ERICSSON PTB20228

e
PTB 20228
6.5 Watts, 1.62–1.66 GHz
RF Power Transistor
Description
The 20228 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.626 to 1.661 GHz. Rated at 6
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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6.5 Watts, 1.62–1.66 GHz
Class AB Characteristics
40% Collector Efficiency at 6.5 Watts
Surface Mountable
Available in Tape and Reel
Gold Metallization
Silicon Nitride Passivated
10
80
8
64
6
48
4
32
VCC = 26 V
ICQ = 40 mA
f = 1.661 GHz
2
16
0
202
28
Efficiency (%)
Output Power (Watts)
Typical Power Out and Efficiency vs. Power In
LO
TC
OD
E
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Package 20227
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
50
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
1.0
Adc
Total Device Dissipation at Tflange = 25°C
PD
19.7
Watts
0.112
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
8.9
°C/W
1
9/28/98
e
PTB 20228
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 5 mA
V(BR)CEO
20
—
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 5 mA
V(BR)CES
50
—
—
Volts
Breakdown Voltage C to E
IB = 0 A, IC = 5 mA, RBE = 22 Ω
V(BR)CER
50
—
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE =5 mA
V(BR)EBO
4
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 250 mA
hFE
20
40
—
—
Output Capacitance
VCB = 26 V, Ie = 0, f = 1 MHz
Cob
6.1
pF
RF Specifications (100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gpe
8.5
9.5
—
dB
P-1dB
6.5
—
—
Watts
Collector Efficiency
(VCC = 26 Vdc, Pout = 6.5 W, ICQ = 40 mA,
f = 1.626 & 1.661 GHz)
ηC
40
—
—
%
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 6.5 W, ICQ = 40 mA,
f = 1.661 GHz—all phase angles at frequency of test)
Ψ
—
—
5:1
—
Gain
(VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.626 & 1.661 GHz)
Gain Compression
(VCC = 26 Vdc, ICQ = 40 mA, f = 1.661 GHz)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 6.5 W, ICQ = 40 mA)
Z Source
Frequency
Z Load
Z Source
Z Load
GHz
R
jX
R
jX
1.626
1.32
-2.29
7.02
21.19
1.640
1.27
-1.12
6.72
21.98
1.661
1.21
0.47
6.46
23.17
2
Z0 = 50 Ω
e
PTB 20228
Typical Performance
Gain vs. Frequency
12
(as measured in a broadband circuit)
Gain (dB)
11
10
9
VCC = 26 V
IC = 40 mA
Pin = 0.7 W
8
7
1.62
1.63
1.64
1.65
1.66
1.67
Frequency (GHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change
without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20228 Uen Rev. C 09-28-98