ERICSSON PTB20008

e
PTB 20008
10 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20008 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
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10 Watts, 935–960 MHz
Class AB Characteristics
50% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
15.0
12.5
VCC = 24 V
10.0
ICQ = 100 mA
f = 960 MHz
200
08
LOT
7.5
COD
E
5.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Package 20201
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
6.7
Adc
Total Device Dissipation at Tflange = 25°C
PD
65
Watts
0.4
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
2.7
°C/W
1
9/28/98
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PTB 20008
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 100 mA
V(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 100 mA
V(BR)CES
55
70
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 1 A
hFE
20
50
120
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA, f = 960 MHz)
Gpe
9.5
10
11.5
dB
Collector Efficiency
(VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA, f = 960 MHz)
ηC
50
—
—
%
Intermodulation Distortion
(VCC = 24 Vdc, Pout = 10 W(PEP), ICQ = 100 mA,
f1 = 959.999 MHz, f2 = 960.000 MHz)
IMD
—
-32
—
dBc
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA
f = 960 MHz—all phase angles at frequency of test)
Ψ
—
—
30:1
—
RF Specifications (100% Tested)
Characteristic
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA)
Z Source
Frequency
Z Load
Z Source
Z Load
MHz
R
jX
R
jX
935
1.5
-2.1
1.6
2.3
960
3.5
4.6
2.1
-3.8
2
e
PTB 20008
Typical Performance
Gain & Efficiency vs. Frequency
VCC = 24 V
Pout = 10 W
Gain (dB)
13
70
12
60
Efficiency (%)
11
10
50
40
Gain (dB)
9
8
920
80
Efficiency (%)
14
(as measured in a broadband circuit)
30
930
940
950
960
20
970
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20008 Uen Rev. D 09-28-98