOS is measured at VS a e a 4.5V, VSb e b4.5V and at VS a e a 18V, VSb e b18V. Both supplies are changed simultaneously. Note 6: Slew rate is measured between VOUT e a 5V and b5V. 3 TD is 4.2in Test Conditions EL2001C Low Power, 70 MHz Buffer Amplifier Typical Performance Curves Offset Voltage vs Temperature Voltage Gain vs Temperature Output Voltage Swing vs Temperature Supply Current vs Supply Voltage Voltage Gain vs Input Voltage Voltage Gain vs Source Resistance Input Bias Current vs Input Voltage g Slew Rate vs Supply Voltage g Slew Rate vs Capacitive Load 2001 – 4 4 EL2001C Low Power, 70 MHz Buffer Amplifier Typical Performance Curves Ð Contd. Voltage Gain vs Frequency for Various Resistive Loads Voltage Gain vs Frequency for Various Capacitive Loads; RL e 100X Voltage Gain vs Frequency for Various Capacitive Loads; RL e % Phase Shift vs Frequency for Various Capacitive Loads b 3 dB Bandwidth vs Supply Voltage Power Supply Rejection Ratio vs Frequency Output Impedance vs Frequency Reverse Isolation vs Frequency Small Signal Output Resistance vs Output Current 2001 – 5 5 EL2001C Low Power, 70 MHz Buffer Amplifier Typical Performance Curves Ð Contd. 8-Lead Plastic DIP Maximum Power Dissipation vs Ambient Temperature 20-Lead SOL Maximum Power Dissipation vs Ambient Temperature Short Circuit Current vs Temperature 2001 – 6 Large Signal Response Small Signal Response 2001 – 7 2001 – 8 6 EL2001C Low Power, 70 MHz Buffer Amplifier Power Supplies Burn-In Circuit The EL2001 may be operated with single or split supplies with total voltage difference between 10V ( g 5V) and 36V ( g 18V). It is not necessary to use equal split value supplies. For example b 5V and a 12V would be excellent for signals from b 2V to a 9V. Bypass capacitors from each supply pin to ground are highly recommended to reduce supply ringing and the interference it can cause. At a minimum, 1 mF tantalum capacitor with short leads should be used for both supplies. 2001 – 9 Simplified Schematic Input Characteristics The input to the EL2001 looks like a resistance in parallel with about 3.5 picofarads in addition to a DC bias current. The DC bias current is due to the miss-match in beta and collector current between the NPN and PNP transistors connected to the input pin. The bias current can be either positive or negative. The change in input current with input voltage (RIN) is affected by the output load, beta and the internal boost. RIN can actually appear negative over portions of the input range; typical input current curves are shown in the characteristic curves. Internal clamp diodes from the input to the output are provided. These diodes protect the transistor base emitter junctions and limit the boost current during slew to avoid saturation of internal transistors. The diodes begin conduction at about g 2.5V input to output differential. When that happens the input resistance drops dramatically. The diodes are rated at 50 mA. When conducting they have a series resistance of about 20X. There is also 100X in series with the input that limits input current. Above g 7.5V differential input to output, additional series resistance should be added. 2001 – 10 Application Information The EL2001 is a monolithic buffer amplifier built on Elantec’s proprietary dielectric isolation process that produces NPN and PNP transistors with essentially identical DC and AC characteristics. The EL2001 takes full advantage of the complementary process with a unique circuit topology. Source Impedance The EL2001 has good input to output isolation. When the buffer is not used in a feedback loop, capactive and resistive sources up to 1 Meg present no oscillation problems. Care must be used in board layout to minimize output to input coupling. CAUTION: When using high source impedances (RS l 100 kX), significant gain errors can be observed due to output offset, load resistor, and the action of the boost circuit. See typical performance curves. Elantec has applied for two patents based on the EL2001’s topology. The patents relate to the base drive and feedback mechanism in the buffer. This feedback makes 2000 V/ms slew rates with 100X loads possible with very low supply current. 7 EL2001C TAB WIDE Low Power, 70 MHz Buffer Amplifier EL2001C Macromodel TD is 3.9in *Connections: a input a Vsupply * l b Vsupply * l l output * l l l * l l l l .subckt M2001 2 1 4 7 * Input Stage el 10 0 2 0 1.0 r1 10 0 1K rh 10 11 150 ch 11 0 9pF rc 11 12 100 cc 12 0 4pF e2 13 0 12 0 1.0 * Output stage q1 4 13 14 qp q2 1 13 15 qn q3 1 14 16 qn q4 4 15 19 qp r2 16 7 1 r3 19 7 1 i1 1 14 0.9mA i2 15 4 0.9mA * Bias Current iin a 2 0 1uA * Models .model qn npn(is e 5eb15 bf e 150 rb e 200 ptf e 45 tf e 0.1nS) .model qp pnp(is e 5eb15 bf e 150 rb e 200 ptf e 45 tf e 0.1nS) .ends 8 EL2001C Low Power, 70 MHz Buffer Amplifier EL2001C Macromodel Ð Contd. 2001 – 11 9 10 BLANK 11 BLANK EL2001C EL2001C Low Power, 70 MHz Buffer Amplifier General Disclaimer Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. December 1995 Rev G WARNING Ð Life Support Policy Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages. Elantec, Inc. 1996 Tarob Court Milpitas, CA 95035 Telephone: (408) 945-1323 (800) 333-6314 Fax: (408) 945-9305 European Office: 44-71-482-4596 12 Printed in U.S.A.