EL2227C EL2227C Dual Very Low Noise Amplifier Features General Description • Voltage noise of only 1.9nV/√Hz • Current noise of only 1.2pA/√Hz • Bandwidth (-3dB) of 115MHz @AV = +2 • Gain-of-2 stable • Just 4.8mA per amplifier • 8-pin MSOP package • ±2.5V to ±12V operation The EL2227C is a dual, low-noise amplifier, ideally suited to line receiving applications in ADSL and HDSLII designs. With low noise specification of just 1.9nV/√Hz and 1.2pA/√Hz, the EL2227C is perfect for the detection of very low amplitude signals. Applications The EL2227C is available in a space-saving 8-pin MSOP package as well as the industry-standard 8-pin SO. It can operate over the -40°C to +85°C temperature range. • • • • • • • ADSL receivers HDSLII receivers Ultrasound input amplifiers Wideband instrumentation Communications equipment AGC & PLL active filters Wideband sensors The EL2227C features a -3dB bandwidth of 115MHz and is gain-of-2 stable. The EL2227C also affords minimal power dissipation with a supply current of just 4.8mA per amplifier. The amplifier can be powered from supplies ranging from ±2.5V to ±12V. Ordering Information Package Tape & Reel Outline # EL2227CY Part No. 8-Pin MSOP - MDP0043 EL2227CY-T13 8-Pin MSOP 13” MDP0043 EL2227CY-T7 8-Pin MSOP 7” MDP0043 EL2227CS 8-Pin SO - MDP0027 EL2227CS-T13 8-Pin SO 13” MDP0027 EL2227CS-T7 8-Pin SO 7” MDP0027 Connection Diagram VOUTA 1 VINA- 2 VINA+ 3 VS- 4 8 VS+ 7 VOUTB + + 6 VINB5 VINB+ Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. © 2001 Elantec Semiconductor, Inc. August 3, 2001 EL2227C (8-Pin SO and 8-Pin MSOP) EL2227C EL2227C Dual Very Low Noise Amplifier Absolute Maximum Ratings (T A = 25°C) Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied Supply Voltage between VS+ and VS28V Input Voltage VS- - 0.3V, VS +0.3V Maximum Continuous Output Current 40mA Maximum Die Temperature Storage Temperature Operating Temperature Power Dissipation ESD Voltage 150°C -65°C to +150°C -40°C to +85°C See Curves 2kV Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA. Electrical Characteristics VS+ = +12V, VS - = -12V, RL = 500Ω and CL = 3pF to 0V, RF = RG = 620Ω, and TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max 3 Unit Input Characteristics VOS Input Offset Voltage VCM = 0V -0.2 TCVOS Average Offset Voltage Drift  -0.6 IB Input Bias Current VCM = 0V RIN Input Impedance CIN Input Capacitance CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -11.8V to 10.4V 60 AVOL Open-Loop Gain -5V ≤ VOUT ≤ 5V 70 87 dB en Voltage Noise f = 100kHz 1.9 nV/√Hz in Current Noise f = 100kHz 1.2 pA/√Hz RL = 500Ω -10.4 -10 V RL = 250Ω -9.8 -9 V -9 mV µV/°C -3.4 µA 7.3 MΩ 1.6 -11.8 pF +10.4 94 V dB Output Characteristics VOL VOH ISC Output Swing Low Output Swing High Short Circuit Current RL = 500Ω 10 10.4 RL = 250Ω 9.5 10 V V RL = 10Ω 140 180 mA 65 Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±12V IS Supply Current (Per Amplifier) No Load VS Operating Range 95 4.8 ±2.5 dB 6.5 mA ±12 V Dynamic Performance SR Slew Rate ±2.5V square wave, measured 25%-75% tS Settling to 0.1% (AV = +2) (AV = +2), VO = ±1V 65 ns BW -3dB Bandwidth RF = 358Ω 115 MHz HD2 2nd Harmonic Distortion f = 1MHz, VO = 2VP-P, RL = 500Ω, RF = 358Ω 93 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, RF = 358Ω 83 dBc f = 1MHz, VO = 2VP-P, RL = 500Ω, RF = 358Ω 94 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, RF = 358Ω 76 dBc HD3 3rd Harmonic Distortion 2 40 50 V/µS Electrical Characteristics VS+= +5V, VS - = -5V, RL = 500Ω and CL = 3pF to 0V, RF = 620Ω & TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max 3 Unit Input Characteristics VOS Input Offset Voltage VCM = 0V 0.2 TCVOS Average