ERICSSON PTB20191

e
PTB 20191
12 Watts, 1.78–1.92 GHz
RF Power Transistor
Description
The 20191 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12
watts (CW) minimum output power, or 15 watts (PEP) output power.
Ion implantation, nitride surface passivation and gold metallization
are used to ensure excellent device reliability. 100% lot traceability is
standard.
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•
•
•
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Class AB Characteristics
26 Volt, 1.9 GHz Characterization
- Output Power = 12 W(CW), 15 W(PEP)
Internal Input Matching
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
25
20
201
91
LOT
15
COD
E
10
VCC = 26 V
ICQ = 100 mA
f = 1.9 GHz
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Package 20226
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Collector-Base Voltage (emitter open)
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
2.8
Adc
Total Device Dissipation at Tflange = 25°C
PD
60
Watts
0.34
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
2.90
°C/W
1
9/28/98
e
PTB 20191
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 5 mA, RBE = 27 Ω
V(BR)CER
50
—
—
Volts
Breakdown Voltage C to B
IC = 5 mA
V(BR)CBO
50
—
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
4
—
—
Volts
DC Current Gain
VCE = 5 V, IC = 200 mA
hFE
20
—
100
—
Output Capacitance
VCB = 26 V, IE = 0 A, f = 1 MHx
Cob
—
7
—
pF
Symbol
Min
Typ
Max
Units
Gpe
8.0
10.0
—
dB
P-1dB
10
12
—
Watts
ηC
35
40
—
%
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 15 W(PEP), ICQ = 100 mA,
f1 = 1.899 GHz, f2 = 1.901 GHz)
IMD
-30
-32
—
dBc
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA,
f = 1.9 GHz—all phase angles at frequency of test)
Ψ
—
—
5:1
—
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz)
Output Power at 1 dB Compression
(VCC = 26 Vdc, ICQ = 100 mA, f = 1.9 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA)
Z Source
Frequency
Z Load
Z Source
Z Load
GHz
R
jX
R
jX
1.80
10.0
-4.2
2.6
0.9
1.85
9.1
-3.1
2.2
1.2
1.90
8.1
-2.0
1.6
1.4
2
5/19/98
Z0 = 50 Ω
e
PTB 20191
Typical Performance
Gain vs. Frequency
Efficiency vs. Output Power
(as measured in a broadband circuit)
60
14
50
Efficiency (%)
Gain (dB)
12
10
8
VCC = 26 V
6
ICQ = 100 mA
Pout = 12 W
4
2
1.75
1.8
1.85
1.9
30
20
VCC = 26 V
10
ICQ = 100 mA
f = 1.9 GHz
0
1.95
0
Frequency (GHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
40
4
8
12
16
20
Output Power (Watts)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20191 Uen Rev. C 09-28-98