ERICSSON PTB20053

e
PTB 20053
60 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20053 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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60 Watts, 860–900 MHz
Class AB Characteristics
50% Collector Efficiency at 60 Watts
Gold Metallization
Silicon Nitride Passivated
Gain vs. Frequency
(as measured in a broadband circuit)
Gain (dB)
13
12
VCC = 25 V
11
ICQ = 200 mA
Pout = 60 W
200
53
LOT
CO
DE
10
9
8
7
850
860
870
880
890
900
910
Package 20200
Frequency (MHz)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCBO
65
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
8.0
Adc
Total Device Dissipation at Tflange = 25°C
PD
Above 25°C derate by
145
Watts
0.83
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
1.2
°C/W
1
9/28/98
e
PTB 20053
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 50 mA
V(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 50 mA
V(BR)CES
55
70
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
5.0
—
Volts
DC Current Gain
VCE = 5 V, IC = 250 mA
hFE
20
50
120
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz)
Gpe
8.0
9.5
—
dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz)
ηC
50
—
—
%
Ψ
—
—
10:1
—
RF Specifications (100% Tested)
Characteristic
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA,
f = 900 MHz—all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA)
Z Source
Frequency
Z Load
Z Source
Z Load
MHz
R
jX
R
jX
860
4.3
0.2
3.0
0.6
880
4.1
1.1
2.8
1.4
900
4.1
1.7
2.8
1.9
2
e
PTB 20053
Typical Performance
Efficiency vs. Frequency
(as measured in a broadband circuit)
80
Efficiency (%)
70
60
50
40
VCC = 25 V
30
ICQ = 200 mA
Pout = 60 W
20
850
860
870
880
890
900
910
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20053 Uen Rev. D 09-28-98