Offset Voltage Drift  -0.6 IB Input Bias Current VCM = 0V RIN Input Impedance CIN Input Capacitance CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -4.8V to 3.4V 60 AVOL Open-Loop Gain -5V ≤ VOUT ≤ 5V 70 84 dB en Voltage Noise f = 100kHz 1.9 nV/√Hz in Current Noise f = 100kHz 1.2 pA/√Hz RL = 500Ω -3.8 -3.5 V RL = 250Ω -3.7 -3.5 V -9 mV µV/°C -3.7 µA 7.3 MΩ 1.6 -4.8 pF 3.4 97 V dB Output Characteristics VOL VOH ISC Output Swing Low Output Swing High Short Circuit Current RL = 500Ω 3.5 3.7 RL = 250Ω 3.5 3.6 V V RL = 10Ω 60 100 mA 65 Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±12V IS Supply Current (Per Amplifier) No Load VS Operating Range 95 4.5 ±2.5 dB 5.5 mA ±12 V Dynamic Performance SR Slew Rate ±2.5V square wave, measured 25%-75% tS Settling to 0.1% (AV = +2) (AV = +2), VO = ±1V 77 ns BW -3dB Bandwidth RF = 358Ω 90 MHz HD2 2nd Harmonic Distortion f = 1MHz, VO = 2VP-P, RL = 500Ω, RF = 358Ω 98 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, RF = 358Ω 90 dBc f = 1MHz, VO = 2VP-P, RL = 500Ω, RF = 358Ω 94 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, RF = 358Ω 79 dBc HD3 3rd Harmonic Distortion 3 35 45 V/µS EL2227C EL2227C Dual Very Low Noise Amplifier Dual Very Low Noise Amplifier Typical Performance Curves Inverting Frequency Response for Various RF 4 4 3 3 2 2 RF=1kΩ 1 RF=620Ω Normalized Gain (dB) Normalized Gain (dB) Non-inverting Frequency Response for Various RF 0 -1 RF=100Ω -2 RF=350Ω -3 -4 -5 -6 1M RF=100Ω RF=350Ω 1 0 -1 RF=420Ω -2 RF=620Ω -3 -4 VS=±12V AV=+2 RL=500Ω -5 10M 100M -6 1M 200M RF=1kΩ VS=±12V AV=-1 RL=500Ω 10M Frequency (Hz) 200M Inverting Frequency Response (Gain) 4 4 3 3 2 2 1 AV=2 Normalized Gain (dB) Normalized Gain (dB) 100M Frequency (Hz) Non-inverting Frequency Response (Gain) 0 AV=10 -1 AV=5 -2 -3 -4 -5 -6 1M 100M VS=±12V RF=420Ω RL=500Ω Non-inverting Frequency Response (Phase) Inverting Frequency Response (Phase) 135 90 90 45 45 AV=5 0 Phase (°) -90 AV=10 -135 -180 -315 1M AV=-1 0 AV=2 -45 -270 200M Frequency (Hz) 135 -225 100M AV=-5 -3 -6 1M 200M 10M AV=-10 -2 -5 10M AV=-1 0 -1 -4 VS=±12V RF=350Ω RL=500Ω AV=-2 1 Frequency (Hz) Phase (°) EL2227C EL2227C -45 AV=-10 -90 AV=-2 AV=-5 -135 -180 -225 VS=±12 RF=350Ω RL=500Ω -270 10M -315 1M 100M 200M Frequency (Hz) VS=±12V RF=420Ω RL=500Ω 10M Frequency (Hz) 4 100M 200M Typical Performance Curves Non-inverting Frequency Response for Various Input Signal Levels VS=±12V RF=350Ω AV=+2 RL=500Ω 3 Normalized Gain (dB) 2 1 4 VIN=100mVPP 2 0 -1 VIN=500mVPP -2 VIN=1VPP -3 -4 -6 100k VIN=1.4VPP 0 -1 VIN=2.8VPP -2 VIN=280mVPP -3 VS=±12V RF=420Ω RL=500Ω AV=-1 -5 1M 10M -6 1M 100M 10M Frequency (Hz) Non-inverting Frequency Response for Various CL 200M Inverting Frequency Response for Various CL 4 4 CL=30pF 3 CL=30pF 3 2 CL=12pF 2 Normalized Gain (dB) Normalized Gain (dB) 100M Frequency (Hz) 5 1 0 CL=2pF -1 -2 VS=±12V RF=620Ω RL=500Ω AV=+2 -3 -4 -5 1M CL=12pF 1 0 CL=2pF -1 -2 -3 VS=±12V RF=420Ω RL=500Ω AV=-1 -4 -5 10M 100M -6 1M 200M 10M Frequency (Hz) Non-inverting Frequency Response for Various RL 4 3 2 RL=500Ω Normalized Gain (dB) 0 RL=50Ω -2 -3 -4 -5 -6 1M VO=+10V VS=±12V RF=620Ω CL=15pF AV=+2 0 -1 VO=0V -2 -3 -5 100M Frequency (Hz) VO=-5V VS=±12V RF=620Ω RL=500Ω AV=+2 -6 100k 200M 1M 10M Frequency (Hz) 5 VO=+5V 1 -4 10M VO=-10V 2 1 -1 200M Frequency Response for Various Output DC Levels 3 RL=100Ω 100M Frequency (Hz) 4 Normalized Gain (dB) VIN=20mVPP 1 -4 VIN=2VPP -5 Inverting Frequency Response for Various Input Signal Levels 3 VIN=20mVPP Normalized Gain (dB) 4 100M EL2227C EL2227C Dual Very Low Noise Amplifier Dual Very Low Noise Amplifier Typical Performance Curves 3dB Bandwidth vs Supply Voltage Peaking vs Supply