e PTB 20204 1.0 Watt, 380–500 MHz RF Power Transistor Description The 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 1.0 Watt, 380–500 MHz Class A Characteristics -40 dB Max Two-Tone IMD at 1.0 W(PEP) Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 2.0 1.6 202 04 1.2 LO 0.8 VCE = 24 V 0.4 ICQ = 340 mA f = 500 MHz 0.0 0.00 0.03 0.06 0.09 0.12 TC OD E 0.15 Package 20227 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 0.5 Adc Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 11 Watts 0.0625 W/°C Storage Temperature Range TSTG -40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 16 °C/W 1 9/28/98 e PTB 20204 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 5 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 70 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 40 — — Output Capacitance VCB = 24 V, IE = 0 A, f = 1 MHz Cobo — 4.4 — pF Symbol Min Typ Max Units Gpe 12.5 13.5 — dB Two-Tone Intermodulation Distortion (VCE = 24 Vdc, Pout = 1.0 W(PEP), ICQ = 340 mA, f1 = 500 MHz, f2 = 501 MHz) IM2 — -44 -40 dB Load Mismatch Tolerance (VCE = 24 Vdc, Pout = 2 W, ICQ = 340 mA, f = 500 MHz—all phase angles at frequency of test) Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Gain (VCE = 24 Vdc, Pout = 1.0 W, ICQ = 340 mA, f = 500 MHz) Impedance Data (data shown for fixed-tuned broadband circuit) (VCE = 24 Vdc, Pout = 1.0 W, ICQ = 340 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 400 6.0 -4.0 33.2 24.9 450 3.9 -0.6 34.0 17.3 500 3.4 2.1 30.1 12.2 Z0 = 50 Ω 2 5/14/98 e PTB 20204 Typical Performance Intermodulation Distortion vs. Power Output Two-Tone IMD (dBc) -35 -40 -45 VCE = 24 V -50 ICQ = 340 mA f1 = 500 MHz -55 f2 = 501 MHz -60 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Output Power (Watts-PEP) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTB 20204 Uen Rev. B 09-28-98