ERICSSON PTB20147

e
PTB 20147
2.5 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20147 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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2.5 Watts, 1.8–2.0 GHz
Class AB Characteristics
35% Collector Efficiency at 4 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
Output Power (Watts)
6
5
VCC = 26 V
4
ICQ = 40 mA
f = 2.0 GHz
20
14
7
LO
3
TC
OD
E
2
1
0
0
0.1
0.2
0.3
0.4
0.5
Package 20208
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
50
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
1.0
Adc
Total Device Dissipation at Tflange = 25°C
PD
10
Watts
0.057
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
17.5
°C/W
1
9/28/98
e
PTB 20147
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
VBE = 0 V, IC = 10 mA
V(BR)CES
50
—
—
Volts
Breakdown Voltage C to E
IB = 0 A, IC = 10 mA, RBE = 22 Ω
V(BR)CER
50
—
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
4
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 250 mA
hFE
20
40
—
—
Symbol
Min
Typ
Max
Units
Gpe
8
10
—
dB
P-1dB
2.5
4
—
Watts
ηC
20
—
—
%
Ψ
—
—
5:1
—
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 2.5 W, ICQ = 40 mA, f = 2.0 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 40 mA, f = 2.0 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 1.17 W, ICQ = 40 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 2.5 W, ICQ = 40 mA,
f = 2.0 GHz—all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 2.5 W, ICQ = 40 mA)
Z Source
Frequency
Z Load
Z Source
Z Load
GHz
R
jX
R
jX
1.8
30.0
-2.45
5.65
13.1
1.9
22.9
0.00
7.23
13.8
2.0
17.7
5.14
6.30
11.9
Z0 = 50 Ω
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20147 Uen Rev. D 09-28-98