ERICSSON PTB20145

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PTB 20145
9 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20145 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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9 Watts, 915–960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 9 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
Output Power (Watts)
12
10
20
8
LO
14
TC
O
DE
5
6
4
VCC = 25V
2
ICQ = 50 mA
f = 960 MHz
0
0.00
0.25
0.50
0.75
1.00
1.25
Input Power (Watts)
Package 20208
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
55
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
2.6
Adc
Total Device Dissipation at Tflange = 25°C
PD
33
Watts
0.19
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
5.3
°C/W
1
9/28/98
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PTB 20145
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 50 mA
V(BR)CEO
24
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 50 mA
V(BR)CES
65
70
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 250 mA
V(BR)EBO
3.5
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 1 A
hFE
20
50
120
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA, f = 960 MHz)
Gpe
9
10
—
dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA, f = 960 MHz)
ηC
50
—
—
%
Ψ
—
—
30:1
—
RF Specifications (100% Tested)
Characteristic
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA,
f = 960 MHz—all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA)
Z Source
Frequency
Z Load
Z Source
Z Load
MHz
R
jX
R
jX
915
2.2
-2.5
3.4
7.1
937
2.2
-2.4
3.5
7.9
960
2.1
-2.2
3.7
8.6
2
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PTB 20145
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
11
80
10
70
9
60
8
Efficiency (%)
50
7
Vcc = 25 V
ICQ = 50 mA
40
6
POUT = 9 W
30
5
915
930
945
Efficiency (%)
Gain (dB)
Gain (dB)
20
960
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20145 Uen Rev. D 09-28-98