e PTB 20077 0.7 Watts, 1525–1660 MHz INMARSAT RF Power Transistor Description The 20077 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 0.7 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • • 0.7 Watt, 1525–1660 MHz Class A Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power Output Power (Watts) 1.2 1.0 0.8 200 77 0.6 LO VCC = 26 V 0.4 OD E ICQ = 120 mA f = 1.66 GHz 0.2 0.0 0.00 TC 0.02 0.04 0.06 0.08 0.10 Input Power (Watts) Package 20227 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 0.5 Adc Total Device Dissipation at Tflange = 25°C PD 5.4 Watts 0.031 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 32.3 °C/W 1 9/28/98 e PTB 20077 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 60 — — Volts Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V(BR)CER 60 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4.0 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 40 — — Symbol Min Typ Max Units Gpe 10 12 — dB P-1dB 0.7 0.9 — Watts Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 0.2 W, ICQ = 120 mA, f = 1.525; 1.66 GHz) Power Output at 1 dB Compression (VCC = 25 Vdc, ICQ = 120 mA, f = 1.525; 1.66 GHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 0.7 W, ICQ = 120 mA, f = 1.66 GHz—all phase angles at frequency of test) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Gain (dB) 12 35 10 30 8 VCC = 26 V 6 ICQ = 120 mA Efficiency (%) 4 2 -10 40 25 20 15 Output Power (W) VCC = 26 V -20 IMD (dBc) 14 Intermodulation Distortion vs. Output Power Efficiency (%) Gain (dB) & Output Power (Watt) Typical Performance 10 f1 = 1559.9 MHz -30 f2 = 1666.0 MHz -40 IM3 -50 IM5 -60 0 5 1300 1350 1400 1450 1500 1550 1600 1650 1700 IM7 -70 0.0 Frequency (MHz) 0.2 0.4 0.6 0.8 Output Power (Watts-PEP) 2 4/29/98 ICQ = 120 mA 1.0 e PTB 20077 Impedance Data VCC = 25 Vdc, Pout = 0.7 W, ICQ = 120 mA Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.30 10.3 -3.1 25.9 39.8 1.40 10.0 -3.5 22.9 40.0 1.45 9.7 -3.9 21.1 38.6 1.50 9.5 -4.2 20.7 37.7 1.55 9.3 -5.9 20.0 35.5 1.60 10.0 -4.9 18.2 33.8 1.70 10.0 -4.7 17.4 31.0 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 4/29/98 Z0 = 50 Ω Specifications subject to change without notice. LF1 © 1996 Ericsson Inc. EUS/KR 1301-PTB 20077 Uen Rev. C 09-28-98