e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics 26 Volt, 1.9 GHz Characterization - Output Power = 12 W(CW), 15 W(PEP) Internal Input Matching Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 25 20 201 91 LOT 15 COD E 10 VCC = 26 V ICQ = 100 mA f = 1.9 GHz 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Package 20226 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage (emitter open) VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 2.8 Adc Total Device Dissipation at Tflange = 25°C PD 60 Watts 0.34 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 2.90 °C/W 1 9/28/98 e PTB 20191 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 27 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to B IC = 5 mA V(BR)CBO 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 — — Volts DC Current Gain VCE = 5 V, IC = 200 mA hFE 20 — 100 — Output Capacitance VCB = 26 V, IE = 0 A, f = 1 MHx Cob — 7 — pF Symbol Min Typ Max Units Gpe 8.0 10.0 — dB P-1dB 10 12 — Watts ηC 35 40 — % Intermodulation Distortion (VCC = 26 Vdc, Pout = 15 W(PEP), ICQ = 100 mA, f1 = 1.899 GHz, f2 = 1.901 GHz) IMD -30 -32 — dBc Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz—all phase angles at frequency of test) Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz) Output Power at 1 dB Compression (VCC = 26 Vdc, ICQ = 100 mA, f = 1.9 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.80 10.0 -4.2 2.6 0.9 1.85 9.1 -3.1 2.2 1.2 1.90 8.1 -2.0 1.6 1.4 2 5/19/98 Z0 = 50 Ω e PTB 20191 Typical Performance Gain vs. Frequency Efficiency vs. Output Power (as measured in a broadband circuit) 60 14 50 Efficiency (%) Gain (dB) 12 10 8 VCC = 26 V 6 ICQ = 100 mA Pout = 12 W 4 2 1.75 1.8 1.85 1.9 30 20 VCC = 26 V 10 ICQ = 100 mA f = 1.9 GHz 0 1.95 0 Frequency (GHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 40 4 8 12 16 20 Output Power (Watts) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20191 Uen Rev. C 09-28-98