e PTB 20053 60 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20053 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 60 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride Passivated Gain vs. Frequency (as measured in a broadband circuit) Gain (dB) 13 12 VCC = 25 V 11 ICQ = 200 mA Pout = 60 W 200 53 LOT CO DE 10 9 8 7 850 860 870 880 890 900 910 Package 20200 Frequency (MHz) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 8.0 Adc Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 145 Watts 0.83 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 1.2 °C/W 1 9/28/98 e PTB 20053 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5.0 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz) Gpe 8.0 9.5 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz) ηC 50 — — % Ψ — — 10:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 860 4.3 0.2 3.0 0.6 880 4.1 1.1 2.8 1.4 900 4.1 1.7 2.8 1.9 2 e PTB 20053 Typical Performance Efficiency vs. Frequency (as measured in a broadband circuit) 80 Efficiency (%) 70 60 50 40 VCC = 25 V 30 ICQ = 200 mA Pout = 60 W 20 850 860 870 880 890 900 910 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20053 Uen Rev. D 09-28-98