e PTB 20258 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 915–960 MHz Class AB Characteristics 50% Typ Collector Efficiency at 6 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Typical Output Power and Efficiency vs. Input Power 80 8 68 6 Efficiency 56 4 44 VCC = 25 V ICQ = 27 mA f = 960 MHz 2 Efficiency (%) Output Power (Watts) Output Power 20 25 8 LO TC OD E 32 0 20 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Input Power (Watts) Package 20208 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.7 Adc Total Device Dissipation at Tflange = 25°C PD 22 Watts 0.125 W/°C Above 25°C derate by Storage Temperature Range Tstg -40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 8 °C/W 1 7-21-98 e PTB 20258 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA V(BR)CEO 28 29 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 60 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz) Gpe 10 11 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz) ηC — 50 — % Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz—all phase angles at frequency of test) Typical Performance Gain vs. Frequency Output Power (at P-1dB) vs. Supply Voltage (as measured in a broadband circuit) 9 Output Power (Watts) 13 VCC = 25 V Gain (dB) 12 ICQ = 27 mA POUT = 6 W 11 10 9 700 ICQ = 27 mA f = 960 MHz 7 6 5 4 3 750 800 850 900 950 1000 1050 20 Frequency (MHz) 22 24 26 Supply Voltage (Volts) 2 7-21-98 8 28 e PTB 20258 Power Gain vs. Output Power Power Gain (dB) 16 ICQ = 27 mA 14 ICQ = 41 mA 12 10 ICQ = 14 mA ICQ = 7 mA 8 VCC = 25V f = 960 MHz 6 0.10 1.00 10.00 Output Power (W) Impedance Data (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA) Z0 = 50 Ω Z Source Frequency Z Source Z Load Z Load MHz R jX R jX 1000.00 3.02 -1.05 88.10 12.00 980.00 3.10 -1.22 9.04 13.00 960.00 3.19 -1.35 9.06 14.10 950.00 3.29 -1.55 9.20 14.36 915.00 3.79 -1.95 9.50 15.98 900.00 3.60 -2.06 10.10 16.83 850.00 3.87 -2.04 11.67 17.20 800.00 3.90 -2.66 12.60 17.80 750.00 4.15 -3.00 13.80 18.87 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. L1 © 1998 Ericsson Inc. EUS/KR 1301-PTB 20258 Rev. A 07-21-98