ERICSSON PTB20157

e
PTB 20157
20 Watts, 1.35–1.85 GHz
RF Power Transistor
Description
The 20157 is an NPN common base RF power transistor intended
for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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20 Watts, 1.35–1.85 GHz
Class C Characteristics
40% Min Collector Efficiency at 20 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
30
25
2015
7
20
LOT
COD
E
15
10
VCC = 22 V
f = 1.85 GHz
5
0
0
1
2
3
4
5
6
7
Package 20209
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
50
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4
Vdc
Collector Current (continuous)
IC
6
Adc
Total Device Dissipation at Tflange = 25°C
PD
75
Watts
0.43
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
2.33
°C/W
1
9/28/98
e
PTB 20157
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IC = 50 mA, RBE = 27 Ω
V(BR)CER
50
—
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 50 mA
V(BR)CES
50
—
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
4
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 500 mA
hFE
20
50
120
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz)
Gpe
6
7
—
dB
Collector Efficiency
(VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz)
ηC
40
43
—
%
Ψ
—
—
10:1
—
RF Specifications (100% Tested)
Characteristic
Load Mismatch Tolerance
(VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz
—all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 22 Vdc, Pout = 20 W)
Z Source
Frequency
Z Load
Z Source
Z Load
GHz
R
jX
R
jX
1.350
8.2
-15.0
9.3
-15
1.400
7.7
-13.0
8.8
-15
1.450
7.4
-12.0
8.3
-14
1.500
7.3
-11.0
7.9
-14
1.550
7.2
-10.0
7.5
-13
1.600
7.3
-9.2
7.2
-13
1.650
7.4
-8.6
6.9
-13
1.700
7.6
-8.1
6.6
-12
1.750
7.9
-7.8
6.4
-12
1.800
8.1
-7.6
6.2
-11
1.850
8.4
-7.5
6.1
-11
2
e
PTB 20157
Typical Performance
Gain & Return Loss vs. Frequency
(as measured in a broadband circuit)
VCC = 22 V
Pout = 20 W
0
4
-15
-20
2
-25
0
-30
1.4
1.5
1.6
1.7
1.8
40
6
30
4
20
VCC = 22 V
f = 1.85 GHz
2
0
0
0
1.9
Frequency (GHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
10
Efficiency (%)
-10
1.3
8
-5
6
Gain (dB)
Gain (dB)
8
50
5
Return Loss (dB)
10
Gain & Efficiency vs. Power Out
10
5
10
15
20
25
30
Output Power (Watts)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20157 Uen Rev. D 09-28-98