ERICSSON PTB20167

e
PTB 20167
60 Watts, 850–960 MHz
RF Power Transistor
Description
The 20167 is an NPN, common base RF power transistor intended
for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum
output power, it is specifically designed for class C power amplifier
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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•
•
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24 Volt, 905 MHz Common Base Characteristics
- Output Power = 60 W
- Power Gain = 7.0 dB Min
- Efficiency = 60% Min
Double Input/Output Matched for Wideband
Performance
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
70
65
60
201
67
55
LO
50
TC
OD
E
45
40
VCC = 24 V
f = 905 MHz
35
30
6
7
8
9
10
11
12
Input Power (Watts)
Package 20200
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
55
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
10
Adc
Total Device Dissipation at Tflange = 25°C
PD
175
Watts
1
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
1
°C/W
1
9/28/98
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PTB 20167
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 50 mA
V(BR)CEO
30
—
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 50 mA
V(BR)CES
55
—
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 15 mA
V(BR)EBO
4.0
—
—
Volts
DC Current Gain
VCE = 5 V, IC = 2.0 A
hFE
20
—
100
—
Output Capacitance
VCB = 28 V, f = 1 MHz
Cob
—
60
—
pF
Symbol
Min
Typ
Max
Units
Common Base Power Gain
(VCC = 24 Vdc, Pout = 60 W, f = 905 MHz)
Gpb
7.0
7.9
—
dB
Collector Efficiency
(VCC = 24 Vdc, Pout = 60 W, f = 905 MHz)
ηC
60
64
—
%
Ψ
—
—
5:1
—
RF Specifications (100% Tested)
Characteristic
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 60 W,
f = 905 MHz—all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 24 Vdc, Pout = 60 W)
Z Source
Frequency
Z Load
Z Source
Z Load
MHz
R
jX
R
jX
850
5.4
-3.6
5.8
-0.7
905
5.3
-2.4
6.2
0.6
960
5.2
-1.4
6.9
1.7
2
e
PTB 20167
Typical Performance
Gain & Efficiency vs. Frequency
Gain (dB)
9
72
Gain (dB)
8
69
8
66
7
7
6
845
75
63
VCC = 24 V
Pout = 60 W
Efficiency (%)
860
875
890
905
920
935
950
Efficiency (%)
9
(as measured in a broadband circuit)
60
57
965
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20167 Uen Rev. C 09-28-98