e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 15 Watts, 420–470 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 30 25 20 200 30 LOT COD E 15 10 VCC = 24 V ICQ = 200 mA f = 470 MHz 5 0 0.0 0.5 1.0 1.5 2.0 Package 20201 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 48 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 6.0 Adc Total Device Dissipation at Tflange = 25°C PD 63 Watts 0.30 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 2.8 °C/W 1 9/28/98 e PTB 20030 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E Ib = 0 A, IC = 40 mA, RBE = 22 Ω V(BR)CER 50 65 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 40 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 0.4 A hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz) Gpe 11.0 13.0 — dB Collector Efficiency (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz) ηC 50 — — % Intermodulation Distortion (VCC = 24 Vdc, Pout = 15 W(PEP), ICQ = 200 mA, f1 = 469 MHz, f2 = 470 MHz) IMD — -28 — dBc Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz—all phase angles at frequency of test) Ψ — — 10:1 — RF Specifications (100% Tested) Characteristic Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 420 4.0 -2.2 7.2 -1.0 450 5.4 -3.9 6.8 -3.0 470 4.9 -5.7 6.6 -4.3 2 e PTB 20030 Typical Performance Gain & Efficiency vs. Frequency Gain (dB) 15 14 80 70 60 Efficiency (%) 13 50 Gain (dB) 12 VCC = 24 V ICQ = 50 mA Pout = 1.5 W 11 10 410 420 430 440 450 460 40 Efficiency (%) 16 (as measured in a broadband circuit) 30 20 470 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20030 Uen Rev. D 09-28-98