Voltage 140 4 AV=+2 RF=620Ω RL=500Ω 120 3 100 AV=+2 80 AV=-2 60 40 AV=+5 AV=+2 RF=620Ω RL=500Ω AV=+2 3.5 AV=-1 Peaking (dB) 3dB Bandwidth (MHz) EL2227C EL2227C AV=-5 AV=+10 2.5 AV=-1 2 AV=+10 AV=-10 1.5 1 20 AV=+5 0.5 AV=-10 0 2 4 6 8 10 AV=-2 AV=-5 0 12 2 4 6 8 10 Supply Voltage (±V) Supply Voltage (±V) Large Signal Step Response VS=±12V Large Signal Step Response VS=±2.5V RF=620Ω AV=2 RL=500Ω RF=620Ω AV=2 RL=500Ω 0.5V/div 0.5V/div 100ns/div 100ns/div Small Signal Step Response VS=±12V Small Signal Step Response VS=±2.5V RF=620Ω AV=2 RL=500Ω RF=620Ω AV=2 RL=500Ω 20mV/div 20mV/div 100ns/div 100ns/div 6 12 Typical Performance Curves Group Delay vs Frequency 10 0.1 Differential Gain/Phase vs DC Input Voltage at 3.58MHz 8 4 2 dG (%) or dP (°) Group Delay (ns) 0.08 AV=5V 6 AV=2V 0 -2 -4 VS=±12V RF=620Ω RL=500Ω PIN=-20dBm into 50Ω -6 -8 -10 1M AV=2 RF=620Ω RL=150Ω fO=3.58MHz dP 0.04 0.02 0 dG -0.02 100M 10M 0.06 -1 -0.5 Frequency (Hz) Supply Current vs Supply Voltage 0.5 1 Closed Loop Output Impedance vs Frequency 12 100 Output Impedance (Ω) 1.2/div Supply Current (mA) 0 DC Input Voltage (V) 6 10 1 0.1 1.2/div 0 0 6 0.01 10k 12 100M PSRR CMRR 0 90 20 70 40 PSRR (dB) -CMRR (dB) 10M Frequency (Hz) 110 50 VS- 60 VS+ 30 10 10 1M 100k Supply Voltage (±V) 80 VS=±12 100 1k 10k 100k 1M 10M 100 1k 100M Frequency (Hz) 10k 100k 1M Frequency (Hz) 7 10M 100M EL2227C EL2227C Dual Very Low Noise Amplifier Dual Very Low Noise Amplifier Typical Performance Curves 1MHz 2nd and 3rd Harmonic Distortion vs Output Swing for VS=±12V AV=2 RF=620Ω RL=500Ω -50 Distortion (dBc) -50 1MHz 2nd and 3rd Harmonic Distortion vs Output Swing for VS=±2.5V AV=2 RF=358Ω RL=500Ω -60 2nd H -60 Distortion (dBc) -40 -70 3rd H -80 -70 2nd H -80 3rd H -90 -90 -100 -100 0 4 8 12 16 20 0 0.5 1 Output Swing (VPP) -60 Total Harmonic Distortion vs Frequency @ 2VPP VS=±12V -60 -90 -100 -120 RL=50 -80 THD (dBc) THD (dBc) RL=50 -90 RL=500 -100 RL=500 -110 1 10 2.5 Total Harmonic Distortion vs Frequency @ 2VPP VS=±2.5V -70 -80 2 1.5 Output Swing (VPP) -70 -110 100 -120 1000 1 10 100 1000 Frequency (kHz) Frequency (kHz) Voltage and Current Noise vs Frequency Channel to Channel Isolation vs Frequency 10 0 9 -20 8 7 A→B IN Gain (dB) Voltage Noise (nV/√Hz), Current Noise (pA/√Hz) EL2227C EL2227C 6 5 -40 B→A -60 4 3 -80 EN 2 1 10 100 1k 10k -100 100k 100k Frequency (Hz) 1M 10M Frequency (Hz) 8 100M Typical Performance Curves -3dB Bandwidth vs Temperature Supply Current vs Temperature 150 10 130 9.5 120 IS (mA) -3dB Bandwidth (MHz) 140 110 9 100 90 80 -40 -20 20 0 40 60 80 100 120 8.5 -50 140 0 50 100 150 100 150 Die Temperature (°C) Die Temperature (°C) VOS vs Temperature Input Bias Current vs Temperature 2 -2 -3 VOS (mV) IBIAS (µA) 0 -4 -2 -5 -4 -50 0 50 100 -6 -50 150 0 Die Temperature (°C) Slew Rate vs Temperature Settling Time vs Accuracy 55 160 140 53 120 Settling Time (ns) Slew Rate (V/µs) 50 Die Temperature (°C) 51 49 VS=±12V VO=5VPP 100 80 60 40 47 VS=±2.5V VO=2VPP VS=±12V VO=2VPP 20 45 -50 0 50 100 0 0.01 150 Die Temperature (°C) 0.1 Accuracy (%) 9 1 EL2227C EL2227C Dual Very Low Noise Amplifier Dual Very Low Noise Amplifier Typical Performance Curves 0.9 Package Power Dissipation vs Ambient Temp. JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board 781mW 0.8 0.7 Power Dissipation (W) EL2227C EL2227C θJ 607mW A= 0.6 0.5 θJ 0.4 0.3 SO 16 8 0° C/ W MS OP 8 06° C/W A =2 0.2 0.1 0 0 25 50 75 85 100 125 150 Ambient Temperature (°C) 10 Pin Descriptions EL2227CY 8-Pin MSOP EL2227CS 8-Pin SO Pin Name Pin Function 1 1 VOUTA Output Equivalent Circuit VS+ VOUT Circuit 1 2 2 VINA- Input VS+ VIN+ VIN- VSCircuit 2 3 3 VINA+ Input 4 5 Reference Circuit 2 4 VS- Supply 