2GHz GBWP Gain-of-10 Stable Operational Amplifier Features General Description • 2GHz gain-bandwidth product • Gain-of-10 stable • Conventional voltage-feedback topology • Low offset voltage = 200µV • Low bias current = 2µA • Low offset current = 0.1µA • Output current = 50mA over temperature • Fast settling = 13ns to 0.1% The EL2075C is a precision voltage-feedback amplifier featuring a 2GHz gain-bandwidth product, fast settling time, excellent differential gain and differential phase performance, and a minimum of 50mA output current drive over temperature. Applications • • • • • • • • Active filters/integrators High-speed signal processing ADC/DAC buffers Pulse/RF amplifiers Pin diode receivers Log amplifiers Photo multiplier amplifiers High speed sample-and-holds EL2075C EL2075C The EL2075C is gain-of-10 stable with a -3dB bandwidth of 400MHz at AV = +10. It has a very low 200µV of input offset voltage, only 2µA of input bias current, and a fully symmetrical differential input. Like all voltage-feedback operational amplifiers, the EL2075C allows the use of reactive or non-linear components in the feedback loop. This combination of speed and versatility makes the EL2075C the ideal choice for all op-amp applications at a gain of 10 or greater requiring high speed and precision, including active filters, integrators, sampleand-holds, and log amps. The low distortion, high output current, and fast settling makes the EL2075C an ideal amplifier for signal-processing and digitizing systems. Ordering Information Part No. Temp. Range Package Outline # EL2075CN 0°C to +75°C 8-Pin P-DIP MDP0031 EL2075CS 0°C to +75°C 8-Lead SO MDP0027 Connection Diagrams DIP and SO Package September 26, 2001 Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. © 2001 Elantec Semiconductor, Inc. EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier Absolute Maximum Ratings (T A = 25°C) Supply Voltage (VS) θJA = 175°C/W SO-8 Operating Temperature 0°C to +75°C Junction Temperature 175°C Storage Temperature -60°C to +150°C Note: See EL2071/EL2171 for Thermal Impedance curves. ±7V Output Current Output is short-circuit protected to ground, however, maximum reliability is obtained if IOUT does not exceed 70mA. Common-Mode Input Differential Input Voltage Thermal Resistance ±VS 5V θJA = 95°C/W P-DIP Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA. Open Loop DC Electrical Characteristics VS = ±5V, RL = 100Ω, unless otherwise specified Parameter VOS Description Input Offset Voltage Test Conditions VCM = 0V Temp Min 25°C Typ Max 0.2 1 mV 2.5 mV TMIN, T MAX Unit TCVOS Average Offset Voltage Drift  All 8 IB Input Bias Current VCM = 0V All 2 6 µA IOS Input Offset Current VCM = 0V 25°C 0.1 1 µA 2 µA TMIN, T MAX µV/°C PSRR Power Supply Rejection Ratio  All 70 90 CMRR Common Mode Rejection Ratio  All 70 90 IS Supply Current—Quiescent No Load RIN (diff) RIN (Differential) Open-Loop 25°C 15 CIN (diff) CIN (Differential) Open-Loop 25°C 1 pF RIN (cm) RIN (Common-Mode) 25°C 1 MΩ CIN (cm) CIN (Common-Mode) 25°C 1 pF ROUT Output Resistance 25°C 50 mΩ CMIR Common-Mode Input Range 25°C 21 TMIN, T MAX 25°C ±3 TMIN, T MAX ±2.5 ±3.5 dB dB 25 mA 25 mA kΩ V V IOUT Output Current All 50 70 mA VOUT Output Voltage Swing No Load All ±3.5 ±4 V VOUT 100 Output Voltage Swing 100Ω All ±3 ±3.6 V VOUT 50 Output Voltage Swing 50Ω All ±2.5 ±3.4 V AVOL 100 Open-Loop Gain 100Ω 25°C 1000 2800 V/V TMIN, T MAX 800 AVOL 50 Open-Loop Gain 50Ω 25°C 800 TMIN, T MAX 600 V/V 2300 V/V V/V eN@ > 1MHz Noise Voltage 1–100MHz 25°C 2.3 nV/√Hz iN@ > 100 kHz Noise Current 100k–100MHz 25°C 3.2 pA/√Hz 1. Measured from T MIN, TMAX. 2. ±VCC = ±4.5V to 5.5V. 3. ±VIN = ±2.5V, V OUT = 0V 2 Closed Loop AC Electrical Characteristics VS = ±5V, AV = +20, Rf = 1500Ω, RL = 100Ω unless otherwise specified. Parameter SSBW Description -3dB Bandwidth (VOUT = 0.4VPP) Test Conditions AV = +10 Temp Min 25°C AV = +20 Typ Max 400 25°C 150 TMIN, TMAX 125 Unit MHz 200 