e PTB 20157 20 Watts, 1.35–1.85 GHz RF Power Transistor Description The 20157 is an NPN common base RF power transistor intended for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 20 Watts, 1.35–1.85 GHz Class C Characteristics 40% Min Collector Efficiency at 20 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 30 25 2015 7 20 LOT COD E 15 10 VCC = 22 V f = 1.85 GHz 5 0 0 1 2 3 4 5 6 7 Package 20209 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4 Vdc Collector Current (continuous) IC 6 Adc Total Device Dissipation at Tflange = 25°C PD 75 Watts 0.43 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 2.33 °C/W 1 9/28/98 e PTB 20157 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IC = 50 mA, RBE = 27 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 500 mA hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz) Gpe 6 7 — dB Collector Efficiency (VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz) ηC 40 43 — % Ψ — — 10:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz —all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 22 Vdc, Pout = 20 W) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.350 8.2 -15.0 9.3 -15 1.400 7.7 -13.0 8.8 -15 1.450 7.4 -12.0 8.3 -14 1.500 7.3 -11.0 7.9 -14 1.550 7.2 -10.0 7.5 -13 1.600 7.3 -9.2 7.2 -13 1.650 7.4 -8.6 6.9 -13 1.700 7.6 -8.1 6.6 -12 1.750 7.9 -7.8 6.4 -12 1.800 8.1 -7.6 6.2 -11 1.850 8.4 -7.5 6.1 -11 2 e PTB 20157 Typical Performance Gain & Return Loss vs. Frequency (as measured in a broadband circuit) VCC = 22 V Pout = 20 W 0 4 -15 -20 2 -25 0 -30 1.4 1.5 1.6 1.7 1.8 40 6 30 4 20 VCC = 22 V f = 1.85 GHz 2 0 0 0 1.9 Frequency (GHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 10 Efficiency (%) -10 1.3 8 -5 6 Gain (dB) Gain (dB) 8 50 5 Return Loss (dB) 10 Gain & Efficiency vs. Power Out 10 5 10 15 20 25 30 Output Power (Watts) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20157 Uen Rev. D 09-28-98