5 VINB+ Input 6 6 VINB- Input Reference Circuit 2 7 7 VOUTB Output Reference Circuit 1 8 8 VS+ Supply 11 EL2227C EL2227C Dual Very Low Noise Amplifier EL2227C EL2227C Dual Very Low Noise Amplifier Applications Information Product Description choice for applications such as active filters, sampleand-holds, or integrators. The EL2227C is a dual voltage feedback operational amplifier designed especially for DMT ADSL and other applications requiring very low voltage and current noise. It also features low distortion while drawing moderately low supply current and is built on Elantec's proprietary high-speed complementary bipolar process. The EL2227C use a classical voltage-feedback topology which allows them to be used in a variety of applications where current-feedback amplifiers are not appropriate because of restrictions placed upon the feedback element used with the amplifier. The conventional topology of the EL2227C allows, for example, a capacitor to be placed in the feedback path, making it an excellent Driver Input ADSL CPE Applications The low noise EL2227C amplifier is specifically designed for the dual differential receiver amplifier function with ADSL transceiver hybrids as well as other low-noise amplifier applications. A typical ADSL CPE line interface circuit is shown in Figure 1. The EL2227C is used in receiving DMT down stream signal. With careful transceiver hybrid design and the EL2227C 1.9nV/√Hz voltage noise and 1.2pA/√Hz current noise performance, -140dBm/Hz system background noise performance can be easily achieved. ROUT + - Line + RF RG ZLINE RF ROUT + RF Receive Out + Receive Out - Receive Amplifiers + + RF Line - R RIN R RIN Figure 1. Typical Line Interface Connection 12 Disable Function θJA =Thermal Resistance of the Package The EL2227C is in the standard dual amplifier package without the enable/disable function. A simple way to implement the enable/disable function is depicted below. When disabled, both the positive and negative supply voltages are disconnected (see Figure 2 below.) PDMAX =Maximum Power Dissipation of 1 Amplifier VS =Supply Voltage IMAX =Maximum Supply Current of 1 Amplifier VOUTMAX=Maximum Output Voltage Swing of the Application +12V 1k RL =Load Resistance 1µF 10k To serve as a guide for the user, we can calculate maximum allowable supply voltages for the example of the video cable-driver below since we know that TJMAX = 150°C, TMAX = 75°C, ISMAX = 9.5mA, and the package θJAs are shown in Table 1. If we assume (for this example) that we are driving a back-terminated video cable, then the maximum average value (over duty-cycle) of VOUTMAX is 1.4V, and RL = 150Ω, giving the results seen in Table 1. 10k 1k + - 1µF 4.7µF 1k 75k Table 1 Package θJA Max PDISS @ TMAX EL2227CS SO8 160°C/W 0.406W @ 85°C EL2227CY MSOP8 206°C/W 0.315W @ 85°C Part Power Dissipation With the wide power supply range and large output drive capability of the EL2227C, it is possible to exceed the 150°C maximum junction temperatures under certain load and power-supply conditions. It is therefore important to calculate the maximum junction temperature (TJMAX) for all applications to determine if power supply voltages, load conditions, or package type need to be modified for the EL2227C to remain in the safe operating area. These parameters are related as follows: Max VS Single-Supply Operation The EL2227C have been designed to have a wide input and output voltage range. This design also makes the EL2227C an excellent choice for single-supply operation. Using a single positive supply, the lower input voltage range is within 200mV of ground (RL = 500Ω), and the lower output voltage range is within 