ERICSSON PTB20245

e
PTB 20245
35 Watts, 2.1–2.2 GHz
Wide-Band CDMA Power Transistor
Description
The 20245 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band.
Rated at 35 watts minimum output power for PEP applications, it is
specifically intended for operation as a final or driver stage in Wide
CDMA or TDMA systems. Ion implantation, nitride surface passivation
and gold metallization ensure excellent device reliability. 100% lot
traceability is standard.
•
35 Watts, 2.1–2.2 GHz
•
Class AB Characteristics
•
Gold Metallization
•
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
60
50
40
202
45
LOT
30
20
VCC = 26 V
10
ICQ = 100 mA
f = 2000 MHz
COD
E
0
0
2
4
6
8
10
12
Input Power (Watts)
Package 20223
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
55
Vdc
Collector-Base Voltage
VCBO
55
Vdc
Emitter-Base Voltage (collector open)
VEBO
3.5
Vdc
Collector Current (continuous)
IC
7.7
Adc
Total Device Dissipation at Tflange = 25° C
PD
200
Watts
1.2
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70° C)
RθJC
0.85
°C/W
1
9/28/98
e
PTB 20245
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
VBE = 0 V, IC = 20 mA
V(BR)CES
55
—
—
Volts
Breakdown Voltage C to E
IB = 0 A, IC = 20 mA, RBE = 22 Ω
V(BR)CER
55
—
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
4.0
—
Volts
DC Current Gain
VCE = 10 V, IC = 1.5 A
hFE
30
40
—
—
Symbol
Min
Typ
Max
Units
Gpe
7.5
8.5
—
dB
P–1dB
35.0
—
—
Watts
ηC
—
40
—
%
Ψ
—
—
5:1
—
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 10 W, ICQ = 85 mA, f = 2.2 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 85 mA, f = 2.2 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 35 W, ICQ = 85 mA, f = 2.2 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 17.5 W, ICQ = 85 mA
f = 2.2 GHz—all phase angles at frequency of test)
55
Gain (dB)
11
50
45
10
VCC = 26 V
9
8
Efficiency (%)
ICQ = 250 mA
40
35
30
Gain (dB)
7
2050
25
2100
2150
2200
20
2250
50
8
Efficiency (%)
40
6
VCC = 26 V
- 30
5
ICQ = 85 mA
Pout = 35 W
-15
20
4
2
2100
Frequency (MHz)
Return Loss (dB)
2120
2140
2160
Frequency (MHz)
2
4/3/98
60
Gain (dB)
Gain (dB)
60
Output Power (W)
Output Power & Efficiency
12
Broadband Test Fixture Performance
10
2180
-25
10
-35
0
2200
Return Loss (dB)
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
Efficiency (%)
Typical Performance
e
PTB 20245
Power Gain vs. Output Power
10
55
9
Power Gain (dB)
Output Power (Watts)
Output Power vs. Supply Voltage
60
50
45
ICQ = 85 mA
f = 2200 MHz
40
35
ICQ = 85 mA
ICQ = 43 mA
8
ICQ = 21 mA
7
VCC = 26 V
f = 2200 MHz
6
5
30
22
23
24
25
26
0
27
1
Supply Voltage (Volts)
10
100
Output Power (Watts)
Intermodulation Distortion vs. Power Output
-20
VCC = 26 V
IMD (dBc)
-25
ICQ = 85 mA
f1 = 2.199 GHz
f2 = 2.200 GHz
-30
-35
-40
5
10
15
20
25
30
35
40
Output Power (Watts-PEP)
Impedance Data
(VCC = 26 Vdc, Pout = 35 W, ICQ = 85 mA)
Z Source
Frequency
Z Load
Z Source
Z Load
GHz
R
jX
R
jX
2.05
3.09
–3.35
3.20
–2.90
2.10
3.79
–3.45
2.95
–2.50
2.15
4.38
–3.10
2.75
–2.05
2.20
4.58
–2.40
2.50
–1.50
2.25
3.98
–1.80
2.40
–1.30
3
4/3/98
Z0 = 10 Ω
e
PTB 20245
Test Circuit
* Thermally linked to RF device.
Schematic for f = 2.2 GHz
Q1
PTB 20245
NPN RF Transistor
l1, l9
Microstrip 50 Ω
l2
.1 λ 2 GHz
Microstrip 75 Ω
l3
.065 λ 2 GHz
Microstrip 16 Ω
l4
.095 λ 2 GHz
Microstrip 12.5 Ω
l5
.055 λ 2 GHz
Microstrip 9.7 Ω
l6
.055 λ 2 GHz
Microstrip 12.5 Ω
l7
.065 λ 2 GHz
Microstrip 22 Ω
C1, C6
0.1 µF
1206 Chip
C2, C7
10 µF, 35 V SMT Tantalum
C3, C4, C8, C10
20 pF
ATC-100
C5, C9
0–4 pf
Johanson Trimmer
L1
L2, L4
L3
R1
Board
Bias Parts (not shown on layout)
Q2
BCP 56
D1
BAV 99
C10, C11
0.1 pF
R2
2K
R3, R4
10 Ω
Parts Layout (not to scale)
4
5/20/98
56 nh
SMT Inductor
3 Turn #22, 0.25” O.D.
4 mm.
SMT Ferrite
22 Ω
1206 SMT Resistor
0.031 G-200 Solid Copper Bottom, AlliedSignal
SMT NPN Transistor
Diode
SMT Capacitor
Potentiometer
1206 SMT Resistor
e
Artwork (1 inch
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
PTB 20245
)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5
9/16/98
Specifications subject to change
without notice.
L3
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20245 Uen Rev. A 09-28-98