MHz MHz AV = +50 25°C 40 GBWP Gain-Bandwidth Product AV = +100 25°C 2.0 GHz LSBWa -3dB Bandwidth VOUT = 2VPP  MHz LSBWb -3dB Bandwidth VOUT = 5VPP  GFPL Peaking (<50MHz) VOUT = 0.4VPP All 80 128 All 32 50 25°C 0 TMIN, TMAX GFPH Peaking (>50MHz) VOUT = 0.4VPP GFR Rolloff (<100MHz) VOUT = 0.4VPP 25°C Linear Phase Deviation (<100MHz) VOUT = 0.4VPP PM Phase Margin tr1, tf1 dB dB 0 1 dB 1 dB 0.1 0.5 dB 0.5 dB 1.8 ° TMIN, TMAX LPD MHz 0.5 0.5 TMIN, TMAX 25°C MHz All 1 AV = +10 25°C 60 ° Rise Time, Fall Time 0.4V Step, AV = +10 25°C 1.2 ns tr2, tf2 Rise Time, Fall Time 5V Step, AV = +10 25°C 6 ns ts1 Settling to 0.1% (AV = -20) 2V Step 25°C 13 ns ts2 Settling to 0.01% (AV = -20) 2V Step 25°C 25 ns OS Overshoot 2V Step, AV = +10 25°C 10 % SR Slew Rate 2V Step, AV = +10 All 800 V/µs 2nd Harmonic Distortion @ 20MHz, AV = +20 500 DISTORTION  HD2 25°C -40 TMIN, TMAX HD3 3rd Harmonic Distortion @ 20MHz, AV = +20 25°C TMIN, TMAX 1. Large-signal bandwidth calculated using LSBW = Slew Rate / (2¼ • VPEAK). 2. All distortion measurements are made with VOUT = 2VPP, RL = 100¾. 3 -65 -30 dBc -30 dBc -50 dBc -50 dBc EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier Typical Performance Curves Non-Inverting Frequency Response Inverting Frequency Response Frequency Response for Various RLs Open Loop Gain and Phase Output Voltage Swing vs Frequency Equivalent Input Noise PSRR, CMRR, and Closed-Loop RO Frequency 2nd and 3rd Harmonic Distortion vs Frequency 2-Tone, 3rd Order Intermodulation Intercept 4 Series Resistor and Resulting Bandwidth vs Capacitive Load Common-Mode Rejection Ratio vs Input Common-Mode Voltage Bias and Offset Current vs Temperature Settling Time vs Output Voltage Change Settling Time vs Closed-Loop Gain Bias and Offset Current vs Input Common-Mode Voltage Supply Current vs Temperature Offset Voltage vs Temperature AVOL, PSRR, and CMRR vs Temperature 5 EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier Small Signal Transient Response Large Signal Transient Response 6 Equivalent Circuit Burn-In Circuit All Packages Use The Same Schematic 7 EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier Applications Information Product Description choice for RF and IF applications. Furthermore, the current drive of the EL2075C remains a minimum of 50mA at low temperatures. The EL2075C is current-limited at the output, allowing it to withstand momentary shorts to ground. However, power dissipation with the output shorted can be in excess of the power-dissipation capabilities of the package. The EL2075C is a wideband monolithic operational amplifier built on a high-speed complementary bipolar process. The EL2075C uses a classical voltage-feedback topology which allows it to be used in a variety of applications requiring a noise gain ≥10 where currentfeedback amplifiers are not appropriate because of restrictions placed upon the feedback element used with the amplifier. The conventional topology of the EL2075C allows, for example, a capacitor to be placed in the feedback path, making it an excellent choice for applications such as active filters, sample-and-holds, or integrators. Similarly, because of the ability to use diodes in the feedback network, the EL2075C is an excellent choice for applications such as log amplifiers. Capacitive Loads Although the EL2075C has been optimized to drive resistive loads as low as 50Ω, capacitive loads will decrease the amplifier's phase margin which may result in peaking, overshoot, and possible oscillation. For optimum AC performance, capacitive loads should be reduced as much as possible or isolated via a series output resistor. Coax lines can be driven, as long as they are terminated with their characteristic impedance. When properly terminated, the capacitance of coaxial cable will not add to the capacitive load seen by the amplifier. Capacitive loads greater than 10pF should be buffered with a series resistor (Rs) to isolate the load