PGT 204 06 DFB/EA Laser Module for 10 Gb/s Applications Key Features • 1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodulator (EA) • Hermetic, 7 pin butterfly package • Single-mode fiber pigtail • 12 GHz typical bandwidth • -3 dBm output power • Multisourced footprint Applications • DWDM SDH STM-64 LH • DWDM SONET OC-192 LR Description The laser module, intended for OC-192/STM-64 DWDM applications, consists of a DFB laser with integrated absorption modulator mounted in a high frequency package which includes an isolator. Laser wavelengths are available according to the ITU-T grid. 1 PGT 204 06 7 1 10k TEC 8 TOP VIEW Figure 1. Block diagram 20.83 4.5 0.2 5.0 5.1 8.2 5.8 1.0 5.0 26.4 30.0 12.02 Pin 8 8.89 12.7 14.0 ø3.0 4xø2.6 Min. 10 Pin 1 Figure 2. Pin description 2 7.3 7x0.5 6x2.54 Pin 7 Pin Description 1. Thermistor 2. Thermistor 3. Laser DC bias (+) 4. Monitor (-) 5. Monitor (+) 6. TEC (+) 7. TEC (-) 8. EA modulation (-) PGT 204 06 Optical Characteristics Electrical and optical characteristics at recommended operating conditions, unless otherwise noted. Parameter Conditions Symbol Min Wavelength Output power Extinction ratio Dispersion penalty Side mode suppr.ratio Optical isolation ITU-T grid BOL 2.5 Vpp @ 1600 ps/nm disp. λ POut ER 1530 -3 10 SMSR 35 30 Symbol Min IOp Ith Vf 50 fc tr/tf IMon 12 Typ Max Unit 1564 nm dBm dB dB dB dB 2 Electrical Characteristics Parameter Operating current Threshold current Forward voltage Reflection, S11 Small signal modulation bandwidth Rise/Fall time Monitor current Monitor dark current Thermistor resistance TEC Voltage Current Power Conditions 0 - 5 GHz 5 – 9 GHz -3 dBe 10/90% -5 V @ 25 °C Typ 0.1 5 9.5 -2.5 -1.2 Max Unit 100 25 2 -12 -9 mA mA V dB dB GHz ps mA nA kΩ V A W 40 1 100 10.5 2.5 1.2 3 Operating Conditions Parameter Symbol Min Max Unit Operating case temperature Operating chip temperature TCase TOp 0 20 Typ 70 35 °C °C Parameter Symbol Min Max Unit Storage temperature Laser forward current Modulator voltage TStg ILD VMod -40 85 150 1 °C mA V Absolute Maximum Ratings -4 CAUTION: Stresses outside those listed in ”Absolute Maximum Ratings” may cause permanent damage to the device. 3 PGT 204 06 Handling Precautions This device may be damaged as a result of electrostatic discharge (ESD). Take proper precautions during both handling and testing. This typically includes grounded wrist wraps, workbenches and floor mats in ESD controlled areas. Semiconductor devices may be damaged by current surges, use appropriate transient protection. Quality Assurance Ericsson Microelectronics commitment to quality has been proven through a decade of semiconductor device production and has been confirmed to ISO 9001. Opto product qualification is made according to the intention of applicable Telcordia standards. Connector Options FC/PC SC (Other connectors available on request) DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM WAVELENGTH 1300 nm - 1600 nm CLASS 3B LASER Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Ericsson Microelectronics. These products are sold only according to Ericsson Microelectronics' general conditions of sale, unless otherwise confirmed in writing. Product specifications subject to change without notice. Ericsson Microelectronics AB SE-164 81 Kista, Sweden Telephone: +46 8 757 50 00 www.ericsson.com/microelectronics For local sales contacts, please refer to our website or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76 4 1522-PGT 204 06 Rev. A © Ericsson Microelectronics AB, October 2000