875mV of ground. Upper input voltage range reaches 3.6V, and output voltage range reaches 3.8V with a 5V supply and RL = 500Ω. This results in a 2.625V output swing on a single 5V supply. This wide output voltage range also allows single-supply operation with a supply voltage as high as 28V. T JMAX = T MAX + ( θ JA × PD MAXTOTAL ) where: PDMAXTOTAL is the sum of the maximum power dissipation of each amplifier in the package (PDMAX) PDMAX for each amplifier can be calculated as follows: Gain-Bandwidth Product and the -3dB Bandwidth V OUTMAX PD MAX = 2 × V S × I SMAX + ( V S – V OUTMAX ) × ---------------------------RL The EL2227C have a gain-bandwidth product of 137MHz while using only 5mA of supply current per amplifier. For gains greater than 2, their closed-loop ----3dB bandwidth is approximately equal to the gain- where: TMAX =Maximum Ambient Temperature 13 EL2227C EL2227C Dual Very Low Noise Amplifier EL2227C EL2227C Dual Very Low Noise Amplifier bandwidth product divided by the noise gain of the circuit. For gains less than 2, higher-order poles in the amplifiers' transfer function contribute to even higher closed loop bandwidths. For example, the EL2227C have a -3dB bandwidth of 115MHz at a gain of +2, dropping to 28MHz at a gain of +5. It is important to note that the EL2227C have been designed so that this “extra” bandwidth in low-gain applications does not come at the expense of stability. As seen in the typical performance curves, the EL2227C in a gain of +2 only exhibit 0.5dB of peaking with a 1000Ω load. Output Drive Capability The EL2227C have been designed to drive low impedance loads. They can easily drive 6VPP into a 500Ω load. This high output drive capability makes the EL2227C an ideal choice for RF, IF and video applications. Printed-Circuit Layout The EL2227C are well behaved, and easy to apply in most applications. However, a few simple techniques will help assure rapid, high quality results. As with any high-frequency device, good PCB layout is necessary for optimum performance. Ground-plane construction is highly recommended, as is good power supply bypassing. A 0.1µF ceramic capacitor is recommended for bypassing both supplies. Lead lengths should be as short as possible, and bypass capacitors should be as close to the device pins as possible. For good AC performance, parasitic capacitances should be kept to a minimum at both inputs and at the output. Resistor values should be kept under 5kΩ because of the RC time constants associated with the parasitic capacitance. Metal-film and carbon resistors are both acceptable, use of wire-wound resistors is not recommended because of their parasitic inductance. Similarly, capacitors should be low-inductance for best performance. 14 EL2227C EL2227C Dual Very Low Noise Amplifier General Disclaimer Specifications contained in this data sheet are in effect as of the publication date shown. Elantec Semiconductor, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec Semiconductor, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. WARNING - Life Support Policy August 3, 2001 Elantec Semiconductor, Inc. 675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: (408) 945-9305 European Office: +44-118-977-6020 Japan Technical Center: +81-45-682-5820 Elantec Semiconductor, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec Semiconductor, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec Semiconductor, Inc. Products in Life Support Systems are requested to contact Elantec Semiconductor, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec Semiconductor, Inc.’s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages. 15 Printed in U.S.A.