capacitance from the amplifier output. A curve of recommended Rs vs Cload has been included for reference. Values of Rs were chosen to maximize resulting bandwidth without additional peaking. The EL2075C also has excellent DC specifications: 200µV, VOS, 2µA IB, 0.1µA IOS, and 90dB of CMRR. These specifications allow the EL2075C to be used in DC-sensitive applications such as difference amplifiers. Furthermore, the current noise of the EL2075C is only 3.2 pA/√Hz, making it an excellent choice for high-sensitivity transimpedance amplifier configurations. Gain-Bandwidth Product The EL2075C has a gain-bandwidth product of 2GHz. For gains greater than 40, its closed-loop -3dB bandwidth is approximately equal to the gain-bandwidth product divided by the noise gain of the circuit. For gains less than 40, higher-order poles in the amplifier's transfer function contribute to even higher closed loop bandwidths. For example, the EL2075C has a -3dB bandwidth of 400MHz at a gain of +10, dropping to 200MHz at a gain of +20. It is important to note that the EL2075C has been designed so that this “extra” bandwidth in low-gain applications does not come at the expense of stability. As seen in the typical performance curves, the EL2075C in a gain of +10 only exhibits 1.5dB of peaking with a 100Ω load. Printed-Circuit Layout As with any high-frequency device, good PCB layout is necessary for optimum performance. Ground-plane construction is highly recommended, as is good power supply bypassing. A 1µF–10µF tantalum capacitor is recommended in parallel with a 0.01µF ceramic capacitor. All lead lengths should be as short as possible, and all bypass capacitors should be as close to the device pins as possible. Parasitic capacitances should be kept to an absolute minimum at both inputs and at the output. Resistor values should be kept under 1000Ω to 2000Ω because of the RC time constants associated with the parasitic capacitance. Metal-film and carbon resistors are both acceptable, use of wire-wound resistors is not recommended because of parasitic inductance. Similarly, capacitors should be low-inductance for best performance. If possible, solder the EL2075C directly to the PC board without a socket. Even high quality sockets Output Drive Capability The EL2075C has been optimized to drive 50Ω and 75Ω loads. It can easily drive 6VPP into a 50Ω load. This high output drive capability makes the EL2075C an ideal 8 surface-mount components (resistors, capacitors, etc.) is also recommended. add parasitic capacitance and inductance which can potentially degrade performance. Because of the degradation of AC performance due to parasitics, the use of 9 EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier EL2075C Macromodel * * Connections: input * | -input * | | +Vsupply * | | | -Vsupply * | | | | output * | | | | | .subckt M2075C 3 2 7 4 6 * *Input Stage * ie 37 4 1mA r6 36 37 15 r7 38 37 15 rc1 7 30 200 rc2 7 39 200 q1 30 3 36 qn q2 39 2 38 qna ediff 33 0 39 30 1 rdiff 33 0 1 Meg * * Compensation Section * ga 0 34 33 0 2m rh 34 0 500K ch 34 0 0.4 pF rc 34 40 50 cc 40 0 0.05 pF * * Poles * ep 41 0 40 0 1 rpa 41 42 250 cpa 42 0 0.8 pF rpb 42 43 50 cpb 43 0 0.5 pF * * Output Stage * ios1 7 50 3.0mA ios2 51 4 3.0mA q3 4 43 50 qp q4 7 43 51 qn q5 7 50 52 qn q6 4 51 53 qp ros1 52 6 2 ros2 6 53 2 * * Power Supply Current * ips 7 4 11.4mA * * Models * .model qna npn(is800e-18 bf170 tf0.2ns) .model qn npn(is810e-18 bf200 tf0.2ns) .model qp pnp(is800e-18 bf200 tf0.2ns) .ends 10 EL2075C EL2075C 2GHz GBWP Gain-of-10 Stable Operational Amplifier General Disclaimer Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. September 26, 2001 WARNING - Life Support Policy Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages. Elantec Semiconductor, Inc. 675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: (408) 945-9305 European Office: +44-118-977-6020 Japan Technical Center: +81-45-682-5820 11 Printed in U.S.A.